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| SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. High Transition Frequency : fT=800MHz(Typ.). L KTC9018S EPITAXIAL PLANAR NPN TRANSISTOR E B L 2 3 1 P P N C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC * Tj Tstg 40 30 4 20 -20 350 150 -55 150 0.6 ) V V V mA mA mW 1. EMITTER 2. BASE 3. COLLECTOR K CHARACTERISTIC SYMBOL RATING UNIT M SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 Marking h FE Rank Lot No. Type Name BG ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain Note : hFE Classification F:54 80, G:72 SYMBOL ICBO IEBO hFE (Note) Cre fT CC rbb' NF Gpe 108, H:97 TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=6V, f=1MHz, IE=0 VCE=10V, IC=8mA, f=100MHz VCE=6V, IE=-1mA, f=30MHz VCE=6V, IE=-1mA, f=100MHz 146, I:130 198 MIN. 54 500 15 TYP. 800 MAX. 0.1 0.1 198 1.0 30 4.0 pF MHz pS dB UNIT A A 2003. 3. 25 Revision No : 1 J MAXIMUM RATING (Ta=25 ) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H D 1/3 KTC9018S STATIC CHARACTERISTICS COLLECTOR CURRENT I C (mA) 20 16 12 8 4 0 BASE-EMITTER VOLTAGE VBE (V) 0.2 0.4 0.6 0.8 600 VCE =6V VCE =6V 500 450 400 350 300 250 200 150 100 h FE - I C 300 DC CURRENT GAIN h FE COMMON EMITTER VCE =6V Ta=25 C 100 50 30 I B =50A 0 10 0.1 COMMON EMITTER Ta=25 C 0.3 0.5 1 3 5 10 20 COLLECTOR CURRENT I C (mA) 400 200 0 10 20 30 40 BASE CURRENT I B ( A) COLLECTOR-EMITTER VOLTAGE VCE (V) yfe , fe - I E FORWARD TRANSFER ADMITANCE yfe (m ) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fe ( ) -100 -50 -30 100 yfe 50 30 fe COMMON EMITTER VCE =6V f=100MHz Ta=25 C -10 -5 10 5 -0.2 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) C oe , g oe - I E 30 OUPUT CONDUCTANCE g oe ( ) 300 C ie , g ie - I E 30 INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (m ) OUPUT CAPACITANCE C oe (pF) 10 5 3 100 50 30 COMMON EMITTER VCE =6V f=100MHz Ta=25 C g oe C ie 10 5 3 g ie COMMON EMITTER VCE =6V f=100MHz Ta=25 C 1 0.5 10 5 -0.2 C oe 1 -0.3 -1 -3 -5 -10 -0.2 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) EMITTER CURRENT I E (mA) 2003. 3. 25 Revision No : 1 2/3 KTC9018S y oe - f OUTPUT SUSCEPTANCE b oe ( ) 2000 f=200MHz yfe - f FORWARD TRANSFER SUSCEPTANCE b fe (m ) 0 COMMON EMITTER VCE =6V I E =-1mA Ta=25 C f=10.7MHz 27 50 100 150 y re - f REVERSE TRANSFER SUSCEPTANCE b re ( ) 0 COMMON EMITTER VCE =6V y ie - f INPUT SUSCEPTANCE b ie (m ) f=10.7MHz 27 50 100 20 16 12 8 4 0 100 COMMON EMITTER VCE =6V 50 27 10.7 I E =-1mA Ta=25 C 150 f=200MHz -200 I E =-1mA Ta=25 C -400 150 -600 200 -800 -200 -160 -120 -80 -40 0 0 5 10 15 20 25 30 REVERSE TRANSFER CONDUCTANCE g re ( ) INPUT CONDUCTANCE g ie (m ) Pc - Ta COLLECTOR POWER DISSIPATION Pc (mW) 500 400 300 200 100 0 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 1 2 Ta=25 C 2 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 25 Revision No : 1 1600 1200 800 400 0 27 10.7 50 100 COMMON EMITTER VCE =6V I E =-1mA Ta=25 C 150 -10 -20 200 -30 -40 0 10 20 30 40 50 FORWARD TRANSFER CONDUCTANCE g fe (m ) 0 20 40 60 80 100 120 OUTPUT CONDUCTANCE g oe ( ) 3/3 |
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