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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN 1 2 3 Base Collector DESCRIPTION MJE12007 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg Emitter PARAMETER CHA IN Collector-base voltage E SEM NG Open emitter Open base OND IC TOR UC VALUE 1500 750 9 2.5 5 UNIT V V V A A W ae ae CONDITIONS Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature Open collector TC=25ae 80 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA; IB=0 IC=1A ;IB=0.5A IC=2A ;IB=1A IC=1A ;IB=0.5A IC=2A ;IB=1A VCEV=RatedValue; VBE(off)=-1.5V TC=100ae VEB=9V; IC=0 IC=1A ; VCE=5V IC=2A ; VCE=5V 3 MIN 750 MJE12007 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.0 2.5 1.5 2.8 0.25 2.5 0.25 V V V V mA mA DC current gain CHA IN E SEM NG OND IC TOR UC 2.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE12007 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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