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| Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 Designation System CA 04 P 2 S 14 T HS G = Chip Array = Dimensions of the device 04x05 (Length x width in 1/100 inch) = Design (Parallel internal structure) = Number of elements = Special Tolerance of the varistor voltage = Max. operating voltage = Three layer termination (Ni-barrier) = Designed for protection of High Speed data lines = Taped version, cardboard tape, 7" reel (5000 pcs/reel) Figure l b l = 1,37 0,15 b = 1,0 + 0/ -0,15 s = 0,70 max. d = 0,36 0,1 eRef = 0,64 d s (All dimensions in mm) e As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE 1/7 Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 V-I-Characteristic 200 V v 100 80 60 40 VAR9733A 20 10 8 6 4 2 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 i A 10 1 Max. current, energy, operating voltage and average power dissipation depending on ambient temperature % 100 90 80 70 60 50 40 30 20 10 0 -55 70 80 90 100 110 120 Ambient temperature 130 140 150 C ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE 2/7 Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 Electrical Data Max. operating voltage RMS voltage DC voltage Varistor voltage (@ 1 mA) Max. clamping voltage (@ 1 A) Max. average power dissipation Max. surge current (8/20 s) Max. energy absorption (ESD) (@ ESD acc. IEC61000-4-2; 15kV Air Discharge, 150pF, 330 ) Capacitance 1 Veff = 14 V VDC = 16 V VV = 23 - 33 V VC = 66 V Pmax = 3 mW Imax = 1 x 2 A Emax = 30mJ C = 10pF1 measured @ 1 MHz, 1 V, 25C, typical value Response time Operating temperature Storage temperature (mounted parts) Termination material < 0.5 ns -40 ... +85 C -40 ... +125 C Ag/Ni/Sn (thickness not specified, adjusted to fulfill wettability specification acc. to IEC 60068-2-58) Application Note The described component is designed to meet acc. IEC61000-4-2 (8kV contact discharge 150pF, 330 ). ESD level 4 requirements ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE 3/7 Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 Signal Insertion Loss1 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 50 100 150 frequency [MHz] 200 250 300 1 typical values; measured with network analyzer HP8753 E/S containing s-parameter test set Stability to Multiple ESD-Discharges2 40 30 20 10 0 0 1 10 100 1000 10000 number of ESD pulses 2 (8kV contact discharge; 150pF, 330 ; acc. IEC 61000-4-2). ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE 4/7 Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 Recommended Geometry of Solder Pads A = 0,4 mm B = 0,55 mm C = 0,28 mm E = 0,64 mm E B C A Recommended Soldering Temperature Profiles 300 C 250 T 200 150 100 max 2C/s 50 0 0 50 100 150 t 200 s 250 ~ 245 C 215 C 180 C ~ 40 s ~ 100 s This component is suited for IR-soldering. Max. reflow cycles: 2x As far as possible, the components shall be employed within 6 months. They should be left in their original packings to avoid soldering problems due to oxidized contacts. Storage temperature: -25 to 45C. Relative humidity: <75% annual average, <95% on max. 30 days in a year. The usage of mild, non activated fluxes for soldering is recommended, as well as proper cleaning of the PCB. ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE 5/7 Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 Taping According to IEC 60286-3 T P 0 D 0 P 2 E F B 0 T 1 T 2 T 1 A 0 P 1 Direction of unreeling Dimensions and tolerances Tape material: cardboard Definition Compartment width Compartment length Sprocket hole diameter Sprocket hole pitch Distance center hole to center compartment Pitch of the component compartments Tape width Distance edge to center of hole Distance center hole to center compartment Distance compartment to edge Thickness of cardboard tape Overall thickness 1) Symbol A0 B0 D0 P0 P2 P1 W E F G T T2 Dim. 1.05 1.57 1.5 4.0 2.0 4.0 8.0 1.75 3.5 0.75 0.75 0.9 Tolerance 0.05 0.05 +0.1 /-0 0.1 1) 0.05 0.1 0.3 0.1 0.05 min. 0.2 max. 0.2 mm over any 10 pitches Tape end (trailer) 40 min. empty cavities Leader 25 min. empty cavities 300 mm cover tape ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE G W 6/7 Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination Preliminary data sheet (parameters may be changed if necessary) CA04P2S14THSG B72762A8140S160 Package Each reel in airtight plastic bag with desiccant bag. Dimensions approx. 220 x 200 mm. Weight approx. 170 g Package: 8 mm tape Reel material: plastic Definition Reel diameter Reel width (inside) Reel width (outside) Symbol A W1 W2 Dim. 180 8.4 14.4 Tol. -2 +1.5 /-0 max. EPCOS AG 2002. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. Purchase orders are subject to the General Conditions for the Supply of Products and Services of the Electrical and Electronics Industry recommended by the ZVEI (German Electrical and Electronic Manufacturers' Association), unless otherwise agreed. ISSUE DATE 08.07.02 ISSUE c PUBLISHER KB VS PE PAGE 7/7 |
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