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CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -the backside of the chip is both RF and DC grounded -bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Pout & PAE@3dBc , Linear Gain
TI Vc
TO
Vctrl
Biasing Circuit
Vc Vc
TTL Circuit
IN
OUT
TTL Circuit
Biasing Circuit
TI Vc
TO
Vctrl Vc
Vc
44
PAE @ 3dBc (%)
40 36 32 28
Main Features
Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm
Pout (dBm
@
3dBc
Linear Gain (Pin=0dBm)
24 20 1 6 9 9.2 9.4 9.6 9.8 1 0 1 0.2 1 0.4 1 0.6
Main Characteristics
Pout & PAE @3dBc and Linear Gain (Temperature 25C)
Frequency ( G z) H
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100s, Duty cycle = 20% Symbol Parameter Min Typ Fop Psat P_3dBc G
Top
Max 10.4
Unit GHz W W dB C
Operating frequency range Saturated output power @ 25 C Output power @ 3dBc @ 25 C Small signal gain @ 25 C Operating temperature range
9.2 9 7 20 -40
+80
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70127235 - 23 Aug 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
Electrical Characteristics
X-band High Power Amplifier
Tamb = 20 Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100s, Duty cycle = 20% C, Parameter Min Typ Operating frequency 9.2 G Small signal gain 17.5 20 G_T Small signal gain variation versus -0.025 temperature RLin Input Return Loss 8 10 RLout Output Return Loss 8 12 Psat Saturated output power 39.5 Psat_T Saturated output power variation versus -0.01 temperature P_3dBc Output power @ 3dBc (3) 38 38.5 PAE_3dBc Power Added Efficiency @ 3dBc 34 38 Vc Power supply voltage (3) 7.5 Ic Power supply quiescent current (1) 1.9 TI TTL input voltage 0 I_TI TTL input current 1 Vctrl Collector control voltage 5 Zctr Vctrl input port impedance (2) 350 Top Operating temperature range -40 (1) Parameter tunable by Vctrl when control biasing circuit used. (2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18) (3) 0.5V variation on Vc leads to around 0.4dB variation of the output power robustness see Maximum ratings)
Fop
Symbol
Max 10.4 23
Unit GHz dB dB/ C dB dB dBm dB/ C dBm % V A V mA V Ohm C
8 5
+80
(impact on
Absolute Maximum Ratings (1)
Tamb = 20 C Symbol Cmp Vc Ic Ic_sat Vctrl Tj Tstg (1) Parameter Compression level (2) Power supply voltage with RF Power supply quiescent current Power supply current in saturation Collector current control voltage Maximum junction temperature Storage temperature range Values 6 8 2.8 3.5 6.5 175 -55 to +125 Unit dBc V A A V C C
Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vc using the rate 0.5 V / dBc Equivalent Thermal resistance to Backside: 6 C/W
Ref. : DSCHA70127235 - 23 Aug 07 2/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
Measurements on Jig:
CHA7012
Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100s , Duty cycle = 20%
30 28 26 Linear gain (dB) 24 22 20 18 16 14 12 10 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz)
Linear gain versus frequency and temperature
+20 C +80 C -40 C
42 41 40 39 Pout (dBm) 38 37 36 35 34 33 32 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz)
+20C +80C -40 C
Output Power @ 3dBc versus frequency and temperature
Ref. : DSCHA70127235 - 23 Aug 07
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
50 45 40 PAE (%) 35 30 25 20 8.5 8.7 8.9 9.1 9.3 9.5 9.7
+20C +80C -40 C
X-band High Power Amplifier
9.9
10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
PAE @ 3dBc versus frequency and temperature
3 2.9 2.8 2.7 Ic (A) 2.6 2.5 2.4 2.3 2.2 2.1 2 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz)
Ic @ 3dBc versus frequency and temperature
+20 C +80 C -40 C
Ref. : DSCHA70127235 - 23 Aug 07
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7012
40 38 36 Pout (dB) 34 32 30 28 26 -1 0 1 2 3 4 5 6 7 8 Compression (dB)
Output Power @ 25 versus compression and frequenc y C
9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz
50 45 40 35 PAE (%) 30 25 20 15 10 5 0 -1 0 1 2 3 4 5 6 7 8 Compression (dB)
PAE @ 25 versus compression and frequency C
9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz
Ref. : DSCHA70127235 - 23 Aug 07
5/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
3 2.9 2.8 2.7 2.6 Ic (A) 2.5 2.4 2.3 2.2 2.1 2 -1 0 1 2 3
X-band High Power Amplifier
9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz
4
5
6
7
8
Compression (dB)
Collector current @ 25 versus compression and fr equency C
Temperatures: -40C; 20C; +80C Vc=7.5V
Pulse= 100 s Duty cycle 20%
3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
Vctrl TTL Input Voltage
+80 C 20 C 20 C +80 C -40 C -40 C
Ic (A)
TI/Vctrl (V) Collector quiescent current versus TI & Vctrl and temperature
1
2
3
4
5
6
Temperatures: -40C; 20C;+80C Vc=7.5V
Ref. : DSCHA70127235 - 23 Aug 07 6/10
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Pulse= 100 s Duty cycle 20%
Specifications subject to change without notice
X-band High Power Amplifier
40 35 30
ICTRL (mA)
CHA7012
25 20 15 10 5 0 0 1 2 3 4 5 6
+80C +20C -40C
Collector current control versus control voltage & temperature VCTRL (V)
Collector current control versus control voltage and temperature
Temperatures: -40C; 20C; +80C Vc=7.5V
1.2
Pulse=100 s Duty cycle20%
TTL input current versus TTL voltage and temperature
1
0.8
I TTL (mA)
0.6
+80C +80C +20C +20C -40C -40C
0.4
0.2
0 0 1 2 3
V TTL( V)
4
5
6
TTL input current versus TTL voltage and temperature
Ref. : DSCHA70127235 - 23 Aug 07
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
X-band High Power Amplifier
Chip Mechanical Data and Pin references
234
5
6
7
8 9 10
11
22 21 20
19 18
17
16 15 14
13
Chip thickness = 100m +/- 10 m RF pads (1, 12) = 96 x 196m DC pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 96m DC pads (7, 17) = 192 x 96m DC pads (11, 13) = 288 x 96m Pin number 1 8, 16 5, 9, 15, 19 2, 22 4, 20 6, 10, 14, 18 3, 7, 11, 13, 17, 21 12 Pin name IN Vctrl TI TO GND V,Vc1,Vc2 OUT Description Input RF NC Collector current control voltage TTL input TTL output Ground (NC) Power supply voltage Output RF
Ref. : DSCHA70127235 - 23 Aug 07
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Bonding recommendations
CHA7012
For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table:
Port IN (1) OUT (12)
DC pads to 1st decoupling level for double bonding DC pads to 1st decoupling level for single bonding 1st decoupling level to 2nd decoupling level for double bonding st 1 decoupling level to 2nd decoupling level for single bonding
Connection Inductance (Lbonding) = 0.3nH 400 m length with wire diameter of 25 m Inductance (Lbonding) = 0.3nH 400 m length with wire diameter of 25 m Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 m Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 m Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 m Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 m
Assembly recommendations in test fixture (using TTL circuits)
TI
Vc
*
*
TI
100pF
IN
OUT
Non capacitive pad 10nF
1F
TI
*
Vc
100 F
*
* Performances obtained with the same accesses connected to the same supply Note : Supply feed should be capacitively by-passed. 25m diameter gold wire is to be prefered.
Ref. : DSCHA70127235 - 23 Aug 07
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
X-band High Power Amplifier
Assembly recommendations in test fixture (using analog biasing circuits)
Vc
Vctrl
IN
OUT
100pF 10nF
1F
Vctrl
100 F
Vc
Note : Supply feed should be capacitively by-passed. 25m diameter gold wire is to be prefered.
Ordering Information
Chip form: CHA7012-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA70127235 - 23 Aug 07
10/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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