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| SUM110N04-03L New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES rDS(on) (W) ID (A) 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0035 @ VGS = 10 V 0.0053 @ VGS = 4.5 V APPLICATIONS D Automotive Applications Such As: - ABS - 12-V EPS - Motor Drives D Industrial D TO-263 G G DS S N-Channel MOSFET Top View SUM110N04-03L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 110a 102a 300 55 151 230c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 72081 S-22247--Rev. A, 25-Nov-02 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.65 Unit _C/W _ 1 SUM110N04-03L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0029 0.0042 0.0035 0.0053 0.0055 0.0066 S W 40 V 1 3 100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.35 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 110 A VGS = 0 V, VDS = 25 V, f = 1 MHz 4800 1010 560 110 17 35 15 20 50 100 25 30 75 150 ns 165 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/ms IF = 110 A, VGS = 0 V 1.1 45 1.5 0.034 110 300 1.4 70 2.3 0.081 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72081 S-22247--Rev. A, 25-Nov-02 SUM110N04-03L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 4V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 150 100 3V 50 100 TC = 125_C 50 25_C -55 _C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 240 0.008 On-Resistance vs. Drain Current r DS(on) - On-Resistance ( W ) 200 g fs - Transconductance (S) TC = -55_C 0.006 VGS = 4.5 V 0.004 VGS = 10 V 160 25_C 125_C 120 80 0.002 40 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 7000 6000 C - Capacitance (pF) 5000 4000 3000 2000 1000 Crss 0 0 8 16 24 32 40 0 0 40 Coss Ciss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 110 A 12 8 4 80 120 160 200 VDS - Drain-to-Source Voltage (V) Document Number: 72081 S-22247--Rev. A, 25-Nov-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N04-03L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 50 Drain Source Breakdown vs. Junction Temperature 48 100 V (BR)DSS (V) I Dav (a) 46 ID = 1 mA IAV (A) @ TA = 25_C 10 44 1 IAV (A) @ TA = 150_C 42 0.1 0.00001 0.0001 0.001 0.01 0.1 1 40 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72081 S-22247--Rev. A, 25-Nov-02 SUM110N04-03L New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area, Junction-to-Case 80 100 I D - Drain Current (A) I D - Drain Current (A) 60 Limited by rDS(on) 10 10 ms 100 ms 1 ms 10 ms 100 ms dc 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72081 S-22247--Rev. A, 25-Nov-02 www.vishay.com 5 This datasheet has been download from: www..com Datasheets for electronics components. |
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