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| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION *Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz *High Gain S21e2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS *Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 150 mA PC Collector Power Dissipation @TC=25 0.6 W TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2408 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.5 A IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.5 A hFE DC Current Gain IC= 50mA ; VCE= 10V 30 200 fT Current-Gain--Bandwidth Product IC= 50mA ; VCE= 10V 3.5 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.25 2.0 pF S21e2 Insertion Power Gain IC= 50mA ; VCE= 10V; f= 200MHz; RG = 50 IC= 30mA ; VCE= 10V; f= 200MHz; RG = 50 18 21 dB NF Noise Figure 2.4 4.0 dB isc Websitewww.iscsemi.cn 2 |
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