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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB434 DESCRIPTION With TO-220 package Complement to type 2SD234 APPLICATIONS For low frequency power amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Junction temperature Storage temperature SEM GE Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -60 -50 -6 -3 1.5 UNIT V V V A Open collector PC Collector power dissipation 25 150 -55~150 ae ae W Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage CONDITIONS IC=-5mA ,IB=0 MIN -50 TYP. SYMBOL V(BR)CEO 2SB434 MAX UNIT V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.2 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 |I A IEBO Emitter cut-off current hFE DC current gain VEB=-4V; IC=0 IC=-0.5A ; VCE=-1V COB Output capacitance fT Transition frequency hFE Classifications R 40-80 O 70-140 HAN INC Y 120-240 SEM GE IE=0 ; VCB=-10V,f=1MHz OND IC 40 TOR UC 240 90 3 -10 |I A pF IC=-0.5A ; VCE=-10V MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB434 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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