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 CdS Photoconductive Photocells PDV-P9002-1
PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm]
.010 [0.25] .138 [3.50] +.015 [0.38] -.010 [0.25] .079 [2.00]
EPOXY ON LEADS 3 mm MAX 2X O.016 [0.40]
.100 [2.54]
.010 [0.25] O.165 [4.19]
PLASTIC COATED
2X 1.023 [26.0]
CERAMIC PACKAGE
FEATURES
* Visible light response * Sintered construction * Low cost
DESCRIPTION
APPLICATIONS
The PDV-P9002-1 are (CdS), Photoconductive * Camera exposure photocells designed to sense light from 400 to 700 * Shutter controls nm. These light dependent resistors are available in * Night light Controls a wide range of resistance values. They're packaged in a two leaded plastic-coated ceramic header. CELL RESISTANCE VS. ILLUMINANCE
1000
ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED
SYMBOL Vpk Pd po/t TO TS PARAMETER Applied Voltage Continuous Power Dissipation Operating and Storage Temperature Soldering Temperature* -30 MIN MAX 150 90 +75 +260 UNITS V mW/C C C
Resistance in Kohms
100
10
1 1 10 Illum inance in lux 100
* 0.200 inch from base for 3 seconds with heat sink.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C UNLESS OTHERWISE NOTED
SYMBOL RD RI S lrange lpeak tr Tf CHARACTERISTIC Dark Resistance Illuminated Resistance TEST CONDITIONS MIN 0.5 11 0.7 400 520 60 25 700 TYP MAX 20 After 10 sec. @ 10 Lux @ 2856 K 10 Lux @ 2856 K LOG(R100)-LOG(R10)** Sensitivity LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 K Fall Time After 10 Lux @ 2856 K UNITS MW KW W/Lux nm nm ms ms
**R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 K respectively.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 3/30/06


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