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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 450 400 10 15 5 UNIT V V V A A W ae ae Emitter-base voltage Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3725 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 0.8 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 |I A IEBO Emitter cut-off current hFE Switching times IN DC current gain VEB=10V; IC=0 ton Turn-on time ANG CH MIC E SE IC=6A ; VCE=5V IC=6A; IB1=2A IB2=-4A; RL=15| DUC ON 10 TOR 100 |I 1.0 A |I s ts Storage time 2.5 |I s tf Fall time 0.5 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3725 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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