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Transistor ISA2191AT2 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial transistor,It is designed for low frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. 1.210.1 0.790.1 0.250.02 JEITA BASE EMITTER COLLECTOR J I H F G OUTLINE DRAWING Unit 1.210.1 0.4 0.8 0.4 FEATURE Super-thin flat lead type package. t=0. 5mm Excellent linearly of DC forward current gain. Low collector to emitter saturation voltage APPLICATION For hybrid IC,small type machine low frequency voltage amplify application 0.50.03 MAXIMUM RATINGS(Ta=25) Symbol VCBO VEBO VCEO IC PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -6 -50 -150 125 125 -55125 Unit V V V mA mW A ISAHAYAT-USM TERMINAL CONNECTER MARKING Abbreviation for Kind hFE Item B C D E package mounted on 9x19x1mm glass-epoxy substrate. AF running No. GJ Month of manufacture Ta=25 Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E saturation voltage Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob IC=-100A, R V V V V CB Test conditions Min BE Limits Min 200 3.0 Min -0.1 -0.1 500 -0.3 - 0.110.02 VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA) Unit V A A V MHz pF = -50 150 90 - =-60V, I E=0mA EB=-6V, I C=0mA CE CE =-6V, I C=-1mA =-6V, I C=-100A IC=-100mA, I B=-10mA V V CE=-6V, I E=10mA CB Gain bandwidth product Collector output capacitance =-6V, I E=0A, f=1MHz It shows hFE classification in below table Item hFE E 150300 F 250500 ISAHAYA ELECTRONICS CORPORATION Transistor ISA2191AT2 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Collector dissipationAMBIENT TEMPERTURE -50 COMMON EMITTER OUTPUT IB=-0.25mA IB=-0.20mA IB=-0.15mA 200 -40 Collector dissipation Pc (mW) 150 COLLECTOR CURRENT IC(mA) IB=-0.10mA -30 100 -20 IB=-0.05mA 50 -10 Ta=25 VCE=-6V IB=-0mA 0 0 25 50 75 100 AMBIENT TEMPERTURETa () 125 150 -0 -0 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -10 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 10000 Ta=25 VCE=-6V GAIN BAND WIDTH PRODUCT fT(MHz) 250 Ta=25 VCE=-6V f=100MHz DC FORWARD CURRENT GAIN hFE 200 1000 150 100 100 50 10 -0.1 0 -1 -10 COLLECTOR CURRENT IC(mA) -100 1 10 EMITTER CURRENT IE(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COMMON EMITTER TRANSFER -50 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25 VCE=-6V -40 COLLECTOR CURRENT IC(A) 100 Ta=25 IE=0 f=1MHz 10 -30 -20 1 -10 -0 0.0 0.2 0.4 0.6 0.8 1.0 BASE TO EMITTER VOLTAGE VBE(V) 0 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Nov.2006 |
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