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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base DESCRIPTION Collector Emitter PARAMETER Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base OND IC TOR UC VALUE -110 -100 -6 -5 -8 CONDITIONS UNIT V V V A A Open emitter Open collector TC=25ae PC Collector dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 25 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1227 SYMBOL MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -110 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE= -100 V VCEsat Collector-emitter saturation voltage IC=-2.5A ; IB=-5mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-2.5A ; IB=-5mA -2.0 V ICBO Collector cut-off current VCB=-80V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain fT Switching times Transition frequency ANG CH IC=-2.5A ; VCE=-3V 1500 4000 IC=-2.5A ; VCE=-5V ton Turn-on time tstg Storage time IN EMIC ES DUC ON 20 TOR MHz 0.7 |I s IC=500IB1=-500IB2=-2A VCC=-50V ,RL=25| 1.3 |I s tf Fall time 1.5 |I s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1227 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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