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| 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices General Description The Supertex 2N6660 and 2N6661 are enhancementmode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device 2N6660 2N6661 Package TO-39 TO-39 BVDSS/BVDGS (V) 60 90 RDS(ON) (max) () 3.0 4.0 ID(ON) (min) (A) 1.5 1.5 Absolute Maximum Ratings Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS 20V -55C to +150C +300C Pin Configuration Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note 1. Distance of 1.6mm from case for 10 seconds. DGS TO-39 Case: DRAIN 2N6660/2N6661 Electrical Characteristics (T Symbol Parameter C = 25C unless otherwise specified) Min Typ Max Units Conditions BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD trr Drain-to-source breakdown voltage Gate threshold voltage 2N6660 2N6661 60 90 0.8 - -3.8 1.2 350 2.0 -5.5 100 10 500 5.0 3.0 4.0 50 40 10 10 10 - V V mV/ C nA A A mmho pF O VGS = 0V, ID = 10A VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC VGS = 10V, VDS = 10V VGS = 5.0V, ID = 0.3A VGS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VDS = 25V, ID = 0.5A VGS = 0V, VDS = 24V, f = 1.0MHz VDD = 25V, ID = 1.0A, RGEN = 25 VGS = 0V, ISD = 1.0A VGS = 0V, ISD = 1.0A VGS(th) change with temperature Gate body leakage current Zero gate voltage drain current ON-state drain current All Static drain-to-source ON-state resistance Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON time Turn-OFF time Diode forward voltage drop Reverse recovery time 2N6660 2N6661 1.5 170 - ns V ns Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Thermal Characteristics Device 2N6660 2N6661 Package TO-39 TO-39 ID (continuous)* (mA) 410 350 ID (pulsed) (A) 3.0 3.0 Power Dissipation @TC = 25OC (W) 6.25 6.25 jc ( C/W) O ja ( C/W) O IDR* (mA) 410 350 IDRM (A) 3.0 3.0 20 20 125 125 Notes: * ID (continuous) is limited by max rated TJ. Switching Waveforms and Test Circuit 10V VDD RL OUTPUT 90% INPUT 0V 10% t(ON) PULSE GENERATOR t(OFF) tr td(OFF) tF RGEN td(ON) VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 2 2N6660/2N6661 TO-39 Package Outline 0.360 0.010 DIA (9.144 0.254) 0.325 0.010 DIA (8.255 0.254) 0.250 0.010 (6.350 0.254) 0.050 MAX (1.270) 0.500 MIN (12.700) 0.018 0.002 (0.4572 0.0508) 0.200 TYP (5.080) 90 NOM 0.100 (2.540) 0.100 (2.540) 0.035 0.005 (0.889 0.127) 1 2 3 0.033 0.005 (0.8382 0.127) 45 NOM 1-Source 2-Gate 3-Drain Measurement Legend = Dimensions in Inches (Dimensions in Millimeters) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-2N6660_2N6661 A042507 3 |
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