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| SMD Type SMDType MOS Field Effect Transistor 2SJ461 SOT-23 IC MOSFET Unit: mm Can be driven by a 2.5V power source. +0.1 2.4-0.1 Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -50 7.0 0.1 0.2 200 150 -55 to +150 Unit V V A A mW Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG= 200 A ,VDS=0 Min -20 10 -100 10 -0.7 12 46 31 6 VDS=-3.0V,VGS=0,f=1MHZ 9 1.6 32 VDD=-3.0V,VGS(on)=-3.0V,ID=--20mA RL=200 ,RG=10 270 45 130 100 50 pF pF pF ns ns ns ns -0.9 -1.3 Typ Max Unit V V A A V ms VDS=-50V,VGS=0 VGS= 7.0V,VDS=0 A VGS(off) VDS=-3.0V,ID=-1 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-3.0V,ID=-10mA VGS=-2.5V,ID=-3mA VGS=-4.0V,ID=-10mA www.kexin.com.cn 1 |
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