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PD-97179A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level RDS(on) ID IRHNM597110 100K Rads (Si) 1.2 -3.1A IRHNM593110 300K Rads (Si) 1.2 -3.1A
IRHNM597110 100V, P-CHANNEL
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TECHNOLOGY
SMD-0.2
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID@ VGS = -12V, TC = 25C ID@ VGS = -12V, TC =100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -3.1 -2.0 -12.4 23 0.18 20 28 -3.1 2.3 -21 -55 to 150 300 (for 5s) 0.25 (Typical)
Pre-Irradiation
Units
A W
W/C
V mJ A mJ V/ns C g
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12/20/07
IRHNM597110
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-100
Typ Max Units
-- -0.13 -- -- 4.88 -- -- -- -- -- -- -- -- -- -- -- -- 6.8 379 98 9.5 24 -- -- 1.2 -4.0 -- -- -10 -25 -100 100 11 3.0 4.0 18 26 12 12 -- -- -- -- V V/C V mV/C S A nA
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -2.0A A VDS = VGS, ID = -1.0mA V DS = -15V, IDS = -2.0A A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -3.1A VDS = -50V VDD = -50V, ID = -3.1A, VGS = -12V, RG = 7.5
BV DSS /TJ Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 -- VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 1.9 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss Coss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance -- -- -- -- -- -- -- -- -- -- -- -- --
nC
ns
nH
pF
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 100KHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -3.1 -12.4 -5.0 100 271 A V ns nC
Test Conditions
T j = 25C, IS = -3.1A, VGS = 0V A Tj = 25C, IF = -3.1A, di/dt -100A/s VDD -50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 5.4
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNM597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-0.2) Diode Forward Voltage A 100K Rads(Si)1 Min Max -100 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.916 1.2 -5.0 300KRads(Si)2 Min Max -100 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.936 1.2 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS= -80V, VGS = 0V VGS = -12V, ID = -2.0A VGS = -12V, ID = -2.0A VGS = 0V, IS = -3.1A
1. Part number IRHNM597110 2. Part number IRHNM593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm )) Br I Au 37.3 59.9 82.3
2
Energy
(MeV) 285 344 351
Range
(m) 36.8 32.7 28.5
@VGS= @VGS= @VGS=
VDS (V)
@VGS= @VGS= @VGS=
0V -100 -100 -100
5V -100 -100 -100
10V -100 -100 -100
15V -100 -100 -30
17.5V -100 -75 -
20V -100 -25 -
-120 -100 -80 -60 -40 -20 0 0 5 10 VGS 15 20
VDS
Br I Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNM597110
Pre-Irradiation
100
-I D, Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -8.0V -6.0V -5.0V -4.5V BOTTOM -4.0V
100
TOP VGS -15V -12V -10V -8.0V -6.0V -5.0V -4.5V -4.0V
10
-I D, Drain-to-Source Current (A)
10
BOTTOM
1
-4.0V
1
-4.0V
20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
2.5
ID = -3.1A
2.0
-I D, Drain-to-Source Current (A)
10 T J = 150C
(Normalized)
T J = 25C
1.5
1.0
0.5
VDS = -50V 15 20s PULSE WIDTH 1 4 6 8 10 12 14 16 -VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNM597110
RDS(on), Drain-to -Source On Resistance ( )
6 5 4 3 2 1 T J = 25C 0 4 6 8 10 T J = 150C
ID = -3.1A
RDS(on), Drain-to -Source On Resistance ( )
7
4
3
T J = 150C
2
T J = 25C
1 Vgs = -12V 0 0 2 4 6 -I D, Drain Current (A)
12
14
16
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
150
4
140
-V GS(th) Gate threshold Voltage (V)
ID = -1.0mA
3
130
2
120
1
110
ID = -50A ID = -250A ID = -1.0mA ID = -150mA
100 -60 -40 -20 0 20 40 60 80 100 120 140 160
0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
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IRHNM597110
Pre-Irradiation
600
500
-VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -3.1A 16
VDS= -80V VDS= -50V VDS= -20V
C, Capacitance (pF)
400
Ciss
12
300
200
Coss
8
100
4 FOR TEST CIRCUIT SEE FIGURE 17 0 0 2 4 6 8 10 12
0 1
Crss
10 100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
3.5 3
-I D, Drain Current (A)
5 6
-I SD , Reverse Drain Current (A)
10
2.5 2 1.5 1 0.5 0
1 TJ = 150C 0.1 VGS = 0V 0.01 0 1 2 3 4 -V SD , Source-to-Drain Voltage (V) T J = 25C
25
50
75
100
125
150
T C , Case Temperature (C)
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
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Pre-Irradiation
IRHNM597110
100
EAS , Single Pulse Avalanche Energy (mJ)
50
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 10
40
ID -1.4A -2.0A BOTTOM -3.1A TOP
30
100s
1
20
1ms
Tc = 25C Tj = 150C Single Pulse 1 10 100
10
10ms
1000
0.1
0 25 50 75 100 125 150
-VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response ( Z thJC )
D = 0.50 0.20 0.10
1
P DM t1 t2
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHNM597110
Pre-Irradiation
VDS
L
I AS
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
VGS -20V
tp
0.01
15V
tp V(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
-12 V
QGS VG
QG QGD
50K
-12V 12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
V DS V GS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
td(on) tr t d(off) tf
VGS
D.U.T.
+
10%
V DD
90% VDS
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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+
D.U.T.
-
VDS
-
Pre-Irradiation
IRHNM597110
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -50V, starting TJ = 25C, L=5.8 mH Peak IL = -3.1A, VGS = -12V A ISD -3.1A, di/dt -544A/s, VDD -100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.2
NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2007
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