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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor,520MHz,30W
OUTLINE
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
7.2+/-0.5
High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.
2 3
R1.6
14.0+/-0.4
6.6+/-0.3
FEATURES
1
3.0+/-0.4
5.1+/-0.5
For output stage of high power amplifiers in UHF band mobile radio sets.
2.3+/-0.3
APPLICATION
2.8+/-0.3 0.10
PIN 1.Drain 2.Source 3.Gate UNIT:mm
RoHS COMPLIANT
RD30HUF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 75 7.5 7 175 -40 to +175 2.0 UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D1 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz,VDD=12.5V Pin=3W,Idq=1.0A VDD=15.2V,Po=30W(PinControl) f=520MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.2 30 50 LIMITS TYP MAX. 200 1 1.7 2.2 35 55 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD30HUF1
MITSUBISHI ELECTRIC 1/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 CHANNEL DISSIPATION Pch(W) 80
Silicon MOSFET Power Transistor,520MHz,30W
40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
60
0
1
2 3 Vgs(V)
4
5
Vds-Ids CHARACTERISTICS 10
Ta=+25C Vgs=5V
Vds VS. Ciss CHARACTERISTICS 140 120
Vgs=4.5V
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
100 Ciss(pF) 80 60 40 20 0 0
Ids(A)
Vgs=4V
Ta=+25C f=1MHz
Vgs=3.5V
Vgs=3V Vgs=2.5V
5
10 Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 16 14 12 Crss(pF) 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD30HUF1
MITSUBISHI ELECTRIC 2/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Pin-Po CHARACTERISTICS
RoHS Compliance, TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 40 30 20 10 0 10 20 Pin(dBm) 30 40
Ta=+25C f=520MHz Vdd=12.5V Idq=1.0A
Silicon MOSFET Power Transistor,520MHz,30W
100
Po
50
Po
100 80 60
d Ta=25C f=520MHz Vdd=12.5V Idq=1.0A
Po(dBm) , Gp(dB) , Idd(A)
80 Pout(W) , Idd(A)
40 30 20 10 0 0 2 4 Pin(W) 6 8
d(%)
Gp
40 20 0
40 20 0
Idd
Vdd-Po CHARACTERISTICS 50 40 30 20 10 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=3W Icq=1.0A Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2 10 8 6 4 2 0 10 8 6 4 2 0 1.5 2.5 3.5 Vgs(V) 4.5 Vds=10V Tc=-25~+75C -25C +25C
Po
Po(W)
Idd
RD30HUF1
Idd(A)
Ids(A)
+75C
MITSUBISHI ELECTRIC 3/7
10 Jan 2006
d(%)
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Vdd
RoHS Compliance, TEST CIRCUIT(f=520MHz)
Vgg C1
Silicon MOSFET Power Transistor,520MHz,30W
9.1kOHM 5pF 15pF 8.2kOHM 100OHM 7pF L1 520MHz RD30HUF1 L2 RF-OUT C2 5pF L3 C3
RF-IN 56pF
56pF
15pF 15pF 15pF 5 10 12 90 100
15pF 5pF 7pF 15pF 5 8 14 90 100 Note:Board material-Teflon substrate
8 4.8 10.8
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:3Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
RD30HUF1
MITSUBISHI ELECTRIC 4/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
RoHS Compliance,
Silicon MOSFET Power Transistor,520MHz,30W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zin f=480MHz Zin
f=520MHz Zout
f=480MHz Zout f=440MHz Zout
f=440MHz Zin
Zo=10
Zin , Zout F (MHz) 440 480 520 Zin (ohm) 1.16-j0.14 0.90+j0.35 0.88+j0.84 Zout (ohm) 1.17+j0.74 1.15+j1.07 1.47+j1.24 Conditions Po=40W, Vdd=12.5V,Pin=3.0W Po=38W, Vdd=12.5V,Pin=3.0W Po=35W, Vdd=12.5V,Pin=3.0W
RD30HUF1
MITSUBISHI ELECTRIC 5/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
S12 S22 (ang) -8.8 -18.0 -23.7 -27.9 -31.1 -31.3 -29.2 -21.8 -9.5 -3.9 7.5 28.3 46.8 53.0 56.5 63.6 64.1 63.5 65.6 65.3 64.6 64.8 (mag) 0.723 0.748 0.778 0.817 0.832 0.857 0.879 0.887 0.901 0.908 0.913 0.916 0.928 0.932 0.936 0.942 0.945 0.946 0.952 0.955 0.955 0.957 (ang) -170.2 -172.5 -173.9 -175.6 -177.6 -179.7 178.3 176.3 174.2 173.4 172.3 170.5 168.6 166.7 164.9 163.1 161.6 160.0 158.2 157.0 155.4 153.6 (mag) 0.016 0.015 0.013 0.011 0.010 0.008 0.007 0.005 0.004 0.004 0.004 0.004 0.004 0.006 0.007 0.007 0.009 0.009 0.010 0.012 0.012 0.014
RoHS Compliance,
Silicon MOSFET Power Transistor,520MHz,30W
RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.870 0.880 0.890 0.902 0.911 0.921 0.930 0.931 0.941 0.946 0.946 0.947 0.951 0.957 0.960 0.962 0.962 0.962 0.961 0.961 0.965 0.964 (ang) -173.4 -177.3 -179.5 178.2 176.0 174.1 172.1 170.0 168.0 167.1 166.3 164.2 162.5 160.7 159.1 157.6 155.8 154.2 152.7 151.2 149.6 148.2 (mag) 7.566 4.825 3.398 2.568 1.982 1.588 1.299 1.070 0.907 0.852 0.780 0.673 0.589 0.522 0.464 0.419 0.383 0.341 0.318 0.296 0.270 0.259 S21 (ang) 74.2 63.2 55.1 47.0 40.2 34.5 29.0 23.9 20.3 18.7 15.9 12.5 10.1 6.6 4.1 2.2 -1.2 -3.0 -4.2 -7.4 -8.3 -9.4
RD30HUF1
MITSUBISHI ELECTRIC 6/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
RoHS Compliance,
Silicon MOSFET Power Transistor,520MHz,30W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD30HUF1
MITSUBISHI ELECTRIC 7/7
10 Jan 2006

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