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 SEMiX 403GB128Ds
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R) 3s SPT IGBT Modules
SEMiX 403GB128Ds Module Preliminary Data Inverse Diode
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
GB
1
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 403GB128Ds
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMiX(R) 3s SPT IGBT Modules
Module SEMiX 403GB128Ds
Preliminary Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
2
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 403GB128Ds
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 403GB128Ds
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 403GB128Ds
5
20-04-2007 SCH
(c) by SEMIKRON


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