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| SMD Type N- and P-Channel MOSFET KI4505DY Transistors IC Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 1.8 2 1.3 Symbol VDS VGS ID 7.8 6 30 1 1.2 0.75 -1.8 2 1.3 -55 to 150 N-Channel 10 sec Steady State 30 20 6 5.2 -5 -3.6 -30 1 1.2 0.75 P-Channel 10 sec Steady State -8 8 -3.8 -3 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 50 85 30 Max 62.5 105 40 P-Channel Typ 50 85 30 Max 62.5 105 40 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI4505DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 8 V VDS = 24V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -6.4V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 VDS = -6.4V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 7.8A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -5.0A VGS = 4.5 V, ID = 6.4A VGS = -2.5 V, ID = -4.0A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 7.8A VDS = -15 V, ID = -5.0A IS = 1.8A, VGS = 0 V IS = -1.8A, VGS = 0 V N-Channel VDS = 15 V, VGS = 5V, ID = 7.8A P-Channel VDS = -4 V, VGS = -5 V, ID = -5.0A N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -4 V, RL = 4 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch P-Ch N-Ch P-Ch IF = 1.8 A, di/dt = 100 A/ s N-Ch P-Ch 20 -20 Min 0.8 Transistors IC Typ Max 1.8 1.0 100 100 1 -1 5 -5 Unit V -0.45 nA A A 0.015 0.018 0.030 0.042 0.022 0.027 0.048 0.060 18 12 0.73 -0.75 11.5 13.5 3 2.2 4 3 15 21 8 45 35 60 10 55 30 50 25 40 15 70 55 100 20 85 60 100 ns 1.1 - 1.1 20 20 nC S V Turn Off Delay Time td( off) 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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