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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= -180V(Min) *Good Linearity of hFE *Complement to Type 2SC2922 APPLICATIONS *Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 -5 A PC 200 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1216 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -2.0 V ICBO Collector Cutoff Current VCB= -180V; IE= 0 -100 A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 A hFE DC Current Gain IC= -8A; VCE= -4V 30 180 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 500 pF fT Current-Gain--Bandwidth Product IE= 2A; VCE= -12V 40 MHz Switching times ton Turn-on Time IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V 0.3 s tstg Storage Time 0.7 s tf Fall Time 0.2 s hFE Classifications O 30-60 Y 50-100 P 70-140 G 90-180 isc Websitewww.iscsemi.cn 2 |
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