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BAT85
Small-Signal Diode Schottky Diode
Features
For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type designation BAS85.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter Continuous reverse voltage Forward continuous current at Tamb=25oC Peak forward current at Tamb=25oC Surge forward current at tp<1s, Tamb=25 C Power dissipation at Tamb=65 C Thermal resistance junction to ambient air Maximum junction temperature Ambient operating temperature range Storage temperature range
o o
Symbol VR IF IFM IFSM Ptot RJA Tj TA TS
Value 30 200 300 600 200 0.43
(1)
Unit Volts mA mA mA mW
o
(1)
(1)
(1)
(1)
C/W
o
125 -65 to +125 -65 to +150
C C C
o
o
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter Reverse breakdown voltage Leakage current
Symbol V(BR)R IR
Test Condition IR=10uA (pulsed) VR=25V IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=1V, f=1MHz IF=10mA, IR=10mA, to IR=1mA
Min. 30 -
Typ. 0.5 -
Max. 2 0.24 0.32 0.4 0.8 10 5
Unit Volts uA
Forward voltage pulse test tp<300us, <2%
VF
Volt
Capacitance Reverse recovery time
Notes:
Ctot trr
pF ns
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
675
RATINGS AND CHARACTERISTIC CURVES
676

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