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| NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P7502CMG SOT-23 Lead-Free D PRODUCT SUMMARY V(BR)DSS 20 RDS(ON) 75m ID 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VGS LIMITS 12 3 2 20 0.6 0.5 -55 to 150 275 UNITS V TC = 25 C TC = 100 C ID IDM A TC = 25 C TC = 100 C PD Tj, Tstg TL W Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 C SYMBOL RJC RJA TYPICAL MAXIMUM 65 230 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 12V VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125 C VDS = 10V, VGS = 10V VGS = 2.5V, ID = 1.5A VGS = 4.5V, ID = 3A VDS = 15V, ID = 3A 3 70 50 16 105 75 20 0.45 0.75 1.2 100 nA 1 10 A A m S V LIMITS UNIT MIN TYP MAX 1 AUG-04-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P7502CMG SOT-23 Lead-Free DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 Ciss Coss Crss Qg Qgs Qgd 2 450 VGS = 0V, VDS = 15V, f = 1MHz 200 60 15 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3A 2.0 7.0 6.0 VDS = 15V, ID 1A, VGS = 10V, RGS = 2.5 6.0 20 5.0 nS nC pF Gate-Source Charge Gate-Drain Charge Rise Time2 Turn-Off Delay Time Fall Time2 2 Turn-On Delay Time td(on) tr 2 td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 1 2 3 IS ISM VSD IF = IS, VGS = 0V 2.3 4.6 1.5 A V Forward Voltage1 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "11YWW", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name 2 AUG-04-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P7502CMG SOT-23 Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 VGS= 0V 10 Is - Reverse Drain Current(A) T = 125 C 1 0.1 25 C -55 C 0.01 0.001 0.0001 0 0.2 0.4 0.8 0.6 VSD - Body Diode Forward Voltage(V) 1.0 1.2 3 AUG-04-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P7502CMG SOT-23 Lead-Free 4 AUG-04-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P7502CMG SOT-23 Lead-Free SOT-23 (M3) MECHANICAL DATA mm Dimension Min. A B C D E F G 2.60 1.40 2.70 1.00 0.00 0.35 0.4 Typ. 0.95 2.80 1.60 2.90 1.10 3.00 1.80 3.10 1.30 0.10 0.5 Max. H I J K L M N Dimension Min. 0.10 0.37 Typ. 0.15 Max. 0.25 mm H 2 C 1 A 3 B I D E F G 5 AUG-04-2004 |
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