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SUR3020 thru SUR3060 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 400 600 VRRM V 200 300 400 600 Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC IFSM TVJ=150oC TVJ=45oC I2t TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine SUR3020 SUR3030 SUR3040 SUR3060 Symbol IFRMS IFAVM IFRM Maximum Ratings 70 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 Unit A A A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 125 0.8...1.2 6 W Nm g SUR3020 thru SUR3060 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=37A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=350V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C o 35 10 50 11 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR3020 thru SUR3060 Ultra Fast Recovery Epitaxial Diodes F ig. 1 F orward current vers us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak forward voltage vers us diF /dt. F ig. 7 T rans ient thermal impedance junction to cas e. |
Price & Availability of SUR3040 |
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