View MAX19995ETX_4263497.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

19-4253; Rev 0; 12/08
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
General Description
The MAX19995 dual-channel downconverter provides up to 9dB of conversion gain, +24.8dBm input IP3, +13.3dBm 1dB input compression point, and a noise figure as low as 9dB for 1700MHz to 2200MHz diversity receiver applications. With an optimized LO frequency range of 1400MHz to 2000MHz, this mixer is ideal for low-side LO injection architectures. High-side LO injection is supported by the MAX19995A, which is pin-pin and functionally compatible with the MAX19995. In addition to offering excellent linearity and noise performance, the MAX19995 also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, a dual-input LO selectable switch, and a pair of differential IF output amplifiers. Integrated on-chip baluns allow for single-ended RF and LO inputs. The MAX19995 requires a nominal LO drive of 0dBm and a typical supply current of 297mA at VCC = 5.0V or 212mA at VCC = 3.3V. The MAX19995/MAX19995A are pin compatible with the MAX19985/MAX19985A series of 700MHz to 1000MHz mixers and pin similar with the MAX19997A/ MAX19999 series of 1800MHz to 4000MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The MAX19995 is available in a 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40C to +85C.
Features
o 1700MHz to 2200MHz RF Frequency Range o 1400MHz to 2000MHz LO Frequency Range o 1750MHz to 2700MHz LO Frequency Range (MAX19995A) o 50MHz to 500MHz IF Frequency Range o 9dB Typical Conversion Gain o 9dB Typical Noise Figure o +24.8dBm Typical Input IP3 o +13.3dBm Typical Input 1dB Compression Point o 79dBc Typical 2RF-2LO Spurious Rejection at PRF = -10dBm o Dual Channels Ideal for Diversity Receiver Applications o 49dB Typical Channel-to-Channel Isolation o Low -3dBm to +3dBm LO Drive o Integrated LO Buffer o Internal RF and LO Baluns for Single-Ended Inputs o Built-In SPDT LO Switch with 56dB LO-to-LO Isolation and 50ns Switching Time o Pin Compatible with the MAX19985/MAX19985A/ MAX19995A Series of 700MHz to 2200MHz Mixers o Pin Similar to the MAX19997A/MAX19999 Series of 1800MHz to 4000MHz Mixers o Single +5.0V or +3.3V Supply o External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode
MAX19995
Applications
UMTS/WCDMA/LTE Base Stations cdma2000(R) Base Stations DCS1800 and EDGE Base Stations PCS1900 and EDGE Base Stations PHS/PAS Base Stations Fixed Broadband Wireless Access Wireless Local Loop Private Mobile Radios Military Systems
Pin Configuration and Typical Application Circuit appear at end of data sheet. cdma2000 is a trademark of Telecommunications Industry Association.
Ordering Information
PART MAX19995ETX+ MAX19995ETX+T TEMP RANGE -40C to +85C -40C to +85C PIN-PACKAGE 36 Thin QFN-EP* 36 Thin QFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
ABSOLUTE MAXIMUM RATINGS
VCC to GND ...........................................................-0.3V to +5.5V LO1, LO2 to GND ...............................................................0.3V Any Other Pins to GND...............................-0.3V to (VCC + 0.3V) RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm RFMAIN, RFDIV Current (RF is DC shorted to GND through a balun)...............................................................50mA Continuous Power Dissipation (Note 1) ...............................8.7W JA (Notes 2, 3)..............................................................+38C/W JC (Notes 1, 3)...............................................................7.4C/W Operating Case Temperature Range (Note 4) .............................................................-40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C
Note 1: Based on junction temperature TJ = TC + (JC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: Junction temperature TJ = TA + (JA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the DCS/PCS band, VCC = +4.75V to +5.25V, TC = -40C to +85C. R1 = R4 = 806, R2 = R5 = 2.32k. Typical values are at VCC = +5.0V, TC = +25C, unless otherwise noted. All parameters are production tested.)
PARAMETER Supply Voltage Supply Current LOSEL Input High Voltage LOSEL Input Low Voltage LOSEL Input Current SYMBOL VCC ICC VIH VIL IIH and IIL -10 Total supply current, VCC = +5.0V 2 0.8 +10 CONDITIONS MIN 4.75 TYP 5 297 MAX 5.25 370 UNITS V mA V V A
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = +3.0V to +3.6V, TC = -40C to +85C, R1 = R4 = 909, R2 = R5 = 2.49k. Typical values are at VCC = +3.3V, TC = +25C, unless otherwise noted. All parameters are guaranteed by design and not production tested.)
PARAMETER Supply Voltage Supply Current LOSEL Input High Voltage LOSEL Input Low Voltage SYMBOL VCC ICC VIH VIL Total supply current, VCC = +3.3V CONDITIONS MIN 3.0 TYP 3.3 212 2 0.8 MAX 3.6 UNITS V mA V V
2
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER RF Frequency LO Frequency SYMBOL fRF fLO (Note 5) (Note 5) Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the typical application circuit, IF matching components affect the IF frequency range (Note 5) Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Note 5) LO Drive Level PLO CONDITIONS MIN 1700 1400 TYP MAX 2200 2000 UNITS MHz MHz
MAX19995
100
500
MHz
IF Frequency
f IF
50 -3
250 +3
MHz dBm
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL TC = +25C Conversion Gain GC Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fLO = 1760MHz, fRF = 1950MHz Flatness over any one of three frequency bands: fRF = 1710MHz to 1785MHz fRF = 1850MHz to 1910MHz fRF = 1920MHz to 1980MHz TCCG fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz , fIF = 190MHz, TC = -40C to +85C fRF = 1700MHz for min value Input Compression Point (Note 7) IP1dB Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fLO = 1760MHz, fIF = 190MHz, fRF = 1950MHz 9.5 CONDITIONS MIN 7 7.8 TYP 9 9 8.9 MAX 11 10.2 dB UNITS
Conversion Gain Flatness
0.1
dB
Gain Variation Over Temperature
-0.009 12.5
dB/C
13.3
dBm
_______________________________________________________________________________________
3
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 2000MHz for min value fIF = 190MHz, fLO = 1810MHz, fRF = 2000MHz for min value, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = +25C to +85C Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fLO = 1760MHz, fIF = 190MHz, fRF = 1950MHz, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone Input Intercept Variation Over Temperature TCIIP3 fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40C to +85C Single sideband, no blockers present (Note 8) fLO = 1610MHz, fIF = 190MHz, fRF = 1800MHz, TC = +25C, PLO = 0dBm, single sideband, no blockers present (Note 8) Typical Application Circuit optimized for UMTS band (R1 = R4 = 681 , R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, single sideband, no blockers present Noise Figure Temperature Coefficient TCNF Single sideband, no blockers present, TC = -40C to +85C fBLOCKER = 1900MHz, PBLOCKER = +8dBm, fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, VCC = +5.0V, TC = +25C (Notes 8, 9) MIN 20.5 TYP 23.7 MAX UNITS
21.5
23.7 dBm
Input Intercept Point
IIP3
24.8
0.0035 9 11
dBm/C
9
9.6 dB
Noise Figure
NFSSB
9.3
0.016
dB/C
Noise Figure with Blocker
NFB
19
20.5
dB
4
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS fRF = 1800MHz, fLO = 1610MHz, PRF = -10dBm (Note 8) fRF = 1800MHz, fLO = 1610MHz, PRF = -5dBm (Note 8) fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, PRF = -10dBm, VCC = +5.0V, TC = +25C (Note 8) fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, PRF = -5dBm, VCC = +5.0V, TC = +25C (Note 8) Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -10dBm Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -5dBm fRF = 1800MHz, fLO = 1610MHz, PRF = -10dBm (Note 8) fRF = 1800MHz, fLO = 1610MHz, PRF = -5dBm (Note 8) fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, PRF = -10dBm, VCC = +5.0V, TC = +25oC (Note 8) fRF = 1800MHz, fLO = 1600MHz, PLO = 0dBm, PRF = -5dBm, VCC = +5.0V, TC = +25C (Note 8) Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -10dBm Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -5dBm 77 67 MIN 54 49 TYP 79 74 MAX UNITS
MAX19995
56
79
2RF-2LO Spur Rejection
2x2
51
74
dBc
79
74
91 81
79
91
3RF-3LO Spur Rejection
3x3
69
81
dBc
86
76
_______________________________________________________________________________________
5
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at V CC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6)
PARAMETER RF Input Return Loss SYMBOL CONDITIONS LO and IF terminated into matched impedance, LO on LO port selected, RF and IF terminated into matched impedance LO Input Return Loss LO port unselected, RF and IF terminated into matched impedance IF Output Impedance ZIF Nominal differential impedance of the IC's IF outputs RF terminated into 50, LO driven by 50 source, IF transformed to 50 using external components shown in Typical Application Circuit fRF = 1700MHz for min value (Notes 8, 10) (Note 8) (Note 8) RFMAIN converted power measured at IFD_, relative to IFM_, all unused ports terminated to 50 Channel Isolation RFDIV converted power measured at IFM_, relative to IFD_, all unused ports terminated to 50 LO-to-LO Isolation LO Switching Time PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1610MHz, fLO2 = 1611MHz 50% of LOSEL to IF settled within 2 degrees 40 49 40 30 19 200 MIN TYP 21 20 dB MAX UNITS dB
IF Return Loss
12.5
dB
RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port
39 -31 -20 -40 49 -24.7 -16 -27
dB dBm dBm dBm
dB
40
56 50
dB ns
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6)
PARAMETER Conversion Gain SYMBOL GC Flatness over any one of three frequency bands: fRF = 1710MHz to 1785MHz fRF = 1850MHz to 1910MHz fRF = 1920MHz to 1980MHz TCCG TC = -40C to +85C CONDITIONS MIN TYP 8.4 MAX UNITS dB
Conversion Gain Flatness
0.1
dB
Gain Variation Over Temperature
-0.009
dB/C
6
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6)
PARAMETER Input Compression Point Input Intercept Point Input Intercept Variation Over Temperature Noise Figure Noise Figure Temperature Coefficient 2RF-2LO Spur Rejection 3RF-3LO Spur Rejection RF Input Return Loss SYMBOL IP1dB IIP3 TCIIP3 NFSSB TCNF 2x2 3x3 (Note 7) fRF1 - fRF2 = 1MHz fRF1 - fRF2 = 1MHz, TC = -40C to +85C Single sideband, no blockers present Single sideband, no blockers present, TC = -40C to +85C PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm LO on and IF terminated LO port selected, RF and IF terminated into matched impedance LO port unselected, RF and IF terminated into matched impedance RF terminated into 50, LO driven by 50 source, IF transformed to 50 using external components shown in Typical Application Circuit, fIF = 190MHz CONDITIONS MIN TYP 8.9 18.5 0.0034 9.0 0.016 73 68 70 60 21 16 dB 20 MAX UNITS dBm dBm dBm/C dB dB/C dBc dBc dB
MAX19995
LO Input Return Loss
IF Return Loss
12.5
dB
RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN converted power measured at IFD_, relative to IFM_, all unused ports terminated to 50 RFDIV converted power measured at IFM_, relative to IFD_, all unused ports terminated to 50 PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1610MHz, fLO2 = 1611MHz 50% of LOSEL to IF settled within 2 degrees
42 -40 -29 -43 49
dB dBm dBm dBm
Channel Isolation
dB 49
LO-to-LO Isolation LO Switching Time
55 50
dB ns
Note 5:
Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics. Note 6: All limits reflect losses of external components, including a 0.65dB loss at fIF = 190MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Note 7: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 source. Note 8: Guaranteed by design and characterization. Note 9: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers. Note 10: Limited production testing. _______________________________________________________________________________________ 7
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc01
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc02
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc03
11 TC = -30C 10 CONVERSION GAIN (dB)
11
11
10 CONVERSION GAIN (dB)
10 CONVERSION GAIN (dB)
9
9
9
8 TC = +85C 7 TC = +25C
8 PLO = -3dBm, 0dBm, +3dBm 7
8 VCC = 4.75V, 5.0V, 5.25V 7
6 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
6 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
6 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc04
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc05
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
MAX19995 toc06 MAX19995 toc09
25
PRF = -5dBm/TONE
25
PRF = -5dBm/TONE
25
24 INPUT IP3 (dBm)
24 INPUT IP3 (dBm)
24 INPUT IP3 (dBm)
23 TC = -30C 22 TC = +25C 21 TC = +85C
23 PLO = -3dBm 22 PLO = 0dBm
23 VCC = 5.25V 22 VCC = 4.75V
21 PLO = +3dBm
21 VCC = 5.0V 20 1700 1900 2100 2300 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) RF FREQUENCY (MHz)
20 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
20
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc07
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc08
NOISE FIGURE vs. RF FREQUENCY
12 11 NOISE FIGURE (dB) 10 9 8 7 6
12 11 NOISE FIGURE (dB) 10 9 8 7 6 1700 1900 2100 2300 TC = -30C TC = +85C
12 11 NOISE FIGURE (dB) 10 9 8 7 6
TC = +25C
PLO = -3dBm, 0dBm, +3dBm
VCC = 4.75V, 5.0V, 5.25V
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
8
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc10
MAX19995
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc11
2RF-2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm
MAX19995 toc12 MAX19995 toc18 MAX19995 toc15
90 TC = +85C 2RF-2LO RESPONSE (dBc) 80
PRF = -5dBm
90
PRF = -5dBm
90
2RF-2LO RESPONSE (dBc)
70
70
2RF-2LO RESPONSE (dBc) PLO = -3dBm PLO = +3dBm
80
80
70
60 TC = -30C 50 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) TC = +25C
60 PLO = 0dBm
60 VCC = 4.75V, 5.0V, 5.25V 50
50 1700 1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc13
3RF-3LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm
MAX19995 toc14
3RF-3LO RESPONSE vs. RF FREQUENCY
95 PRF = -5dBm
95 TC = +25C
PRF = -5dBm
95
3RF-3LO RESPONSE (dBc)
3RF-3LO RESPONSE (dBc)
3RF-3LO RESPONSE (dBc)
85
85
85
VCC = 5.25V
TC = +85C 75
75
75
PLO = -3dBm, 0dBm, +3dBm 65
65 TC = -30C 55 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
65
VCC = 4.75V VCC = 5.0V
55 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
55 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
TC = +85C 14 INPUT P1dB (dBm)
MAX19995 toc16
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc17
INPUT P1dB vs. RF FREQUENCY
15 VCC = 5.25V VCC = 5.0V
15
15
14 INPUT P1dB (dBm)
14 INPUT P1dB (dBm)
13
13
13
12 TC = +25C 11 TC = -30C
12 PLO = -3dBm, 0dBm, +3dBm 11
12 VCC = 4.75V
11
10 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
10 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
10 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc19
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc20
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc21
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 1700 1900 2100 2300 TC = -30C, +25C, +85C
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 PLO = -3dBm, 0dBm, +3dBm
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 VCC = 4.75V, 5.0V, 5.25V
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc22
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc23
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc24
-20 -25 -30 -35 -40 -45 -50 1500 1700 1900 2100
-20 -25 PLO = -3dBm, 0dBm, +3dBm -30 -35 -40 -45 -50
-20 -25 -30 -35 -40 -45 -50 VCC = 4.75V VCC = 5.25V VCC = 5.0V
LO LEAKAGE AT IF PORT (dBm)
TC = -30C, +25C, +85C
2300
LO LEAKAGE AT IF PORT (dBm)
LO LEAKAGE AT IF PORT (dBm)
1500
1700
1900
2100
2300
1500
1700
1900
2100
2300
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc25
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc26
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc27
50 TC = -30C, +25C, +85C RF-TO-IF ISOLATION (dB) 45
50 PLO = -3dBm, 0dBm, +3dBm RF-TO-IF ISOLATION (dB) 45
50 VCC = 4.75V, 5.0V, 5.25V RF-TO-IF ISOLATION (dB) 45
40
40
40
35
35
35
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
10
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc28
MAX19995
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc29
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc30
-20 LO LEAKAGE AT RF PORT (dBm)
-20 LO LEAKAGE AT RF PORT (dBm)
-20 LO LEAKAGE AT RF PORT (dBm)
-30 -40 TC = -30C, +25C, +85C
-30 -40
-30 -40
-50
-50
PLO = -3dBm, 0dBm, +3dBm
-50
VCC = 4.75V, 5.0V, 5.25V
-60
-60
-60
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
TC = -30C 2LO LEAKAGE AT RF PORT (dBm) -20 -30 TC = +25C -40 TC = +85C
MAX19995 toc31
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc32
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc33
-10
-10 2LO LEAKAGE AT RF PORT (dBm)
-10 2LO LEAKAGE AT RF PORT (dBm)
-20 -30
-20 -30
-40 PLO = -3dBm, 0dBm, +3dBm -50
-40 VCC = 4.75V, 5.0V, 5.25V -50
-50
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
TC = -30C LO SWITCH ISOLATION (dB)
MAX19995 toc34
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc35
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc36
70
70
70
LO SWITCH ISOLATION (dB)
60
TC = +25C
60
LO SWITCH ISOLATION (dB)
60
50 TC = +85C
50
PLO = -3dBm, 0dBm, +3dBm
50 VCC = 4.75V, 5.0V, 5.25V
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
______________________________________________________________________________________
11
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19995 toc37
IF PORT RETURN LOSS vs. IF FREQUENCY
MAX19995 toc38
LO SELECTED RETURN LOSS vs. LO FREQUENCY
MAX19995 toc39
0 5 RF PORT RETURN LOSS (dB) 10 PLO = -3dBm, 0dBm, +3dBm 15 20 25 30 1700 1900 2100
fIF = 190MHz
0
fLO = 1610MHz
0 LO SELECTED RETURN LOSS (dB) 5 10 15 20 25 PLO = -3dBm 30 PLO = +3dBm
IF PORT RETURN LOSS (dB)
5
VCC = 4.75V, 5.0V, 5.25V
PLO = 0dBm
10
15
20 2300 2500 50 140 230 320 410 500 RF FREQUENCY (MHz) IF FREQUENCY (MHz)
1400
1600
1800
2000
2200
2400
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS vs. LO FREQUENCY
MAX19995 toc40
SUPPLY CURRENT vs. TEMPERATURE (TC)
MAX19995 toc41
CONVERSION GAIN vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6)
MAX19995 toc42
0 LO UN SELECTED RETURN LOSS (dB) 5 10 15 20 25 30 1400 1600 1800 2000 2200 PLO = -3dBm, 0dBm, +3dBm
340 VCC = 5.25V SUPPLY CURRENT (mA) 320
11
10 CONVERSION GAIN (dB)
9
300 VCC = 5.0V 280 VCC = 4.75V 260
8 0, 3.6nH, 6.8nH, 10nH 7
6 -35 -15 5 25 45 65 85 1700 1900 2100 2300 2500 TEMPERATURE (C) RF FREQUENCY (MHz)
2400
LO FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6)
MAX19995 toc43
2RF-2LO RESPONSE vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6)
MAX19995 toc44
3RF-3LO RESPONSE vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6)
0 3.6nH 3RF-3LO RESPONSE (dBc) 85 PRF = -5dBm
MAX19995 toc45
25 PRF = -5dBm/TONE 24 INPUT IP3 (dBm) 3.6nH
90 PRF = -5dBm 0 2RF-2LO RESPONSE (dBc) 80
95
23 0 22 6.8nH 21 10nH
70
75
6.8nH 10nH
60 6.8nH, 10nH 3.6nH
65
20 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
50 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
55 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
12
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6)
10nH 55 CHANNEL ISOLATION (dB) 50 45 0 40 35 3.6nH 30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) -60 1500 1700 1900 2100 2300 LO FREQUENCY (MHz) 20 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) 0 3.6nH 6.8nH
MAX19995 toc46
MAX19995
LO LEAKAGE AT IF PORT vs. LO FREQUENCY (VARIOUS VALUES OF L3 AND L6)
MAX19995 toc47
RF-TO-IF ISOLATION vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6)
MAX19995 toc48
60
-20 0 LO LEAKAGE AT IF PORT (dBm) -30
60
RF-TO-IF ISOLATION (dB)
50
6.8nH
-40
6.8nH 3.6nH
40
-50
10nH
30 10nH
______________________________________________________________________________________
13
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
TC = -30C 10 CONVERSION GAIN (dB)
MAX19995 toc49
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc50
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc51
11
11
11
10 CONVERSION GAIN (dB)
10 CONVERSION GAIN (dB)
9
9
9
8
TC = +85C
8 PLO = -3dBm, 0dBm, +3dBm 7
8 VCC = 4.75V, 5.0V, 5.25V 7
7
TC = +25C 6 1700 1900 2100 2300 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 6 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
6
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc52
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc53
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE VCC = 5.25V
MAX19995 toc54 MAX19995 toc57
26 25 INPUT IP3 (dBm) 24 23 22 21 20 1700 1900 2100
PRF = -5dBm/TONE
26 25 INPUT IP3 (dBm) 24 23 22 21 20
PRF = -5dBm/TONE
26 25 INPUT IP3 (dBm) 24 23 22
PLO = -3dBm, 0dBm, +3dBm
VCC = 5.0V
TC = +25C
TC = +85C TC = -30C
VCC = 4.75V 21 20 1700 1900 2100 2300 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) RF FREQUENCY (MHz)
2300
2500
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc55
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc56
NOISE FIGURE vs. RF FREQUENCY
12 11 NOISE FIGURE (dB) 10 9 8 7 6 VCC = 4.75V, 5.0V, 5.25V
12 11 NOISE FIGURE (dB) 10 9 8 7 6 1700 1900 2100 2300 TC = -30C TC = +25C TC = +85C
12 11 NOISE FIGURE (dB) 10 9 8 7 6
PLO = -3dBm, 0dBm, +3dBm
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
14
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
MAX19995
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc58
2RF-2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm PLO = +3dBm
MAX19995 toc59
2RF-2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm
MAX19995 toc60
90
90
90
PRF = -5dBm TC = +85C
2RF-2LO RESPONSE (dBc)
80
2RF-2LO RESPONSE (dBc)
2RF-2LO RESPONSE (dBc)
80
80
70
70
70
60 TC = +25C 50 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) TC = -30C
60 PLO = 0dBm 50 PLO = -3dBm 1700 1900 2100 2300 2500
60 VCC = 4.75V, 5.0V, 5.25V 50 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc61
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc62
3RF-3LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm VCC = 5.0V
MAX19995 toc63
95 TC = +25C 3RF-3LO RESPONSE (dBc) 85
PRF = -5dBm
95
PRF = -5dBm
95
3RF-3LO RESPONSE (dBc)
75
75
3RF-3LO RESPONSE (dBc)
85
85
75
65 TC = -30C 55 1700 1900
TC = +85C
65
PLO = -3dBm, 0dBm, +3dBm
65 VCC = 4.75V 55
VCC = 5.25V
55 2100 2300 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) RF FREQUENCY (MHz)
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc64
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc65
INPUT P1dB vs. RF FREQUENCY
VCC = 5.25V 15 INPUT P1dB (dBm) 14 13 12 11 10 VCC = 5.0V
MAX19995 toc66
16 TC = +85C 15 INPUT P1dB (dBm) 14 13 TC = +25C 12 TC = -30C 11 10 1700 1900 2100 2300
16 15 INPUT P1dB (dBm) 14 13 PLO = -3dBm, 0dBm, +3dBm 12 11 10
16
VCC = 4.75V
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________
15
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc67
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc68
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc69
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 1700 1900 2100 2300 TC = -30C, +25C, +85C
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 PLO = -3dBm, 0dBm, +3dBm
60 55 CHANNEL ISOLATION (dB) 50 45 VCC = 4.75V, 5.0V, 5.25V 40 35 30
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc70
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc71
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
VCC = 5.25V LO LEAKAGE AT IF PORT (dBm) -25 VCC = 5.0V -30 -35 -40 -45 -50 VCC = 4.75V
MAX19995 toc72
-20 -25 -30 -35 -40 -45 -50 1500 1700 1900 2100 TC = -30C, +25C TC = +85C
-20 -25 -30 -35 -40 -45 -50 PLO = -3dBm, 0dBm, +3dBm
-20
LO LEAKAGE AT IF PORT (dBm)
LO LEAKAGE AT IF PORT (dBm)
2300
1500
1700
1900
2100
2300
1500
1700
1900
2100
2300
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc73
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc74
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc75
50 TC = -30C, +25C, +85C RF-TO-IF ISOLATION (dB) 45
50
50 VCC = 4.75V, 5.0V, 5.25V RF-TO-IF ISOLATION (dB) 45
RF-TO-IF ISOLATION (dB)
45
PLO = -3dBm, 0dBm, +3dBm
40
40
40
35
35
35
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
16
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc76
MAX19995
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc77
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc78
-20 LO LEAKAGE AT RF PORT (dBm)
-20 LO LEAKAGE AT RF PORT (dBm)
-20 LO LEAKAGE AT RF PORT (dBm)
-30
-30
-30
-40 TC = -30C, +25C, +85C
-40 PLO = -3dBm, 0dBm, +3dBm
-40 VCC = 4.75V, 5.0V, 5.25V
-50
-50
-50
-60
-60
-60
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
TC = -30C 2LO LEAKAGE AT RF PORT (dBm) -20 -30 TC = +25C -40 TC = +85C -50
MAX19995 toc79
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
PLO = 0dBm, +3dBm 2LO LEAKAGE AT RF PORT (dBm) -20 -30
MAX19995 toc80
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc81
-10
-10
-10 2LO LEAKAGE AT RF PORT (dBm)
-20 -30
-40 PLO = -3dBm -50
-40 VCC = 4.75V, 5.0V, 5.25V -50
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc82
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc83
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc84
70 TC = -30C LO SWITCH ISOLATION (dB)
70
70
LO SWITCH ISOLATION (dB)
LO SWITCH ISOLATION (dB)
60
TC = +25C
60
60
50 TC = +85C
50
50 VCC = 4.75V, 5.0V, 5.25V
PLO = -3dBm, 0dBm, +3dBm
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
______________________________________________________________________________________
17
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19995 toc85
IF PORT RETURN LOSS vs. IF FREQUENCY
fLO = 1610MHz
MAX19995 toc86
LO SELECTED RETURN LOSS vs. LO FREQUENCY
MAX19995 toc87
0 PLO = -3dBm, 0dBm, +3dBm
fIF = 190MHz
0
0 LO SELECTED RETURN LOSS (dB) 5 10 15 20 25 PLO = -3dBm 30 PLO = +3dBm
RF PORT RETURN LOSS (dB)
IF PORT RETURN LOSS (dB)
10
5
VCC = 4.75V, 5.0V, 5.25V
20
PLO = 0dBm
10
30
40
15
50 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
20 50 140 230 320 410 500 IF FREQUENCY (MHz)
1400
1600
1800
2000
2200
2400
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS vs. LO FREQUENCY
MAX19995 toc88
SUPPLY CURRENT vs. TEMPERATURE (TC)
VCC = 5.25V SUPPLY CURRENT (mA) 380
MAX19995 toc89
0 LO UN SELECTED RETURN LOSS (dB) 5 10 15 20 25 30 1400 1600 1800 2000 2200 PLO = -3dBm, 0dBm, +3dBm
400
360 VCC = 5.0V 340 VCC = 4.75V 320
2400
-35
-15
5
25
45
65
85
LO FREQUENCY (MHz)
TEMPERATURE (C)
18
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc90
MAX19995
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.3V 10 CONVERSION GAIN (dB) 9 8 7 6 5
MAX19995 toc91
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.6V VCC = 3.3V 9 8 7 VCC = 3.0V 6 5
MAX19995 toc92
11 VCC = 3.3V 10 CONVERSION GAIN (dB) 9 8 7 6 5 1700 1900 2100 2300 TC = +85C TC = +25C TC = -30C
11
11 10 CONVERSION GAIN (dB)
PLO = -3dBm, 0dBm, +3dBm
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc93
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc94
INPUT IP3 vs. RF FREQUENCY
VCC = 3.3V PRF = -5dBm/TONE
MAX19995 toc95
22 TC = +85C VCC = 3.3V PRF = -5dBm/TONE 20 INPUT IP3 (dBm)
22
VCC = 3.3V PRF = -5dBm/TONE
22 VCC = 3.6V
20 INPUT IP3 (dBm)
20 INPUT IP3 (dBm)
18
18
18
16 TC = -30C 14 TC = +25C
16
PLO = -3dBm, 0dBm, +3dBm
16 14
VCC = 3.0V VCC = 3.3V
14
12 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
12 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
12 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc96
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V
MAX19995 toc97
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc98
13 12
VCC = 3.3V TC = +85C
13 12 NOISE FIGURE (dB) 11 10 9 8 7 6
13 12 NOISE FIGURE (dB) 11 10 9 8 7 6 VCC = 3.3V, 3.6V VCC = 3.0V
NOISE FIGURE (dB)
11 10 9 8 7 6 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) TC = -30C TC = +25C
PLO = -3dBm, 0dBm, +3dBm
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________
19
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc99
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc100
2RF-2LO RESPONSE vs. RF FREQUENCY
VCC = 3.6V 2RF-2LO RESPONSE (dBc) 70 VCC = 3.3V 60 PRF = -5dBm
MAX19995 toc101 MAX19995 toc107 MAX19995 toc104
80 TC = +85C 2RF-2LO RESPONSE (dBc) 70
PRF = -5dBm VCC = 3.3V
80
PRF = -5dBm VCC = 3.3V PLO = -3dBm
80
60
2RF-2LO RESPONSE (dBc)
70
60
50
TC = -30C
50 PLO = 0dBm, +3dBm 40
50
TC = +25C
40 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
VCC = 3.0V
40 1700 1900 2100 2300 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc102
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc103
3RF-3LO RESPONSE vs. RF FREQUENCY
70 VCC = 3.6V 3RF-3LO RESPONSE (dBc) 60 PRF = -5dBm
70 TC = +85C 3RF-3LO RESPONSE (dBc) 60
PRF = -5dBm VCC = 3.3V
70
PRF = -5dBm VCC = 3.3V
3RF-3LO RESPONSE (dBc)
60
50 TC = +25C 40 TC = -30C
50 PLO = -3dBm, 0dBm, +3dBm 40
50
40 VCC = 3.0V 30
VCC = 3.3V
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
30 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc105
INPUT P1dB vs. RF FREQUENCY
VCC = 3.3V 11 INPUT P1dB (dBm) 10 9 8 PLO = -3dBm, 0dBm, +3dBm 7 6 5
MAX19995 toc106
INPUT P1dB vs. RF FREQUENCY
12 11 INPUT P1dB (dBm) 10 9 8 7 6 5 VCC = 3.0V VCC = 3.3V VCC = 3.6V
12 TC = +85C 11 INPUT P1dB (dBm)
VCC = 3.3V
12
10
9 8 TC = -30C 7 6 5 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) TC = +25C
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
20
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
VCC = 3.3V
MAX19995 toc108
MAX19995
CHANNEL ISOLATION vs. RF FREQUENCY
VCC = 3.3V 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 PLO = -3dBm, 0dBm, +3dBm
MAX19995 toc109
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc110
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 1700 1900 2100 TC = -30C, +25C, +85C
60
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 VCC = 3.0V, 3.3V, 3.6V
2300
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc111
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19995 toc112
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
VCC = 3.6V
MAX19995 toc113
-30 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -35 -40 TC = +85C -45 -50 -55 -60 1500 1700 1900 2100 TC = +25C TC = -30C
-30 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -35 -40 PLO = -3dBm -45 -50 -55 -60 PLO = 0dBm PLO = +3dBm
-30 -35 -40 -45 -50 VCC = 3.0V -55 -60 VCC = 3.3V
2300
1500
1700
1900
2100
2300
LO LEAKAGE AT IF PORT (dBm)
1500
1700
1900
2100
2300
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc114
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc115
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc116
60 55 RF-TO-IF ISOLATION (dB) 50 45 40 35 30
VCC = 3.3V
60 55 RF-TO-IF ISOLATION (dB) 50 45 40 35 30
TC = -30C TC = +25C TC = +85C
VCC = 3.3V
60 55 RF-TO-IF ISOLATION (dB) 50 45 40 35 30 VCC = 3.0V, 3.3V, 3.6V
PLO = -3dBm, 0dBm, +3dBm
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
1700
1900
2100
2300
2500
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________
21
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc117
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc118
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
VCC = 3.6V LO LEAKAGE AT RF PORT (dBm) -30
MAX19995 toc119
-20 VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -30 TC = -30C -40
-20 LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
-20
-30
-40
-40
-50 TC = +25C TC = +85C -70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-50 PLO = -3dBm, 0dBm, +3dBm
-50 VCC = 3.0V -60 VCC = 3.3V
-60
-60
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-70 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19995 toc120
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
VCC = 3.3V 2LO LEAKAGE AT RF PORT (dBm) -20 -30 PLO = -3dBm, 0dBm, +3dBm
MAX19995 toc121
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
VCC = 3.6V 2LO LEAKAGE AT RF PORT (dBm) -20 -30 VCC = 3.3V
MAX19995 toc122
-10 VCC = 3.3V 2LO LEAKAGE AT RF PORT (dBm) -20 -30 TC = -30C, +25C, +85C
-10
-10
-40
-40
-40 VCC = 3.0V
-50
-50
-50
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
-60 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc123
LO SWITCH ISOLATION vs. LO FREQUENCY
VCC = 3.3V LO SWITCH ISOLATION (dB)
MAX19995 toc124
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19995 toc125
70 VCC = 3.3V LO SWITCH ISOLATION (dB) TC = -30C 60
70
70
LO SWITCH ISOLATION (dB)
VCC = 3.0V, 3.3V, 3.6V 60
60
50 TC = +85C TC = +25C 40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
50 PLO = -3dBm, 0dBm, +3dBm 40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
50
40 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz)
22
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Operating Characteristics (continued)
(Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.)
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19995 toc126
IF PORT RETURN LOSS vs. IF FREQUENCY
MAX19995 toc86
LO SELECTED RETURN LOSS vs. LO FREQUENCY
VCC = 3.3V
MAX19995 toc128
0
LO SELECTED RETURN LOSS (dB)
fIF = 190MHz VCC = 3.3V PLO = -3dBm, 0dBm, +3dBm
0
fLO = 1610MHz
0 5 10 15 20 25 PLO = -3dBm 30 PLO = 0dBm
RF PORT RETURN LOSS (dB)
IF PORT RETURN LOSS (dB)
10
5
VCC = 3.0V, 3.3V, 3.6V
20
PLO = +3dBm
10
30
40
15
50 1700 1900 2100 2300 2500 RF FREQUENCY (MHz)
20 50 140 230 320 410 500 IF FREQUENCY (MHz)
1400
1600
1800
2000
2200
2400
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS vs. LO FREQUENCY
VCC = 3.3V LO UN SELECTED RETURN LOSS (dB) 5 10 15 20 25 30 1400 1600 1800 2000 2200 2400 LO FREQUENCY (MHz) PLO = -3dBm, 0dBm, +3dBm
MAX19995 toc129
SUPPLY CURRENT vs. TEMPERATURE (TC)
VCC = 3.6V SUPPLY CURRENT (mA) 240 VCC = 3.3V
MAX19995 toc130
0
260
220
200 VCC = 3.0V 180 -35 -15 5 25 45 65 85 TEMPERATURE (C)
______________________________________________________________________________________
23
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Pin Description
PIN 1 2 3, 5, 7, 12, 20, 22, 24, 25, 26, 34 4, 6, 10, 16, 21, 30, 36 8 9 11 13, 14 NAME RFMAIN TAPMAIN FUNCTION Main Channel RF Input. Internally matched to 50. Requires an input DC-blocking capacitor. Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033F capacitors as close as possible to the pin with the smaller value capacitor closer to the part. Ground
GND
VCC
Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as possible to the pin. Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033F capacitors as close as possible to the pin with the smaller value capacitor closer to the part. Diversity Channel RF Input. Internally matched to 50. Requires an input DC-blocking capacitor. IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier. Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating Characteristics for typical performance vs. inductor value). LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier. No Connection. Not internally connected. Local Oscillator 1 Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2. Local Oscillator 2 Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier. Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating Characteristics for typical performance vs. Inductor value). Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier. Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance.
TAPDIV RFDIV IFD_SET IFD+, IFD-
15
IND_EXTD
17 18, 28 19 23 27 29
LO_ADJ_D N.C. LO1 LOSEL LO2 LO_ADJ_M
31
IND_EXTM
32, 33 35
IFM-, IFM+ IFM_SET
--
EP
24
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Detailed Description
The MAX19995 is a dual-channel downconverter designed to provide 9dB of conversion gain, +24.8dBm input IP3, +13.3dBm 1dB input compression point, and a noise figure of 9dB. In addition to its high-linearity performance, the MAX19995 achieves a high level of component integration. The device integrates two double-balanced mixers for two-channel downconversion. Both the main and diversity channels include a balun and matching circuitry to allow 50 single-ended interfaces to the RF ports and the two LO ports. An integrated single-pole, double-throw (SPDT) switch provides 50ns switching time between the two LO inputs, with 56dB of LO-to-LO isolation and -31dBm of LO leakage at the RF port. Furthermore, the integrated LO buffers provide a high drive level to each mixer core, reducing the LO drive required at the MAX19995's inputs to a range of -3dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion, which is ideal for providing enhanced 2RF-2LO performance. Specifications are guaranteed over broad frequency ranges to allow for use in WCDMA/LTE, DCS1800/ PCS1900 GSM/EDGE, and cdma2000 base stations. The MAX19995 is specified to operate over an RF input range of 1700MHz to 2200MHz, an LO range of 1400MHz to 2000MHz, and an IF range of 50MHz to 500MHz. The external IF components set the lower frequency range. Operation beyond these ranges is possible; see the Typical Operating Characteristics for additional information. Although this device is optimized for low-side LO injection applications, it can operate in high-side LO injection modes as well. However, performance degrades as fLO continues to increase. For increased high-side LO performance, refer to the MAX19995A data sheet. required as the input is internally DC shorted to ground through the on-chip balun. The RF port input return loss is typically better than 16dB over the RF frequency range of 1700MHz to 2200MHz.
MAX19995
LO Inputs, Buffer, and Balun
The MAX19995 is optimized for a 1400MHz to 2000MHz LO frequency range. As an added feature, the MAX19995 includes an internal LO SPDT switch for use in frequency-hopping applications. The switch selects one of the two single-ended LO ports, allowing the external oscillator to settle on a particular frequency before it is switched in. LO switching time is typically 50ns, which is more than adequate for typical GSM applications. If frequency hopping is not employed, simply set the switch to either of the LO inputs. The switch is controlled by a digital input (LOSEL), where logic-high selects LO1 and logic-low selects LO2. LO1 and LO2 inputs are internally matched to 50, requiring only 39pF DC-blocking capacitors. If LOSEL is connected directly to a logic source, then voltage MUST be applied to VCC before digital logic is applied to LOSEL to avoid damaging the part. Alternatively, a 1k resistor can be placed in series at the LOSEL to limit the input current in applications where LOSEL is applied before VCC. The main and diversity channels incorporate a twostage LO buffer that allows for a wide-input power range for the LO drive. The on-chip low-loss baluns, along with LO buffers, drive the double-balanced mixers. All interfacing and matching components from the LO inputs to the IF outputs are integrated on chip.
High-Linearity Mixer
The core of the MAX19995 dual-channel downconverter consists of two double-balanced, high-performance passive mixers. Exceptional linearity is provided by the large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF-2LO rejection, and noise figure performance are typically +24.8dBm, 79dBc, and 9dB, respectively.
RF Port and Balun
The RF input ports of both the main and diversity channels are internally matched to 50, requiring no external matching components. A DC-blocking capacitor is
______________________________________________________________________________________
25
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Differential IF
The MAX19995 has an IF frequency range of 50MHz to 500MHz, where the low-end/high-end frequency depends on the frequency response of the external IF components. Note that these differential ports are ideal for providing enhanced IIP2 performance. Singleended IF applications require a 4:1 (impedance ratio) balun to transform the 200 differential IF impedance to a 50 single-ended system. After the balun, the return loss is typically 12.5dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC block is required on both IFD+/IFD- and IFM+/IFMports to keep external DC from entering the IF ports of the mixer.
IND_EXT_ Inductors
For applications requiring optimum RF-to-IF and LO-toIF isolation, connect low-ESR inductors from IND_EXT_ (pins 15 and 31) to ground. When improved isolation is not required, connect IND_EXT_ to ground using a 0 resistance. See the Typical Operating Characteristics to evaluate the isolation vs. inductor value tradeoff.
Layout Considerations
A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. The load impedance presented to the mixer must be such that any capacitance from both IF- and IF+ to ground does not exceed several picofarads. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19995 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50. No matching components are required. The RF port input return loss is typically better than 16dB over the RF frequency range of 1700MHz to 2200MHz and return loss at the LO ports are typically better than 16dB over the entire LO range. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200 (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance to a 50 single-ended output (see the Typical Application Circuit).
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and TAPMAIN/TAPDIV with the capacitors shown in the Typical Application Circuit (see Table 1 for component values). Place the TAPMAIN/TAPDIV bypass capacitors to ground within 100 mils of the pin.
Reduced-Power Mode
Each channel of the MAX19995 has two pins (LO_ADJ_, IF_SET) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 1. Larger value resistors can be used to reduce power dissipation at the expense of some performance loss. See the Typical Operating Characteristics to evaluate the biasing vs. performance tradeoff. If 1% resistors are not readily available, 5% resistors may be substituted. Significant reductions in power consumption can also be realized by operating the mixer with an optional supply voltage of +3.3V. Doing so reduces the overall power consumption by up to 62%. See the +3.3V Supply AC Electrical Characteristics and the relevant +3.3V curves in the Typical Operating Characteristics section.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19995's 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19995 is mounted be designed to conduct heat from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes.
26
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Table 1. Component Values
COMPONENT C1, C2, C7, C8, C14, C16 C3, C6 C4, C5 C9, C13, C15, C17, C18 C10, C11, C12, C19, C20, C21 L1, L2, L4, L5 L3, L6 VALUE 39pF 0.033F -- 0.01F 150pF 330nH 10nH DESCRIPTION Microwave capacitors (0402) Microwave capacitors (0603) Not used Microwave capacitors (0402) Microwave capacitors (0603) Wire-wound high-Q inductors (0805) Wire-wound high-Q inductors (0603). Smaller values can be used at the expense of some performance loss (see the Typical Operating Characteristics). 1% resistors (0402). Used for DCS/PCS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 1% resistors (0402). Used for UMTS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 1% resistors (0402). Used for VCC = +3.3V applications. 1% resistors (0402). Used for DCS/PCS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 1% resistors (0402). Used for UMTS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 1% resistors (0402). Used for VCC = +3.3V applications. 0 resistors (1206) Transformers (200:50) MAX19995 IC
806 R1, R4 681 909 2.32k R2, R5 1.5k 2.49k R3, R6 T1, T2 U1 0 4:1 --
______________________________________________________________________________________
27
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995
Typical Application Circuit
C19
T1 VCC L1 R3 C21 IF MAIN OUTPUT
L2 4:1 R1 VCC C20 L3 R2 VCC
IFM_SET
GND
IFM-
IND_EXTM
IFM+
LO_ADJ_M
C18
C17
C1 RF MAIN INPUT
+
RFMAIN TAPMAIN 1 2 3 4 5 6 7 8 9
28 N.C.
36
VCC
35
34
33
32
31
30
VCC
29
C16 27 LO2 GND GND GND LOSEL GND VCC VCC GND LO1 C14 C15 LO SELECT LO2
MAX19995
26 25 24 23 22 21
C3 VCC
C2
GND VCC
C4 VCC C5 C6
GND VCC GND C7 TAPDIV RFDIV C8
EXPOSED PAD
20 19
RF DIV INPUT
LO1
10
11
12
13
14
15
16
17 LO_ADJ_D
IND_EXTD
IFD_SET
GND
IFD+
VCC C9
R4
N.C.
IFD-
VCC
VCC
18
R5
VCC
C13 L6 C11
T2 L5 VCC R6 C12
L4 4:1
IF DIV OUTPUT
C10
28
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Pin Configuration/Functional Diagram
29 LO_ADJ_M
MAX19995
TOP VIEW
31 IND_EXTM 35 IFM_SET 33 IFM+ 32 IFM34 GND 36 VCC 30 VCC
+
RFMAIN TAPMAIN GND VCC GND VCC GND TAPDIV RFDIV 1 2 3 4 5 6 7 8 9 EXPOSED PAD 27 LO2 GND GND GND LOSEL GND VCC GND LO1
MAX19995
28 N.C.
26 25 24 23 22 21 20 19
10
11
12
13
14
15
16
17 LO_ADJ_D
IFD+
IFD_SET
IFD-
IND_EXTD
GND
THIN QFN (EXPOSED PAD) 6mm x 6mm
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
Chip Information
PROCESS: SiGe BiCMOS
N.C.
VCC
VCC
18
Package Information
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE 36 Thin QFN-EP PACKAGE CODE T3666+2 DOCUMENT NO. 21-0141
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 29
(c) 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.

▲Up To Search▲

Price & Availability of MAX19995ETX

	To Download MAX19995ETX Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .