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13020 TFS208B LC7366 3LB200C 2N7522 EMK11 H6413 124141
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  Datasheet File OCR Text:
 SMD Type
General Purpose Transistor 2SD2351
Features
High DC current gain. High emitter-base voltage. (VCBO=12V) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 12 0.15 0.2 0.2 150 -55 to +150 Unit V V V A(DC) A(Pulse)* W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=10iA IC=1mA IE=10iA VCB=50V VEB=12V Testconditons Min 60 50 12 0.3 0.3 0.3 820 250 3.5 2700 MHz pF Typ Max Unit V V V iA iA V
VCE(sat) IC/IB=50mA/5mA hFE fT Cob VCE/IC=5V/1mA VCE=5V, IE=-10mA, f=100MHz VCB=5V, IE=0A, f=1MHz
hFE Classification
Marking hFE BJV 820 1800 BJW 1200 2700
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