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| DG411HS/412HS/413HS Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 W) with high speed (tON: 68 ns), the DG411HS family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix's high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches. FEATURES * * * * * * * 44 V Supply Max Rating 15 V Analog Signal Range On-Resistance - rDS(on): 25 Fast Switching - tON: 68 ns Ultra Low Power - PD: 0.35 W TTL, CMOS Compatible Single Supply Capability Pb-free Available RoHS* COMPLIANT BENEFITS * * * * Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing APPLICATIONS * * * * * Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411HS Dual-In-Line and SOIC D1 IN1 IN2 D2 IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 5 6 7 8 S1 VGND S4 1 2 3 4 12 11 10 9 S2 V+ VL S3 S1 VNC GND S4 16 15 14 13 Key 4 5 6 7 8 9 10 11 12 13 DG411HS QFN16 DG411HS LCC D1 IN1 NC IN2 D2 3 2 1 20 19 18 17 16 15 14 S2 V+ NC VL S3 D4 IN4 IN3 D3 Top View D4 IN4 NC IN3 D3 Top View TRUTH TABLE Logic 0 1 DG411HS ON OFF DG412HS OFF ON * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72053 S-71155-Rev. B, 11-Jun-07 www.vishay.com 1 DG411HS/412HS/413HS Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG413HS Dual-In-Line and SOIC DG413HS QFN16 D1 IN1 IN2 D2 IN2 D2 S2 V+ VL S3 D3 5 IN3 6 7 8 D4 IN4 IN3 D3 Top View S1 VGND S4 1 2 3 4 12 11 10 9 S2 V+ NC VL S3 GND S4 Key 4 5 6 7 8 D1 3 S1 V- DG413HS LCC IN1 NC 2 1 IN2 20 D2 19 18 17 16 15 14 S2 V+ NC VL S3 IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 16 15 14 13 9 D4 10 11 12 IN3 13 D3 IN4 NC Top View TRUTH TABLE Logic 0 1 SW1, SW4 OFF ON SW2, SW3 ON OFF ORDERING INFORMATION Temp Range DG411HS/412HS Package Part Number DG411HSDJ DG411HSDJ-E3 DG412HSDJ DG412HSDJ-E3 DG411HSDY DG411HSDY-E3 DG411HSDY-T1 DG411HSDY-T1-E3 DG412HSDY DG412HSDY-E3 DG412HSDY-T1 DG412HSDY-T1-E3 DG411HSDN-T1-E4 DG412HSDN-T1-E4 DG413HSDJ DG413HSDJ-E3 DG413HSDY DG413HSDY-E3 DG413HSDY-T1 DG413HSDY-T1-E3 DG413HSDN-T1-E4 16-Pin Plastic DIP - 40 to 85 C 16-Pin Narrow SOIC 16-Pin QFN 4 x 4 mm DG413HS 16-Pin Plastic DIP - 40 to 85 C 16-Pin Narrow SOIC 16-Pin QFN 4 x 4 mm www.vishay.com 2 Document Number: 72053 S-71155-Rev. B, 11-Jun-07 DG411HS/412HS/413HS Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter V+ to VGND to VVL Digital Inputsa, VS, VD Continuous Current (Any Terminal) Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature (AK, AZ Suffix) (DJ, DY, DN Suffix) 16-Pin Plastic DIPc 16-Pin Narrow Power Dissipation (Package) b Limit 44 25 (GND - 0.3) to (V+) + 0.3 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470 600 900 900 1880 Unit V mA C SOICd e 16-Pin CerDIP LCC-20 e mW 16-Pin (4 x 4 mm) QFNf Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 25 C. d. Derate 7.6 mW/C above 75 C. e. Derate 12 mW/C above 75 C. f. Derate 23.5 mW/C above 70 C. SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix - 55 to 125 C Tempb Full V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = 8.5 V V+ = 16.5 V, V- = - 16.5 V VD = 15.5 mA, VS = 15.5 V V+ = 16.5 V, V- = - 16.5 V VD = VS = 15.5 V VIN Under Test = 0.8 V VIN Under Test = 2.4 V f = 1 MHz Room Full Room Full Room Full Room Full Full Full Room Room Full Room Full Room Room 25 0.1 0.1 0.1 - 0.25 - 20 - 0.25 - 20 - 0.4 - 40 - 0.5 - 0.5 Typc Mind - 15 Maxd 15 35 45 0.25 20 0.25 20 0.4 40 0.5 0.5 - 0.25 -5 - 0.25 -5 - 0.4 - 10 - 0.5 - 0.5 D Suffix - 40 to 85 C Mind - 15 Maxd 15 35 45 0.25 5 0.25 5 0.4 10 0.5 0.5 nA Unit V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Input Capacitancee Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Symbol VANALOG rDS(on) IS(off) ID(off) ID(on) IIL IIH CIN 0.005 0.005 5 68 42 A pF tON tOFF tD Q RL = 300 , CL = 35 pF VS = 10 V, See Figure 2 DG413HS Only, VS = 10 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 10 nF 105 127 80 94 105 116 80 90 ns 20 22 pC Document Number: 72053 S-71155-Rev. B, 11-Jun-07 www.vishay.com 3 DG411HS/412HS/413HS Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf RL = 50 , CL = 5 pF f = 1 MHz A Suffix - 55 to 125 C Tempb Room Room Room f = 1 MHz Room Room Room Full V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full Room Full Room Full Typc - 91 - 88 12 12 30 0.0001 - 0.0001 0.0001 - 0.0001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5 A pF Mind Maxd D Suffix - 40 to 85 C Mind Maxd Unit Parameter Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee e Symbol OIRR XTALK CS(off) CD(off) CD(on) Dynamic Characteristics (Cont'd) dB Channel On Capacitance Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL IGND SPECIFICATIONSa FOR UNIPOLAR SUPPLIES Test Conditions Unless Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix - 55 to 125 C Tempb Full V+ = 10.8 V, IS = - 10 mA VD = 3 V, 8 V Room Full Room Hot Room Hot Room Room Room Hot V+ = 13.2 V, VIN = 0 or 5 V Logic Supply Current Ground Current IL IGND Room Hot Room Hot Room Hot 49 Typc Mind Maxd 12 80 100 140 180 70 79 D Suffix - 40 to 85 C Mind Maxd 12 80 100 140 160 70 74 ns Unit V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Power Supplies Positive Supply Current Negative Supply Current Symbol VANALOG rDS(on) tON tOFF tD Q RL = 300 , CL = 35 pF VS = 8 V, See Figure 2 DG413HS Only, VS = 8 V RL = 300 , CL = 35 pF Vg = 6 V, Rg = 0 , CL = 1 nF 95 36 60 60 0.0001 - 0.0001 0.0001 - 0.0001 -1 -5 -1 -5 pC 1 5 -1 -5 1 5 -1 -5 1 5 1 5 A I+ I- Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 72053 S-71155-Rev. B, 11-Jun-07 DG411HS/412HS/413HS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 65 rDS(on) - Drain-Source On-Resistance () 300 rDS(on) - Drain-Source On-Resistance () TA = 25 C V+ = 3.0 V VL = 3 V TA = 25 C VL = 5 V 55 5V 250 45 8V 10 V 12 V 15 V 200 V+ = 5.0 V 35 150 25 100 15 20 V 50 V+ = 8.0 V V+ = 12.0 V V+ = 15.0 V 5 - 20 0 - 15 - 10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 VD - Drain Voltage (V) VD - Drain Voltage (V) V+ = 20.0 V 16 18 20 On-Resistance vs. VD and Dual Supply Voltage 50 rDS(on) - Drain-Source On-Resistance () V+ = + 5 V V - = - 15 V VL = 5 V ID(on) IS(off) ID(off) - 25 45 40 35 On-Resistance vs. VD and Unipolar Supply Voltage V+ = 15 V V - = - 15 V VL = 5 V 125 C 30 85 C 25 25 C 20 - 55 C 15 10 5 - 15 25 0 IS, ID (pA) - 50 - 75 - 100 - 15 -10 -5 0 5 10 15 - 10 VD or V S - Drain or Source Voltage (V) -5 0 5 VD - Drain Voltage (V) 10 15 Leakage Current vs. Analog Voltage 75 rDS(on) - Drain-Source On-Resistance () 65 125 C 85 C 45 35 25 15 5 0 2 4 6 8 10 12 VD - Drain Voltage (V) 25 C LOSS, OIRR, XTLAK (dB) 55 V+ = 12 V V- = 0 V VL = 5 V 0 - 10 0 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 - 110 On-Resistance vs. VD and Temperature LOSS XTALK OIRR V+ = 15 V V - = - 15 V VL = 5 V RL = 50 - 55 C 100 K 1M 10 M Frequency (Hz) 100 M 1G On-Resistance vs. VD and Temperature Insertion Loss, Off-Isolation, Crosstalk vs. Frequency www.vishay.com 5 Document Number: 72053 S-71155-Rev. B, 11-Jun-07 DG411HS/412HS/413HS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 80 60 Q - Charge Injection (pC) 40 V = 15 V 20 0 - 20 - 40 - 60 - 80 - 100 - 15 V = 12 V Q - Charge Injection (pC) 100 80 60 40 20 0 V = 12 V - 20 - 40 - 60 - 80 - 10 -5 0 5 10 15 - 100 - 15 V = 15 V - 10 -5 0 5 10 15 V - Drain Voltage (V) VS - Source Voltage (V) Charge Injection vs. Analog Voltage 140 V+ = 15 V V - = - 15 V VL = 5 V 140 Charge Injection vs. Analog Voltage 120 120 V+ = 12 V V- = 0 V VL = 5 V tON TON/TOFF (ns) 80 tON 60 tOFF 40 TON/TOFF (ns) 100 100 80 60 tOFF 40 20 - 55 - 35 - 15 5 25 45 65 85 105 125 20 - 55 - 35 - 15 5 Temperature (C) 25 45 65 Temperature (C) 85 105 125 Switching Time vs. Temperature 100 mA 10 mA 1 mA I SUPPLY 100 A 10 A IL 1 A 100 nA 10 nA 10 100 1k 10 k 100 k 1M V+ = 15 V V - = - 15 V VL = 5 V = 1 SW = 4 SW I+, I- Switching Time vs. Temperature 10 M f - Frequency (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 6 Document Number: 72053 S-71155-Rev. B, 11-Jun-07 DG411HS/412HS/413HS Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VVIN Level Shift/ Drive V+ GND D V- Figure 1. TEST CIRCUITS +5V + 15 V 3V 50 % 0V VL 10 V S IN GND VRL 300 CL 35 pF 0V tON - 15 V Note: CL (includes fixture and stray capacitance) VO = V S RL RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control V+ D VO Switch Input* VS VO tOFF tr < 5 ns tf < 5 ns Logic Input 90 % 90 % Figure 2. Switching Time +5V + 15 V Logic Input 3V 50 % 0V VS1 VO1 Switch Output 0V VS2 VO2 0V VL VS1 VS2 S1 IN1 S2 IN2 GND V+ D1 D2 VO2 VO1 90 % RL1 300 VRL2 300 CL2 35 pF CL1 35 pF Switch Output 90 % tD tD - 15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413HS) Document Number: 72053 S-71155-Rev. B, 11-Jun-07 www.vishay.com 7 DG411HS/412HS/413HS Vishay Siliconix TEST CIRCUITS VO +5V + 15 V VO INX OFF VO CL 1 nF VINX OFF ON Q = VO x CL OFF ON OFF Rg VL S IN V+ D Vg 3V GND -15 V Figure 4. Charge Injection +5V C VL VS Rg = 50 0 V, 2.4 V S2 NC IN2 GND VO VS - 15 V VC RL D2 VO S1 IN1 V+ D1 50 + 15 V C 0 V, 2.4 V XTALK Isolation = 20 log C = RF bypass Figure 5. Crosstalk +5V C VL VS Rg = 50 0 V, 2.4 V IN RL 50 GND VC 0 V, 2.4 V D - 15 V VO VS C = RF Bypass - 15 V GND VC IN S V+ + 15 V C C VL V+ +5V + 15 V C D VO S Meter HP4192A Impedance Analyzer or Equivalent Off Isolation = 20 log Figure 6. Off-Isolation Figure 7. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72053. www.vishay.com 8 Document Number: 72053 S-71155-Rev. B, 11-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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