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  Datasheet File OCR Text:
 Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
SOT-323
MMST5401
FEATURES Power dissipation PCM:
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
1. 25 A0. 05
1. 01 R EF
0.2
W (Tamb=25)
2. 30 A0. 05
Collector current -0.2 A ICM: Collector-base voltage -160 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) VCE(sat) Collector-emitter saturation voltage VCE(sat) VBE(sat) Base-emitter voltage VBE(sat) Transition frequency Collector output capacitance IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-5V, Ic=-0.2mA, f=1KHZ, Rg=10 IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA
1. 30 A0. 03
Unit: mm
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-100A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA
-160 -150 -5 -50 -50 50 60 50 -0.2 -0.5 -1 -1
100 300 6
0. 30
2. 00 A0. 05
nA nA
240
V V V V MHz pF
fT
Cob NF
Noise figure
8
dB
Marking
K4M


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