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Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 4, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. * Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain -- 23.9 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features * Integrated ESD Protection * Excellent Thermal Stability * Facilitates Manual Gain Control, ALC and Modulation Techniques * 200C Capable Plastic Package * RoHS Compliant * TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2010NR1 MRF6V2010NBR1
10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1
CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 0.5, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 10 W CW Symbol RJC Value (1,2) 3.0 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRF6V2010NR1 MRF6V2010NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 5 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 28 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 70 mAdc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss -- -- -- 0.13 7.3 16.3 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 -- 1.68 2.68 0.26 3 3.5 -- Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS -- 110 -- -- -- -- -- -- 10 -- 50 2.5 Adc Vdc Adc mA Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W, f = 220 MHz, CW Gps D IRL 22.5 58 -- 23.9 62 - 14 25.5 -- -9 dB % dB
ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices.
MRF6V2010NR1 MRF6V2010NBR1 2 RF Device Data Freescale Semiconductor
L2 B1 VBIAS + C2 + C3 C4 C5 C6 C7 C8 L3 R1 RF INPUT Z1 C1 Z2 Z3 L1 Z4 C9 DUT C10 C17 RF OUTPUT C11 C12 C13 C14
B2 + C15 C16 VSUPPLY
Z5
Z6
Z7
Z8
Z9
Z10 C18
Z11
Z1 Z2 Z3 Z4 Z5 Z6
0.235 1.190 0.619 0.190 0.293 0.120
x 0.082 x 0.082 x 0.082 x 0.270 x 0.270 x 0.270
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.062 x 0.270 Microstrip 0.198 x 0.082 Microstrip 5.600 x 0.082 Microstrip 0.442 x 0.082 Microstrip 0.341 x 0.082 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6V2010NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values
Part B1, B2 C1, C8, C11, C18 C2 C3 C4, C13 C5, C14 C6, C15 C7, C12 C9 C10 C16 C17 L1 L2, L3 R1 Description 95 , 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 F, 35 V Tantalum Capacitor 22 F, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 F Chip Capacitors 2.2 F, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 27 pF Chip Capacitor 17.5 nH Inductor 82 nH Inductors 120 , 1/4 W Chip Resistor Part Number 2743021447 ATC100B102JT50XT T491D106K035AT T491X226K035AT ATC200B393KT50XT ATC200B223KT50XT CDR33BX104AKYS C1825C225J5RAC 27271SL ATC100B120JT500XT ESMG630ELL471MK205 ATC100B270JT500XT B06T 1812SMS - 82NJ CRCW1206120RFKEA Manufacturer Fair - Rite ATC Kemet Kemet ATC ATC Kemet Kemet Johanson ATC United Chemi - Con ATC CoilCraft CoilCraft Vishay
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 3
C5 C4 B1 C7 C2 C3 R1 L1 C8 CUT OUT AREA C12 C11 C6
C14 C13 L2 C15 B2 C16
L3 C10
C17
C18
C1
C9
MRF6V2010N/NB Rev. 3
Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout
MRF6V2010NR1 MRF6V2010NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
100 100
10 Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 0.1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Ciss C, CAPACITANCE (pF)
10
1
1
TC = 25C 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 200
Figure 3. Capacitance versus Drain - Source Voltage
0.35 0.3 ID, DRAIN CURRENT (AMPS) VGS = 3 V 0.25 0.2 2.75 V 0.15 2.63 V 0.1 0.05 2.25 V 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 18 0.1 2.5 V Gps, POWER GAIN (dB) 23 22 23 mA 21 20 15 mA 19 25 24
Figure 4. DC Safe Operating Area
IDQ = 45 mA 38 mA 30 mA
VDD = 50 Vdc f1 = 220 MHz 1 Pout, OUTPUT POWER (WATTS) CW 10 20
Figure 5. DC Drain Current versus Drain Voltage
-20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -25 -30 -35 38 mA -40 -45 -50 -55 1 IDQ = 60 mA 45 mA 15 mA 23 mA Pout, OUTPUT POWER (dBm) 45 47
Figure 6. CW Power Gain versus Output Power
Ideal P3dB = 40.87 dBm (12.2 W)
30 mA
43 P1dB = 40.43 dBm (11.04 W) 41
Actual
VDD = 50 Vdc f1 = 220 MHz, f2 = 220.1 MHz Two-Tone Measurements 100 kHz Tone Spacing 10 20
39 VDD = 50 Vdc, IDQ = 30 mA f = 220 MHz 37 13 15 17 19 21 23
Pout, OUTPUT POWER (WATTS) PEP
Pin, INPUT POWER (dBm)
Figure 7. Third Order Intermodulation Distortion versus Output Power
Figure 8. CW Output Power versus Input Power
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
26 24 Gps, POWER GAIN (dB) 22 20 18 16 14 25 V 12 VDD = 20 V 10 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS) CW 30 V IDQ = 30 mA f = 220 MHz 40 V 35 V 45 V 50 V Pout, OUTPUT POWER (dBm) 40 25_C 35 85_C 45 TC = -30_C
30 VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 0 5 10 15 20 25
25 20 Pin, INPUT POWER (dBm)
Figure 9. Power Gain versus Output Power
26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 0.1 1 85_C 25_C D TC = -30_C Gps
Figure 10. Power Output versus Power Input
72 -30_C 25_C 63 85_C 54 45 36 27 18 VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 10 9 0 20 D, DRAIN EFFICIENCY (%) 170
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
27 26 Gps, POWER GAIN (dB) 25 24 23 22 21 20 19 0 2 4 6 8 10 12 Pout, OUTPUT POWER (WATTS) CW Gps @ 450 MHz VDD = 50 Vdc IDQ = 30 mA D @ 450 MHz D @ 64 MHz D @ 220 MHz Gps @ 130 MHz Gps @ 220 MHz Gps @ 64 MHz 60 50 40 30 20 10 0 105 90 110 130 150 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 10 W CW, and D = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. D, DRAIN EFFICIENCY (%) D @ 130 MHz 70 80 108
MTTF (HOURS)
107
106
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
Figure 13. MTTF versus Junction Temperature MRF6V2010NR1 MRF6V2010NBR1 6 RF Device Data Freescale Semiconductor
Zo = 50
Zsource f = 220 MHz f = 220 MHz Zload
VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW f MHz 220 Zsource W 20 + j25 Zload W 75 + j44
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 7
C10 C9
C8
C6
C14
C16 B2
C7 B1 C5 C13 C4 L1 CUT OUT AREA
C15 L5
C18 L2 L3 L4
C17 C19
C1
R1 C2
C3
C11 C12 130 MHz Rev. 1
Figure 15. MRF6V2010NR1(NBR1) Test Circuit Component Layout -- 130 MHz
Table 7. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values -- 130 MHz
Part B1, B2 C1, C5, C18, C19 C2, C12 C3 C4, C13 C6, C14 C7, C15 C8, C16 C9 C10 C11 C17 L1 L2, L5 L3 L4 R1 PCB Description 95 , 100 MHz Long Ferrite Beads, Surface Mount 1000 pF Chip Capacitors 0.6 - 4.5 pF Variable Capacitors, Gigatrim 27 pF Chip Capacitor 2.2 F, 50 V Chip Capacitors 0.1 F, 50 V Chip Capacitors 22K pF Chip Capacitors 39K pF Chip Capacitors 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 16 pF Chip Capacitor 330 F, 63 V Electrolytic Capacitor 17.5 nH Inductor 82 nH Inductors 35.5 nH Inductor 43 nH Inductor 100 , 1/4 W Chip Resistor PCB Material 0.030" Part Number 2743021447 ATC100B102JT50XT 27271SL ATC100B270JT500XT C1825C225J5RAC CDR33BX104AKYM ATC200B223KT50XT ATC200B393KT50XT T491X226K035AT T491D106K035AT ATC100B160JT500XT MCRH63V337M13X21 - RH B06T 1812SMS - 82NJ B09T B10T CRCW1206100RFKEA CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55 Manufacturer Fair - Rite ATC Johanson ATC Kemet Kemet ATC ATC Kemet Kemet ATC Multicomp CoilCraft CoilCraft CoilCraft CoilCraft Vishay Arlon
MRF6V2010NR1 MRF6V2010NBR1 8 RF Device Data Freescale Semiconductor
C10 C9
C8
C6
C16
C18 B2
C7 B1 C20 C3 C4 L1 C5 L2 CUT OUT AREA C11
C17 L4
C19 L3 C12 C13 C15
C1
C2
R1
C14
450 MHz Rev. 1
Figure 16. MRF6V2010NR1(NBR1) Test Circuit Component Layout -- 450 MHz
Table 8. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values -- 450 MHz
Part B1, B2 C1, C5, C12, C15 C2, C3 C4, C11 C6, C16 C7, C17 C8, C18 C9 C10 C13, C14 C19 C20 L1 L2, L4 L3 R1 PCB Description 95 , 100 MHz Long Ferrite Beads, Surface Mount 240 pF Chip Capacitors 10 pF Chip Capacitors 2.2 F, 50 V Chip Capacitors 0.1 uF 50V Chip Capacitors 22K pF Chip Capacitors 39K pF Chip Capacitors 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 6.2 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitor 47 F, 50 V Electrolytic Capacitor 17.5 nH Inductor 82 nH Inductors 5.0 nH Inductor 120 , 1/4 W Chip Resistor PCB Material 0.030" Part Number 2743021447 ATC100B241JT200XT ATC100B100JT500XT C1825C225J5RAC CDR33BX104AKYM ATC200B223KT50XT ATC200B393KT50XT T491X226K035AT T491D106K035AT ATC100B6R2BT500XT MCGPR63V477M13X26 - RH 476KXM050M B06T 1812SMS - 82NJ A02T CRCW1206120RFKEA CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55 Manufacturer Fair - Rite ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Multicomp Illinois Cap CoilCraft CoilCraft CoilCraft Vishay Arlon
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 9
C11 C10
C9
C7
C18
C20 B2
C8 B1 C6 C5 L1 C4 L2 C16
C19 L6
C17 L3 L4 L5
C21 C15
CUT OUT AREA
C1
R1
C2 C3
C14 C12 C13
64 MHz Rev. 1
Figure 17. MRF6V2010NR1(NBR1) Test Circuit Component Layout -- 64 MHz
Table 9. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values -- 64 MHz
Part B1, B2 C1, C5, C15, C17 C2 C3, C14 C4, C16 C6 C7, C18 C8, C19 C9, C20 C10 C11 C12 C13 C21 L1 L2 L3, L4, L5, L6 R1 PCB Description 95 , 100 MHz Long Ferrite Beads, Surface Mount 1000 pF Chip Capacitors 91 pF Chip Capacitor 22 pF Chip Capacitors 2.2 F, 50 V Chip Capacitors 220 nF, 50 V Chip Capacitor 0.1 F, 50 V Chip Capacitors 100K pF Chip Capacitors 22K pF Chip Capacitors 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 68 pF Chip Capacitor 27 pF Chip Capacitor 330 F, 63 V Electrolytic Capacitor 17.5 nH Inductor 43 nH Inductor 82 nH Inductors 180 , 1/4 W Chip Resistor PCB Material 0.030 Part Number 2743021447 ATC100B102JT50XT ATC100B910JT500XT ATC100B220JT500XT C1825C225J5RAC C1812C224J5RAC CDR33BX104AKYM ATC200B104KT50XT ATC200B223KT50XT T491X226K035AT T491D106K035AT ATC100B680JT500XT ATC100B270JT500XT MCRH63V337M13X21 - RH B06T B10T 1812SMS - 82NJ CRCW1206180RFKEA CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Kemet ATC ATC Kemet Kemet ATC ATC Multicomp CoilCraft CoilCraft CoilCraft Vishay Arlon
MRF6V2010NR1 MRF6V2010NBR1 10 RF Device Data Freescale Semiconductor
Zo = 50
f = 450 MHz Zsource f = 220 MHz Zsource f = 130 MHz Zsource f = 220 MHz Zload f = 64 MHz Zsource f = 130 MHz Zload f = 64 MHz Zload f = 450 MHz Zload
VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW f MHz 64 130 220 450 Zsource W 37.5 + j15.1 26.7 + j21.3 20.0 + j25.4 7.70 + j21.0 Zload W 94.5 + j16.7 83.8 + j35.0 75.0 + j44.0 43.0 + j49.0
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 18. Series Equivalent Source and Load Impedance
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 11
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (VDD = 50 V, IDQ = 30 mA, TC = 25C, 50 Ohm System)
f MHz 10 20 30 40 50 60 70 80 90 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 S11 |S11| 0.997 0.994 0.992 0.987 0.981 0.974 0.965 0.955 0.944 0.933 0.912 0.892 0.873 0.856 0.841 0.828 0.819 0.810 0.804 0.799 0.796 0.794 0.793 0.793 0.794 0.796 0.798 0.800 0.803 0.807 0.810 0.814 0.817 0.821 0.825 0.829 0.833 0.837 0.840 0.843 0.847 0.850 0.854 0.857 - 5.0 - 9.5 - 14.5 - 19.3 - 24.0 - 28.6 - 33.0 - 37.4 - 41.6 - 45.7 - 53.3 - 60.4 - 66.7 - 72.7 - 78.1 - 83.0 - 87.5 - 91.7 - 95.5 - 99.0 - 102.2 - 105.1 - 107.8 - 110.4 - 112.7 - 114.9 - 116.9 - 118.8 - 120.5 - 122.2 - 123.8 - 125.4 - 126.8 - 128.1 - 129.3 - 130.5 - 131.6 - 132.7 - 133.8 - 134.8 - 135.8 - 136.8 - 137.8 - 138.7 |S21| 11.520 11.419 11.356 11.278 11.187 11.042 10.848 10.636 10.405 10.147 9.603 9.061 8.516 7.993 7.497 7.040 6.612 6.214 5.845 5.507 5.192 4.901 4.630 4.382 4.152 3.937 3.733 3.547 3.372 3.213 3.061 2.919 2.784 2.661 2.545 2.436 2.334 2.237 2.144 2.058 1.977 1.900 1.828 1.760 S21 175.6 171.6 167.9 164.1 160.1 156.1 152.1 148.2 144.5 140.8 134.2 127.9 122.2 116.9 112.1 107.5 103.3 99.3 95.7 92.2 88.8 85.7 82.8 79.9 77.2 74.6 72.2 69.8 67.6 65.4 63.3 61.2 59.3 57.5 55.7 53.9 52.2 50.5 48.9 47.3 45.8 44.4 43.0 41.6 |S12| 0.000790 0.00157 0.00232 0.00307 0.00380 0.00449 0.00513 0.00574 0.00631 0.00683 0.00776 0.00851 0.00914 0.00967 0.0101 0.0104 0.0107 0.0109 0.0110 0.0112 0.0112 0.0113 0.0112 0.0112 0.0112 0.0112 0.0111 0.0110 0.0109 0.0108 0.0107 0.0105 0.0104 0.0103 0.0101 0.00996 0.00981 0.00963 0.00946 0.00928 0.00910 0.00894 0.00876 0.00859 S12 84.6 84.3 78.1 74.6 71.0 67.4 63.8 60.4 57.0 53.8 47.9 42.4 37.6 32.9 28.7 24.9 21.3 18.0 15.0 11.9 9.1 6.5 4.1 2.0 - 0.3 - 2.5 - 4.4 - 6.5 - 8.5 - 10.0 - 11.9 - 13.5 - 14.9 - 16.6 - 18.1 - 19.6 - 21.0 - 22.4 - 23.7 - 25.0 - 26.1 - 27.3 - 28.6 - 29.7 |S22| 0.960 0.962 0.963 0.964 0.964 0.963 0.961 0.958 0.955 0.951 0.944 0.936 0.929 0.923 0.918 0.914 0.912 0.909 0.908 0.907 0.906 0.906 0.906 0.906 0.906 0.907 0.907 0.908 0.908 0.909 0.910 0.911 0.912 0.914 0.915 0.917 0.918 0.920 0.921 0.923 0.924 0.926 0.928 0.930 S22 - 0.8 - 3.5 - 5.5 - 7.7 - 9.9 - 12.1 - 14.2 - 16.3 - 18.4 - 20.4 - 24.2 - 27.9 - 31.3 - 34.6 - 37.9 - 41.1 - 44.2 - 47.2 - 50.2 - 53.0 - 55.9 - 58.6 - 61.4 - 64.1 - 66.7 - 69.3 - 71.8 - 74.2 - 76.7 - 79.0 - 81.3 - 83.6 - 85.8 - 87.9 - 90.0 - 92.1 - 94.1 - 96.0 - 97.9 - 99.7 - 101.4 - 103.0 - 104.7 - 106.2 (continued)
MRF6V2010NR1 MRF6V2010NBR1 12 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (VDD = 50 V, IDQ = 30 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 800 820 840 860 880 900 S11 |S11| 0.858 0.861 0.864 0.867 0.870 0.873 - 139.7 - 140.7 - 141.6 - 142.6 - 143.5 - 144.5 |S21| 1.697 1.636 1.578 1.523 1.471 1.421 S21 40.2 38.9 37.6 36.4 35.1 33.9 |S12| 0.00839 0.00818 0.00798 0.00781 0.00763 0.00745 S12 - 31.1 - 32.1 - 33.1 - 33.8 - 34.8 - 35.9 |S22| 0.932 0.934 0.935 0.936 0.938 0.939 S22 - 107.6 - 109.0 - 110.4 - 111.7 - 112.9 - 114.1
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
MRF6V2010NR1 MRF6V2010NBR1 14 RF Device Data Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 15
MRF6V2010NR1 MRF6V2010NBR1 16 RF Device Data Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 17
MRF6V2010NR1 MRF6V2010NBR1 18 RF Device Data Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 19
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Feb. 2007 May 2007 * Initial Release of Data Sheet * Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1, C8, C11, C18, C4, C13, C5, and C14, p. 3 * Corrected Series Impedance Zsource and Zload values, Fig. 13, Series Equivalent Source and Load Impedance, p. 7 2 Aug. 2007 * Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 12 - 14. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 15 - 17. Issue D: Removed Drain - ID label from View Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Description
*
* Corrected Test Circuit Component part number in Table 6, Component Designations and Values for R1, p. 3 * Added Figure 12, Power Gain and Drain Efficiency versus CW Output Power, p. 6 * Corrected plot points to show 50 Ohms in Figure 14, Series Equivalent Source and Load Impedance, p. 7 * Added Figures 15 - 17, Test Circuit Component Layout and Tables 7 - 9, Test Circuit Component Designations and Values to show 130, 450 and 64 MHz, respectively, p. 8 - 10 * Added Figure 18, Series Equivalent Source and Load Impedance to show 64, 130, 220 and 450 MHz plot points, p. 11 3 Feb. 2008 * Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1 * Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 * Replaced Case Outline 1337 - 04, Issue D, with 1337 - 04, Issue E, p. 15 - 17. Corrected document number 98ASA99191D on Sheet 3. 4 Mar. 2008 * Corrected Zsource (37.5 + j15.1) and Zload (94.5 + j16.7) 64 MHz values and replotted both, p. 11 * Added S - Parameter table, p. 12, 13
MRF6V2010NR1 MRF6V2010NBR1 20 RF Device Data Freescale Semiconductor
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MRF6V2010NR1 MRF6V2010NBR1
Document Number: RF Device Data MRF6V2010N Rev. 4, 3/2008 Freescale Semiconductor
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