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| NJG1130KA1 GPS LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GPS application at the 1.575GHz. The LNA offers excellent low noise figure, high linearity and low current consumption. Two stage amplifier and ESD protection circuit are integrated in the IC to achieve very high gain and high ESD tolerance. An ultra-small and ultra-thin package of FLP6-A1 is adopted. ! FEATURES " Low voltage operation " Low current consumption " High gain " Low noise figure " 1dB gain compression output power " High output IP3 " Ultra-small & ultra-thin package ! PIN CONFIGURATION ! PACKAGE OUTLINE NJG1130KA1 +2.85V typ. 5.0mA typ. 29.0dB typ. @ f=1.575GHz 0.65dB typ. @ f=1.575GHz +11.0dBm typ. @ f=1.575GHz +14dBm typ. @ f=1.575+1.5751GHz, Pin=-35dBm FLP6-A1 (Package size: 1.6x1.6x0.6mm) (Top View) Pin Connection 4 AMP 3 1. 2. 3. 4. 5. 6. RF OUT GND VDD RF IN GND GND 5 2 6 AMP 1 Package Orientation Mark Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2007-06-13 -1- NJG1130KA1 ! ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50ohm PARAMETERS Drain Voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD Pin PD Topr Tstg VDD=2.85V on PCB board, at Tjmax=150C CONDITIONS RATINGS 5.0 +15 170 -40~+85 -55~+150 UNITS V dBm mW C C ! ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: VDD=2.85V, freq=1.575GHz, Ta=+25C, Zs=Zl=50ohm, with application circuit PARAMETERS Operating voltage Operating current Small signal gain Noise figure 1dB gain compression output power 3rd order output intercept point RF IN VSWR RF OUT VSWR SYMBOL VDD IDD Gain NF P-1dB(out) OIP3 VSWRi VSWRo f=1.575+1.5751GHz, Pin=-35dBm Exclude PCB & connector losses (0.10dB) RF OFF CONDITIONS MIN 2.5 26.0 +5.0 +7.0 TYP 2.85 5.0 29.0 0.65 +11.0 +14.0 2.4 1.6 MAX 3.3 8.5 31.5 0.95 2.8 2.0 UNITS V mA dB dB dBm dBm -2- NJG1130KA1 ! ELECTRICAL CHARACTERISTICS (Condition :Ta=+25,VDD=2.85V,Zs=Zl=50ohm with application circuit) Pout vs. Pin 25 20 P-1dBout=+12.0dBm 15 25 (f=1575MHz) 30 Gain, IDD vs. Pin (f=1575MHz) 40 Gain 30 Pout (dBm) 5 0 Pout -5 -10 -15 -40 Gain 1dB Compression Line 20 20 15 IDD P-1dBin=-16.0dBm 10 P-1dBin=-16.0dBm -30 -20 -10 0 10 -40 0 -30 -20 -10 0 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin 40 (f1=1575MHz, f2=f1+100kHz) 17 16 OIP3, IIP3 vs. frequency (f1=1550~1600MHz, f2=f1+100kHz, Pin=-35dBm) -8 -9 OIP3 15 -10 -11 -12 -13 IIP3 -14 -15 -16 1600 OIP3=+15.4dBm 20 Pout, IM3 (dBm) OIP3 (dBm) 14 13 12 11 10 Pout -20 -40 IM3 -60 IIP3=-13.4dBm -80 -40 -30 -20 -10 0 9 1550 1560 1570 1580 1590 Pin (dBm) frequency (MHz) NF, Gain vs. frequency 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 (NF: Exclude PCB & Connector Losses) (f=1550~1600MHz) 31 30 29 Gain 27 26 NF 25 24 23 1600 0.0 1550 1560 1570 1580 1590 frequency (MHz) Gain (dB) NF (dB) 28 IIP3 (dBm) 0 IDD (mA) 10 Gain (dB) -3- NJG1130KA1 ! ELECTRICAL CHARACTERISTICS (Condition :Ta=+25,Zs=Zl=50ohm with application circuit) Gain, NF vs. VDD 32 31 30 (f=1575MHz) 4.0 3.5 3.0 2.5 Gain 2.0 1.5 1.0 0.5 0.0 3.4 15.0 14.0 P-1dB(OUT) vs. VDD (f=1575MHz) P-1dB(OUT) (dBm) P-1dB(OUT) 13.0 12.0 11.0 10.0 9.0 8.0 2.4 Gain (dB) 28 27 26 25 24 2.4 NF NF (dB) 29 2.6 2.8 3.0 3.2 2.6 2.8 3.0 3.2 3.4 VDD (V) VDD (V) OIP3, IIP3 vs. VDD 20 18 16 OIP3 (f1=1575MHz, f2=f1+100kHz, Pin=-35dBm) -2 -4 -6 -8 -10 -12 IIP3 8 6 4 2.4 -14 -16 -18 3.4 1.0 0.5 0.0 2.4 4.0 3.5 3.0 VSWRi, VSWRo vs. VDD (f=1575MHz) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3.4 OIP3 (dBm) VSWRi 12 10 2.0 1.5 VSWRi 2.6 2.8 3.0 3.2 2.6 2.8 3.0 3.2 VDD (V) VDD (V) IDD vs. VDD 10 9 8 (RF OFF) IDD (mA) 7 6 IDD 5 4 3 2.4 2.6 2.8 3.0 3.2 3.4 VDD (V) -4- VSWRo 14 IIP3 (dBm) 2.5 VSWRo NJG1130KA1 ! ELECTRICAL CHARACTERISTICS (Condition :VDD=2.85V,Zs=Zl=50ohm with application circuit) Gain, NF vs. Temperature 32 31 30 (f=1575MHz) 4.0 3.5 20 18 P-1dB(OUT) vs. Temperature (f=1575MHz) Gain P-1dB(OUT) (dBm) 3.0 2.5 2.0 1.5 1.0 NF 0.5 0.0 100 16 14 12 10 8 6 -40 P-1dB(OUT) Gain (dB) 28 27 26 25 24 -40 NF (dB) 29 -20 0 20 40 o 60 80 -20 0 20 40 60 80 100 Temperature ( C) Temperature ( oC) OIP3, IIP3 vs. Temperature 19 (f1=1575MHz, f2=f1+100kHz, Pin=-35dBm) -12 VSWRi, VSWRo vs. Temperature 4.0 3.5 (f=1575MHz) 18 IIP3 -13 3.0 OIP3 (dBm) IIP3 (dBm) 17 -14 VSWRi, VSWRo VSWRi 2.5 2.0 1.5 VSWRo 1.0 16 OIP3 15 -15 -16 14 -17 0.5 0.0 -40 13 -40 -20 0 Temperature ( oC) 20 40 60 80 -18 100 -20 0 Temperature (oC) 20 40 60 80 100 IDD vs. Temperature 10 (RF OFF) k-factor vs. Temperature 20 (f=100MHz~20GHz) 8 15 IDD (mA) 6 k-factor IDD 10 -40oC -20oC 0oC +25oC +50oC +85oC 4 5 2 0 -40 -20 0 20 40 o 60 80 100 0 0 5 10 15 20 Temperature ( C) frequency (GHz) -5- NJG1130KA1 ! ELECTRICAL CHARACTERISTICS (Condition :Ta=+25,VDD=2.85V,Zs=Zl=50ohm with application circuit) S11, S22 Zin, Zout VSWR S21, S12 S11, S22 (~20GHz) S21, S12 (~20GHz) -6- NJG1130KA1 ! APPLICATION CIRCUIT (Top View) L1 8.2nH L3 6.8nH RFIN L2 18nH 4 AMP 3 C2 1000pF VDD 5 2 C3 1000pF L4 33nH C1 100pF 6 AMP 1 R1 10ohm RFOUT NOTES: L1 and L2 form the input matching circuit. The LNA has integrated coupling and DC-blocking capacitor at the input. L3 is a matching inductor of the integrated 1st amplifier and 2nd amplifier. It should be connected to the terminal3 as close as possible. L4 is an output matching inductor. C1 is a coupling and DC-blocking capacitor at the output. C2 and C3 are bypass capacitors. They should be connected between L3 and L4. C2 should be placed to the side of L3, and C3 should be placed to the side of L4, and should not be directly connected L3 and L4. R1 is a stability resistor at high frequency, and it should be connected to the terminal1. Ground terminal (No.2, 5, 6) should be connected to the ground plane as close as possible for good RF performance. For good performance, the terminal1,3 and 4 should not be coupled though floating-capacitance which exists between RF transmission lines. -7- NJG1130KA1 TEST PCB LAYOUT (Top View) Parts List Parts ID Commment TAIYO-YUDEN HK1005 Series MURATA GRM15 Series 1005 Size VDD C2 C3 L4 R1 C1 L1L4 C1C3 RF IN L2 L1 L3 RF OUT R1 PCB (FR-4) t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50) PCB SIZE =17.0mmx17.0mm C1 Terminal3 L2 L1 Terminal4 L3 R1 Terminal1 Ground plane PRECAUTION: [1] For good performance, the terminal1, 3 and 4 should not be coupled though floating-capacitance which exists between RF transmission lines. [2] In order not to couple with terminal 1, 3 and 4, please layout ground pattern under the IC. [3] C2 should be placed to the side of L3, and C3 should be placed the side of L4. They should be connect between L3 and L4, should not be directly connected L3 and L4. -8- NJG1130KA1 ! TEST CIRCUITS Test Circuits 1 to 3 define the test conditions used in the product electrical characteristics table. VDD=2.85V RF Input DUT RF Output Port1 Port2 Network Analyzer Test Circuit 1. S-Parameter VDD=2.85V RF Input DUT RF Output Output Input Noise Source NF Analyzer Test Circuit 2. NF VDD=2.85V Signal Generator Isolator RF Input ATT: 6dB Power Comb. Isolator DUT RF Output ATT: 20dB Spectrum Analyzer Signal Generator Test Circuit 3. Third order output intercept point -9- NJG1130KA1 ! PACKAGE OUTLINE ( FLP6-A1 ) 0.6max. (0 . 2 ) 1.6 0.1 6 5 4 0.1 30.05 1.60.05 1.20.05 1 ( 0 .2 ) 2 (0.50) (0.50 ) 3 0.220.05 (0 . 0 1 ) (0 . 3 ) (0 . 3 ) UNIT: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 10 - |
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