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H7N0401LD, H7N0401LS, H7N0401LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1129-0500 (Previous: ADE-208-1527C) Rev.5.00 Apr 07, 2006
Features
* Low on-resistance RDS (on) = 3.1 m typ. * 4.5 V gate drive devices * High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1. Gate 2. Drain 3. Source 4. Drain
1 1 2 3 2 3
H7N0401LD
H7N0401LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
D
G
1
2
3
S
H7N0401LM
Rev.5.00 Apr 07, 2006 page 1 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 40 20 95 380 95 65 560 100 150 -55 to +150
Unit V V A A A A mJ W C C
IAP Note 3 EAR Pch Tch
Note 2
Note 3
Tstg
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS IDSS IGSS VGS (off) |yfs| RDS (on) Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 40 -- -- 1.5 60 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 100 3.1 4.8 9300 1300 670 160 36 40 45 270 130 85 0.95 50 Max -- 10 0.1 2.5 -- 4.2 7.0 -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V S m m pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VDS = 40 V, VGS = 0 VGS = 20 V, VDS = 0 Note 4 VDS = 10 V, ID = 1 mA ID = 47.5 A, VDS = 10 V Note 4 ID = 47.5 A, VGS = 10 V ID = 47.5 A, VGS = 4.5 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 95 A VGS = 10 V ID = 47.5 A RL = 0.63 Rg = 4.7 IF = 95 A, VGS = 0 IF = 95 A, VGS = 0 diF/dt = 100 A/s
Note 4 Note 4
Rev.5.00 Apr 07, 2006 page 2 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Main Characteristics
Power vs. Temperature Derating
160 1000 300
10 s
Maximum Safe Operation Area
Pch (W)
ID (A)
120
100 30 10 DC Operation (Tc = 25C)
10
1m
0
s
Channel Dissipation
s
80
Drain Current
40
3 Operation in this area is 1 limited by RDS(on) 0.3 Ta = 25C 0.3 1 PW = 10 ms (1shot) 3 10 30 100
0 0 50 100 150 200
0.1 0.1
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
200 10 V 6V Pulse Test 200
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
160
4.5 V
160
4V
120
120
Drain Current
80
3.5 V
80 Tc = 75C 40 25C -25C 0
40 VGS = 3 V 0 0 2 4 6 8 10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (V)
0.5 Pulse Test 0.4
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test 30 10 3 10 V 1 0.3 0.1 1 VGS = 4.5 V
0.3
0.2
ID = 50 A 20 A 10 A 0 4 8 12 16 20
0.1
0
3
10
30
100
300
1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Apr 07, 2006 page 3 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance RDS(on) (m)
10 Pulse Test 8 ID = 10, 20, 50 A
1000 300 100 30 75C 10 3 1 1 3 10 30 100 300 1000 25C Tc = -25C
6 VGS = 4.5 V 4 10, 20, 50 A 2 10 V
VDS = 10 V Pulse Test
0 -50
0
50
100
150
200
Case Temperature
Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
30000 10000 Ciss
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000
di / dt = 100 A / s 500 VGS = 0, Ta = 25C
200 100 50
Capacitance C (pF)
3000 Coss 1000
20 10 1 2 5 10 20 50 100
300 100 0 VGS = 0 f = 1 MHz 10 20 30
Crss
40
50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
VGS (V)
100 ID = 95 A 80 VGS 60 VDS VDD = 10 V 25 V 40 V
20
1000 500
16
Drain to Source Voltage
Switching Time t (ns)
VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 % Rg = 4.7
12
Gate to Source Voltage
200 100 50 td(on) 20 10 0.1 tr tf td(off)
40
8
20
0 0 40 80
VDD = 40 V 25 V 10 V 120 160
4
0 200
0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current
ID (A)
Rev.5.00 Apr 07, 2006 page 4 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
200 10 V
800 IAP = 65 A VDD = 25 V duty < 0.1 % Rg 50
IDR
160
640
Reverse Drain Current
120 5V 80
VGS = 0, -5 V
480
320
40 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
160
0
0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1
D=1 0.5
0.3
0.2
0.1
0.1
ch - c (t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C PDM
pu lse
0.05
0.03
0.02
D=
PW T
PW T
0.0
1s
1
t ho
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD
V(BR)DSS IAP VDD ID VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D.U.T
Vin 15 V
50 VDD
0
Rev.5.00 Apr 07, 2006 page 5 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Switching Time Test Circuit Waveform
Vin Monitor D.U.T. Rg RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDS = 30 V td(on)
90% tr
90% td(off) tf
Rev.5.00 Apr 07, 2006 page 6 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Rev.5.00 Apr 07, 2006 page 7 of 8
1.7
1.3 0.15
7.8 6.6
H7N0401LD, H7N0401LS, H7N0401LM
Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
2.49 0.2
10.0
(1.5)
(2.3)
0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5 0.4 0.1
0.3 5.0 + 0.5 -
0.2 0.86 + 0.1 -
2.54 0.5
Ordering Information
Part Name H7N0401LD-E H7N0401LSTL-E 500 pcs 1000 pcs Quantity Shipping Container Box (Conductive Sack) Taping
H7N0401LMTL-E 1000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Apr 07, 2006 page 8 of 8
1.7
1.3 0.15
7.8 6.6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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