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 USBUF01P6
IPADTM EMI filter and line termination for USB upstream ports
Applications
EMI Filter and line termination for USB upstream ports on:

USB Hubs PC peripherals
Features

Monolithic device with recommended line termination for USB upstream ports Integrated Rt series termination and Ct bypassing capacitors. Integrated ESD protection Small package size
SOT-666IP (Internal pad)
Functional diagram
3.3 V Rt D1 Ct Rp D4
Description
The USB specification requires upstream ports to be terminated with pull-up resistors from the D+ and D- lines to Vbus. On the implementation of USB systems, the radiated and conducted EMI should be kept within the required levels as stated by the FCC regulations. In addition to the requirements of termination and EMC compatibility, the computing devices are required to be tested for ESD susceptibility. The USBUF01P6 provides the recommended line termination while implementing a low pass filter to limit EMI levels and providing ESD protection which exceeds IEC 61000-4-2 level 4 standard. The device is packaged in a SOT-666 which is the smallest available lead frame package (45% smaller than the standard SOT323).
Grd
3.3 V
Rt D2 Ct D3
Complies with the following standards:
IEC 61000-4-2 level4: 15 kV(air discharge) 8 kV(contact discharge) MIL STD 883E-Method 3015-7: Class 3 C = 100 pF R = 1500 3 positive strikes and 3 negative strikes (F = 1 Hz)
Benefits

EMI / RFI noise suppression Required line termination for USB upstream ports ESD protection exceeding IEC 61000-4-2 level 4 High flexibility in the design of high density boards Tailored to meet USB 2.0 standard (low speed and full speed data transmission)
Order codes
Part Number USBUF01P6 Marking U
TM: IPAD is a trademeark of STMicroelectronics
August 2006
Rev 6
1/9
www.st.com 9
Characteristics
USBUF01P6
1
Characteristics
Table 1.
Symbol
Absolute maximum rating (Tamb = 25 C)
Parameter IEC61000-4-2 air discharge IEC61000-4-2 contact discharge MIL STD 883E - Method 3015-7 Value 16 9 25 150 -55 to +150 260 -40 to + 85 Unit
VPP Tj Tstg TL Top
ESD discharge Junction temperature Storage temperature range
kV C C C C
Maximum lead temperature for soldering during 10 s at 5 mm for case Operating temperature range
Table 2.
Symbol VRM VBR VCL IRM IPP T VF Rd
Electrical characteristics (Tamb = 25 C)
Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Forward voltage drop Dynamic resistance
Slope = 1/Rd
I
IF
VCL VBR VRM IRM
VF V
IPP
Symbol VBR IRM Rt Rp Ct
Test conditions IR = 1 mA VRM = 3.3 V per line Tolerance 10% Tolerance 10% Tolerance 20%
Min. 6
Typ.
Max. 10 500
Unit V nA k pF
33 1.5 47
2/9
USBUF01P6
Technical information
2
Technical information
Figure 1. USB Standard requirements.
3.3V 1.5k
Rt
D+
Twisted pair shielded
D+
Rt Ct Rt
Full-speed or Low-speed USB Transceiver
Ct Rt
Full-speed USB Transceiver
DHost or Hub port
Ct 15k 15k
Zo = 90ohms 5m max
DCt
Hub 0 or Full-speed function
FULL SPEED CONNECTION
3.3V 1.5k
Rt
D+
Untwisted unshielded
D+
Rt Ct Rt
Full-speed or Low-speed USB Transceiver
Ct Rt
Low-speed USB Transceiver
DHost or Hub port
Ct 15k 15k
3m max
DCt
Hub 0 or Low-speed function
LOW SPEED CONNECTION
2.1
Application example
Figure 2. Implementation of ST solutions for USB ports.
USBDF01W5
Rt D+ in Ct Rd D+ out
Downstream port
Host/Hub USB por transceivert
USBUF01W6
D2 Gnd D1
Upstream port
D+
Peripheral transceiver
D+
D+
CABLE
D+
Ct Rt Ct Rt 3.3 V Rp
Gnd
Gnd Ct Rd D- in Rt D- out
D-
D-
DD3
3.3V
D4
D-
FULL SPEED CONNECTION
Downstream port
Host/Hub USB por transceivert
USBDF01W5
Rt D+ in Ct Rd D+ out
USBUF01W6
D2 Gnd D1
Upstream port
D+
Peripheral transceiver
D+
D+
CABLE
D+
Ct Rt Ct Rt 3.3 V Rp
Gnd
Gnd Ct Rd D- in Rt D- out
D-
D-
DD3
3.3V
D4
D-
LOW SPEED CONNECTION
3/9
Technical information
USBUF01P6
2.1.1
EMI filtering
Current FCC regulations requires that class B computing devices meet specified maximum levels for both radiated and conducted EMI.

Radiated EMI covers the frequency range from 30 MHz to 1GHz. Conducted EMI covers the 450 kHz to 30 MHz range.
For the types of devices utilizing the USB, the most difficult test to pass is usually the radiated EMI test. For this reason the USBUF01P6 device is aiming to minimize radiated EMI. The differential signal (D+ and D-) of the USB does not contribute significantly to radiated or conducted EMI because the magnetic field of both conductors cancels each other. The inside of the PC environment is very noisy and designers must minimize noise coupling from the different sources. D+ and D- must not be routed near high speed lines (clocks spikes). Induced common mode noise can be minimized by running pairs of USB signals parallel to each other and running grounded guard trace on each side of the signal pair from the USB controller to the USBUF device. If possible, locate the USBUF device physically near the USB connectors. Distance between the USB controller and the USB connector must be minimized. The 47 pF (Ct) capacitors are used to bypass high frequency energy to ground and for edge control, and are placed between the driver chip and the series termination resistors (Rt). Both Ct and Rt should be placed as close to the driver chip as is practicable. The USBUF01P6 ensures a filtering protection against electro-magnetic and radio frequency Interference thanks to its low-pass filter structure. This filter is characterized by the following parameters:

cut-off frequency insertion loss high frequency rejection. USBUF01P6 typical attenuation curve. Figure 4. Measurement configuration.
Figure 3.
0.00 dB -2.50 -5.00 -7.50 -10.00 -12.50 -15.00 -17.50 -20.00 -22.50 -25.00 1.0M
50
TEST BOARD
UUx
Vg
50
3.0M
10.0M
30.0M f/Hz
100.0M
300.0M
1.0G
3.0G
4/9
USBUF01P6
Technical information
2.1.2
ESD protection
In addition to the requirements of termination and EMC compatibility, computing devices are required to be tested for ESD susceptibility. This test is described in the IEC 61000-4-2 and is already in place in Europe. This test requires that a device tolerates ESD events and remains operational without user intervention. The USBUF01P6 is particularly optimized to perform ESD protection. ESD protection is based on the use of device which clamps at:
V CL = V BR + R d I PP
This protection function is splitted in 2 stages. As shown in Figure 5. the ESD strikes are clamped by the first stage S1 and then its remaining overvoltage is applied to the second stage through the resistor Rt. Such a configuration makes the output voltage very low at the output. Figure 5. USBUF01P6 ESD clamping behavior.
Rg
S1
Rt
S2
Rd
VPP
Vinput Voutput
Rd
Rload
VBR
VBR
Device to be protected
ESD Surge
USBUF01P6
Figure 6.
Measurement board.
ESD SURGE 15kV Air Discharge
TEST BOARD
U
Vin
Vout
To have a good approximation of the remaining voltages at both Vin and Vout stages, we give the typical dynamical resistance value Rd. By taking into account these following hypothesis : Rt>Rd, Rg>Rd and Rload>Rd, it gives these formulas:
R g V BR + R d V g Vinput = ---------------------------------------------Rg
R t V BR + R d Vinput Voutput = --------------------------------------------------------Rt
The results of the calculation done for Vg = 8 kV, Rg = 330 (IEC 61000-4-2 standard), VBR = 7 V (typ.) and Rd = 2 (typ.) give: Vinput = 55.48 V Voutput = 10.36 V
5/9
Technical information
USBUF01P6
This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this approximation the parasitic inductance effect was not taken into account. This could be few tenths of volts during few ns at the Vinput side. This parasitic effect is not present at the Voutput side due the low current involved after the resistance Rt. The measurements done hereafter show very clearly (Figure 7.a) the high efficiency of the ESD protection: - - no influence of the parasitic inductances on Voutput stage Voutput clamping voltage very close to VBR (breakdown voltage) in the positive way and -VF (forward voltage) in the negative way Remaining voltage at both stages S1 (Vinput) and S2 (Voutput) during ESD surge.
Figure 7.
a: Positive surge
b: Negative surge
Please note that the USBUF01P6 is not only acting for positive ESD surges but also for negative ones. For these kinds of disturbances it clamps close to ground voltage as shown in Figure 7.b.
6/9
USBUF01P6
Package information
3
Package information
Table 3. SOT-666 internal pad dimensions
Dimensions
b1 L1 L4
Ref.
Millimeters Min. Typ. Max. Min.
Inches Typ. Max. 0.024 0.007 0.013
A
L3 b D E1
0.45 0.08 0.17 0.19 1.50 1.50 1.10 0.50 0.19 0.10 0.10 0.60 0.27
0.60 0.018 0.18 0.003 0.34 0.007
A3 b b1 D
A L2 E A3
0.34 0.007 0.011 0.013 1.70 0.059 1.70 0.059 1.30 0.043 0.020 0.007 0.30 0.004 0.004 0.024 0.012 0.067 0.067 0.051
E E1 e L1 L2
e
L3 L4
Figure 8.
SOT-666 internal pad footprint (dimensions in mm)
0.30 0.50
0.99 0.21 0.62 1.40 2.60
0.20
7/9
Ordering information Table 4.
Lead plating Lead plating thickness Lead material Lead coplanarity Body material Flammability
USBUF01P6 Mechanical specifications
Tin-lead 5 m min 25 m max Sn (100% Sn) 10 m max Molded epoxy UL94V-0
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
4
Ordering information
Part Number USBUF01P6 Marking U Package SOT-666IP Weight 2.9 mg Base qty 3000 Delivery mode Tape and reel
5
Revision history
Date September-2003 01-Jun-2004 08-Jun-2005 10-Mar-2006 16-Aug-2006 29-Aug-2006 Revision 1 2 3 4 5 6 First issue. SOT-666 Internal Pad version package change. Minor format changes; no content changed. Footprint and dimension graphic improved in packaging information. Ecopack statement added. Reformatted to current standard. Updated SOT-666IP package dimensions in Table 3. Typing error in table 2 on page 2: change W and kW unit to and k unit. Description of Changes
8/9
USBUF01P6
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
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