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| CHA7114 X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25 m power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * The backside of the chip is both RF and DC grounded * Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process. Vg1 Vd1 IN OUT Vg1 Vd1 Vg2 Vd2 50 Pout (dBm) & PAE (%) & Gain (dB) 45 40 35 30 25 20 15 Pulse : 25s 10% 10 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Linear Gain Pout @ 4dBc PAE @ 4dBc Main Features 0.25m Power pHEMT Technology 8.5-11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25 (Tamb is the back-side of the chip) C Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25s, Duty cycle = 10% Symbol Top Fop P_4dBc G Parameter Operating temperature range Operating frequency range Output power @ 4dBc @ 25 C Small signal gain @ 25 C Min -40 8.5 Typ Max +80 11.5 Unit C GHz W dB 8 20 ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA7114-7347 - 13 Dec 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09 CHA7114 Electrical Characteristics X-band High Power Amplifier Tamb = 25 Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25s, Duty cycle=10% C, Parameter Min Typ Max Unit Fop Operating frequency 8.5 11.5 GHz G Small signal gain 17.5 20 23 dB G_T Small signal gain variation versus -0.033 dB/ C temperature RLin Input Return Loss 8 10 dB RLout Output Return Loss 6 8 dB Psat Saturated output power 39.8 dBm Psat_T Saturated output power variation -0.008 dB/ C versus temperature P_4dBc Output power @ 4dBc (2) 38 39 dBm PAE_4dBc Power Added Efficiency @ 4dBc 36 42 % Id Supply drain current 2.3 2.6 A Vd1, Vd2 Drain supply voltage (2) 8.0 8.5 V Id_q Supply quiescent drain current (1) 2.0 A Vg1, Vg2 Gate Power supply voltage -4.0 V Top Operating temperature range -40 +80 C (1) Parameter to be adjusted by tuning of Vg (2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on robustness see Maximum ratings) Symbol Absolute Maximum Ratings (1) Tamb = 25 C Symbol Cmp Vd Id Id_sat Vg Tj Tstg (1) Parameter Compression level (2) Drain Power supply voltage (3) Drain Power supply quiescent current Drain Power supply current in saturation Gate Power supply voltage Maximum junction temperature (4) Storage temperature range Values 6 10 2.5 3 -8 175 -55 to +125 Unit dB V A A V C C Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5 V / dBc (3) Without RF input power (4) Equivalent Thermal Resistance to Backside: 5.6C/W for backside temp. of 80 C. [ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power) Where ETRB stands for Equivalent Thermal Resistance to Backside. ] Ref. : DSCHA7114-7347 - 13 Dec 07 2/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 X band High Power Amplifier Typical measured characteristics Measurements on Jig: CHA7114 Vd = 8V, Vg = -4.0V, Id (Quiescent) = 2.2A, Pulse width = 25s, Duty cycle = 10% 30 28 26 Linear gain (dB) 24 22 20 18 16 14 12 10 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Linear gain versus frequency and temperature -40 C 80 C 20 C 42 41 40 39 Pout (dBm) 38 37 36 35 34 33 32 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Output Power @ 4dBc versus frequency and temperature -40 C 80 C 20 C Ref : DSCHA7114-7347 - 13 Dec 07 3/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA7114 50 48 46 44 PAE (%) 42 40 38 36 -40 C 34 32 30 8 8,5 9 9,5 10 80 C 20 C X-band High Power Amplifier 10,5 11 11,5 12 Frequency (GHz) PAE @ 4dBc versus frequency and temperature 4 3,5 3 2,5 Id (A) 2 -40 C 1,5 1 0,5 0 8 8,5 80C 20C 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Id @ 4dBc versus frequency and temperature Ref. : DSCHA7114-7347 - 13 Dec 07 4/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 X band High Power Amplifier CHA7114 41 39 37 Pout (dBm) 35 33 31 29 27 25 -1 0 1 2 3 4 5 6 7 8 9 Compression (dB) 8GHz 8.4GHz 8.8GHz 9.2GHz 9.6GHz 10GHz 10.4GHz 10.8GHz 11.2GHz 11.6GHz 12GHz Output Power @ 25 versus compression and frequenc y C 60 50 40 PAE (%) 30 20 10 0 -1 0 1 2 3 4 5 6 Compression (dB) PAE @ 25 versus compression and frequency C 8GHz 8.4GHz 8.8GHz 9.2GHz 9.6GHz 10GHz 10.4GHz 10.8GHz 11.2GHz 11.6GHz 12GHz 7 8 9 Ref : DSCHA7114-7347 - 13 Dec 07 5/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA7114 X-band High Power Amplifier 16 15 14 13 12 11 1 2 10 9 34 567 8 Chip Mechanical Data and Pin references Chip width and length are given with a tolerance of +/- 35m Chip thickness = 70m +/- 10m HF pads (1, 10) = 118m x 196m DC pads (3, 4, 5, 6, 7, 12, 13, 14, 15, 16) = 96m x 96m DC pads (8, 11) = 186m x 96 m Pin number 2, 9 3, 7, 12, 16 1 4, 6, 13, 15 5, 8, 11, 14 10 Pin name G1, G2 IN Vg1R, Vg2R Vd1, Vd2 OUT Description Not Connected Not Connected Input RF port Vg: Negative supply voltage (through divided bridge Network) Vd: Positive supply voltage Output RF port Ref. : DSCHA7114-7347 - 13 Dec 07 6/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 X band High Power Amplifier Bonding recommendations Port IN OUT Vd1, Vd2 Vg1R, Vg2R CHA7114 Connection Inductance (Lbonding) = 0.3nH 2 gold wires bondings (550 m max) Inductance (Lbonding) = 0.3nH 2 gold wires bondings (550 m max) Inductance 1nH Inductance 1nH External capacitor C1 ~ 100pF C1 ~ 100pF C2 ~ 10nF Assembly recommendations (drain voltage pulsed mode operation) Vg Vd IN OUT Vg Vd C1=100pF C2=10nF Vg: gate supply voltage Vd: drain supply voltage Ref : DSCHA7114-7347 - 13 Dec 07 7/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA7114 X-band High Power Amplifier Ordering Information Chip form: CHA7114-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHA7114-7347 - 13 Dec 07 8/8 Specifications subject to change without notice Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 |
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