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| RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION RT3C99M is a composite transistor built with two 2SC5938A chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 0.65 0.2 Unitmm FEATURE Silicon NPN epitaxial type Each transistor elements are independent. 2.0 APPLICATION muting circuitswitching circuit 0.65 Mini package for easy mounting 0.65 00.1 Tr1 Tr2 TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 JEITASC-88 MAXIMUM RATING (Ta=25) SYMBOL VCBO VEBO VCEO IC PCTotal Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipationTa=25 Junction temperature Storage temperature RATING 50 40 20 200 150 125 -55125 UNIT V V V mA mW MARKING 6 5 4 .C 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25) Symbol ICBO IEBO hFE* VCE(sat) fT Cob Ron Parameter Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Output On-resistance Test conditions VCB =50V,IE=0 VEB=40V,IC=0 VCE=2V,IC=4mA IC=30mA,IB=3mA VCE=6V,IE=-4mA VCB=10V,IE=0,f=1MHZ IB=5mA, f=1MHz Item hFE Limits Min 200 Typ 30 30 5.0 0.95 A 200700 Max 0.1 0.1 1200 B 3501200 Unit A A V MHZ pF * : It shows hFE classification in right table. TYPICAL CHARACTERISTICS (Tr1Tr2) COMMON EMITTER OUTPUT 60 COLLECTOR CURRENTIC(mA) Ta=25 50 40 30 20 10 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGEVCE(V) 300A 250A 200A 150A 100A IB=50A COLLECTOR CURRENT IC(mA) 40 50 COMMON EMITTER TRANSFER Ta=25 VCE=2V 30 20 10 0 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) 1 ISAHAYA ELECTRONICS CORPORATION RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT DC REVERSE CURRENT GAIN hFER 10000 Ta=25 VCE=-2V 1000 10000 DC FORWARD CURRENT GAIN hFE Ta=25 VCE=2V 1000 100 100 10 0.1 1 10 100 COLLECTOR CURRENT IC(mA) 10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) -100 COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 C TO E SATURATION VOLTAGE VCE(sat)(mV) ON RESISTANCE Ron() 10 ON RESISTANCE VS. BASE CURRENT Ta=25 IC/IB=10 100 Ta=25 10 1 1 0.1 0.1 1 10 100 COLLECTOR CURRENT IC(mA) 1000 0.1 0.1 1 BASE CURRENT 10 IB(mA) 100 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 100 GAIN BAND WIDTH PRODUCT(MHz) Ta=25 VCE=6V COLLECTOR OUTPUT CAPACITANCE VS.COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25 IE=0 f=1MHz 10 10 -0.1 -1 EMITTER CURRENT -10 IE(mA) -100 1 0.1 1 10 VCB(V) 100 COLLECTOR TO BASE VOLTAGE ISAHAYA ELECTRONICS CORPORATION |
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