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| SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SD1935 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Large current capacity. Low collector to emitter saturation voltage. Very small-sized package permitting sets to be made smaller and slimer. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 15 15 5 0.8 3 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 12V , IE = 0 VEB = 4V , IC = 0 VCE = 2V , IC = 50mA VCE = 2V , IC = 50mA VCB = 10V , f = 1MHz 135 200 10 10 100 0.9 15 15 5 25 200 1.2 Min Typ Max 100 100 900 MHz pF mV mV V V V V Unit nA nA VCE(sat) IC = 5mA , IB = 0.5mA VCE(sat) IC = 400mA , IB = 20mA Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage VBE(sat) IC = 400mA , IB =20mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 hFE Classification Marking Rank hFE 135 5 270 200 6 400 300 CT 7 600 450 8 900 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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