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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION *With TO-3 package *Wide area of safe operation *Complement to type 2SC1667 APPLICATIONS *For radio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=75 Open emitter Open base Open collector CONDITIONS VALUE -90 -90 -5 -4 50 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-25mA; IB=0 IC=-1mA; IE=0 IE=-1mA ; IC=0 IC=-3A; IB=-0.3A VCB=-90V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IE=0; VCB=-10V;f=1MHz IC=-1A ; VCE=-10V 40 200 10 MIN -90 -90 -5 TYP. 2SA837 MAX UNIT V V V -1.5 -0.1 -0.1 200 V mA mA pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA837 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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