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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3PN package Respectively complement to type MJE4350/4351/4352/4353 DC current gain hFE=8(Min)@IC=16A APPLICATIONS For use in high power audio amplifier and switching regulator circuits
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
MJE4340/4341/4342/4343
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=ae )
SYMBOL
VCBO
Collector-base voltage

PARAMETER
CONDITIONS
INC
VCEO VEBO IC ICM IB PC Tj Tstg
E SEM ANG H
MJE4341 MJE4342 Open emitter MJE4343 MJE4340 MJE4341 Open base MJE4342 MJE4343 Open collector
MJE4340
OND IC
TOR UC
VALUE 100 120 140 160 100 120
UNIT
V
Collector-emitter voltage
V 140 160 7 16 20 5 V A A A W ae ae
Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature
TC=25ae
125 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE4340 IC=8A ;IB=0.8A IC=16A; IB=2.0A IC=16A; IB=2.0A IC=16A ; VCE=4V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 VCE=80V; IB=0
MJE4340/4341/4342/4343
SYMBOL
CONDITIONS
MIN 100 120
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 140 160 2.0 3.5 3.9 3.9 V V V V
ICEO
Collector cut-off current

MJE4341 MJE4342
ICEX ICBO IEBO hFE-1 hFE-2 COB fT
CHA IN
Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency
Collector cut-off current Collector cut-off current
E SEM NG
MJE4343 VEB=7V; IC=0
OND IC
TOR UC
0.75 1.0 5.0 0.75 1.0
mA
VCE=RatedVCBO; VBE=1.5V TC=150ae VCB=RatedVCB; IE=0
mA mA mA
IC=8A ; VCE=2V IC=16A ; VCE=4V IE=0 ; VCB=10V;f=0.1MHz IC=-1A ; VCE=20V;f=0.5MHz
15 8 800 1.0 pF MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE4340/4341/4342/4343

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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