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| SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3600S EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e| =13dB (f=1GHz). D 2 L E B L 2 A G H 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 20 10 1.5 40 150 150 -55 150 UNIT P P V V V mA mW C N J DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 K M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. Type Name R ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain |S21e|2 (2) NF (1) Noise Figure NF (2) VCE=8V, IC=5mA, f=2GHz 1.7 dB Note 1 : hFE Classification H:50~100, J:80~160, K:125~250 Note 2 : Cre is measured by 3 terminal method with capacitance bridge. VCE=8V, IC=20mA, f=2GHz VCE=8V, IC=5mA, f=1GHz 7 1.1 2.5 dB dB SYMBOL ICBO IEBO hFE (Note1) Cob VCB=10V, IE=0, f=1MHz (Note2) Cre fT |S21e|2 (1) VCE=8V, IC=20mA VCE=8V, IC=20mA, f=1GHz 7 10 0.5 10 13 0.95 pF GHz dB TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=8V, IC=20mA MIN. 50 TYP. 0.7 MAX. 1 1 250 pF UNIT A A 2007. 8. 22 Revision No : 0 1/5 KTC3600S TYPICAL CHARACTERISTICS (Ta=25 C) OUTPUT CAPACITANCE C ob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) h FE - I C 300 DC CURRENT GAIN h FE 200 C ob , C re - VCB 5 3 f=1MHz Ta=25 C 100 70 50 30 VCE=8V Ta=25 C 1 0.5 0.3 C ob C re 10 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT I C (mA) 0.1 0.1 0.3 0.5 1 3 5 10 COLLECTOR-BASE VOLTAGE VCB (V) f T - IC TRANSITION FREQUENCY f T (GHz) VCE=8V Ta=25 C S 2le (dB) 12 10 8 6 4 2 0 2 - IC 12 10 8 6 4 2 0 1 INSERTION GAIN S 2le 2 VCE=8V f=2GHz Ta=25 C 3 5 7 10 30 1 3 5 7 10 30 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT I C (mA) S 2le (dB) 30 2 -f 5 NF - I C VCE=8V Ta=25 C NOISE FIGURE NF (dB) 2 25 20 15 10 5 0 0.1 VCE=8V IC=20mA Ta=25 C S 2le 4 3 f=2G Hz INSERTION GAIN 2 1 0 Hz f=1G 0.2 0.3 0.5 0.7 1 2 3 1 2 3 5 7 10 20 30 50 FREQUENCY f (GHz) COLLECTOR CURRENT IC (mA) 2007. 8. 22 Revision No : 0 2/5 KTC3600S 10 (dB) 8 6 4 2 0 0 2 4 6 8 10 IC =20mA f=2GHz Ta=25 C COLLECTOR POWER DISSIPATION P C (mW) S 2le 2 - VCE Pc - Ta 300 INSERTION GAIN S 2le 2 200 100 0 0 50 100 150 COLLECTOR-EMITTER VOLTGE VCE (V) AMBIENT TEMPERATURE Ta ( C) S-PARAMETER (VCE=8V, IC=5mA, ZO=50 Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.683 0.462 0.343 0.282 0.249 0.236 0.233 0.234 0.238 0.251 , Ta=25 ) |S21| Ang. -50.1 -86.9 -113.1 -133.6 -151.0 -166.6 179.7 168.3 158.6 149.6 Mag. 10.186 7.472 5.618 4.407 3.663 3.128 2.759 2.457 2.224 2.038 Ang. 138.3 114.6 100.9 91.7 84.7 78.7 73.1 68.2 63.4 59.4 Mag. 0.049 0.071 0.086 0.101 0.115 0.131 0.150 0.168 0.185 0.203 |S12| Ang. 62.0 54.3 53.8 55.3 57.2 58.9 60.1 60.0 60.0 60.4 Mag. 0.773 0.556 0.448 0.392 0.360 0.339 0.330 0.319 0.311 0.302 |S22| Ang. -30.0 -39.6 -41.7 -41.6 -41.7 -41.7 -42.8 -45.0 -47.9 -50.2 |S11| (VCE=8V, IC=20mA, ZO=50 Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.319 0.213 0.185 0.176 0.174 0.178 0.186 0.194 0.199 0.215 |S11| , Ta=25 ) |S21| Ang. -91.9 -134.2 -160.0 -178.2 167.8 156.8 147.5 139.7 133.7 127.8 Mag. 18.338 10.303 7.111 5.415 4.400 3.712 3.236 2.874 2.583 2.369 Ang. 116.7 99.2 90.3 84.3 79.2 74.8 70.3 66.3 62.6 58.8 Mag. 0.033 0.054 0.076 0.098 0.120 0.143 0.168 0.190 0.211 0.232 |S12| Ang. 65.3 68.9 70.8 71.2 71.1 70.3 68.7 66.6 64.9 63.5 Mag. 0.494 0.312 0.258 0.236 0.228 0.226 0.226 0.223 0.216 0.211 |S22| Ang. -43.5 -42.4 -37.6 -34.3 -32.0 -31.5 -32.8 -35.9 -39.0 -41.9 2007. 8. 22 Revision No : 0 3/5 KTC3600S S11e VCE =8V I C =5mA Ta=25 C (UNIT : ) S21e VCE =8V I C =5mA Ta=25 C j50 120 90 10 60 8 0.4 6 1.0 0.8 4 1.2 2 1.6 2.0 j25 j100 f=0.2GHz j150 j10 2.0 10 25 150 30 j250 0 1.6 1.2 0.8 50 100 250 _ + 180 10 8 6 4 2 0 0 -j10 0.4 f=0.2GHz -j250 -j150 -150 -30 -j25 -j100 -120 -j50 -90 -60 S12e VCE =8V I C =5mA Ta=25 C 120 90 0.25 0.20 2.0 0.15 60 S22e VCE =8V I C =5mA Ta=25 C (UNIT : ) j25 j50 j100 j150 150 0.10 0.05 1.6 1.2 0.8 0.4 f=0.2GHz 0.05 0.10 0.15 0.20 30 j10 j250 _ + 180 0 0.25 0 10 25 50 0.8 100 250 0 1.6 0.4 1.2 f=0.2GHz -j10 -150 -30 -j25 -120 -90 -60 -j50 2.0 -j250 -j150 -j100 2007. 8. 22 Revision No : 0 4/5 KTC3600S S11e VCE =8V I C =20mA Ta=25 C (UNIT : ) j25 j50 S21e VCE =8V I C =20mA Ta=25 C 90 20 120 j100 j150 150 0.4 f=0.2GHz 16 12 60 30 8 0.6 1.2 1.6 2.0 j10 2.0 1.6 25 1.2 0.8 0.4 j250 4 50 100 250 0 10 _ + 180 20 16 12 8 4 0 0 -j10 f=0.2GHz -j250 -j150 -j25 -j100 -120 -j50 -90 -60 -150 -30 S12e VCE =8V I C =20mA Ta=25 C 120 90 0.25 60 0.20 1.6 0.15 2.0 S22e VCE =8V I C =20mA Ta=25 C (UNIT : ) j25 30 j10 j50 j100 j150 j250 150 0.10 0.05 1.2 0.8 0.4 f=0.2GHz 0 0.05 0.10 0.15 0.20 _ + 180 0.25 0 10 25 50 1.2 1.6 2.0 0.8 0.4 100 250 0 -j10 -150 -30 -j25 -120 -90 -60 -j50 f=0.2GHz -j250 -j150 -j100 2007. 8. 22 Revision No : 0 5/5 |
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