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SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. (VCBO=12V) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) Transistors IC 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 12 0.15 0.2 0.2 150 -55 to +150 Unit V V V A(DC) A(Pulse)* W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=10iA IC=1mA IE=10iA VCB=50V VEB=12V Testconditons Min 60 50 12 0.3 0.3 0.3 820 250 3.5 2700 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC/IB=50mA/5mA hFE fT Cob VCE/IC=5V/1mA VCE=5V, IE=-10mA, f=100MHz VCB=5V, IE=0A, f=1MHz hFE Classification Marking hFE BJV 820 1800 BJW 1200 2700 www.kexin.com.cn 1 |
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