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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1200 35 70 70 V A A A TC=25C, Transistor Ptot 280 W VGES +/- 20V V IF 35 A IFRM 70 A VR = 0V, t p = 10ms, T Vj = 125C 2 It 400 A2 s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 35A, V GE = 15V, Tvj = 25C IC = 35A, V GE = 15V, Tvj = 125C IC = 1,2mA, V CE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 0,35 - C f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 2 - nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25C VCE = 1200V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C Cres ICES - 0,13 2 200 - 80 400 nF A A nA IGES - prepared by: Mark Munzer approved by: M. Hierholzer date of publication: 9.9.1999 revision: 2 1(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 35A, V CC = 600V VGE = 15V, R G = 22, Tvj = 25C VGE = 15V, R G = 22, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 35A, V CC = 600V VGE = 15V, R G = 22, Tvj = 25C VGE = 15V, R G = 22, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 35A, V CC = 600V VGE = 15V, R G = 22, Tvj = 25C VGE = 15V, R G = 22, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 35A, V CC = 600V VGE = 15V, R G = 22, Tvj = 25C VGE = 15V, R G = 22, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C IC = 35A, V CC = 600V, V GE = 15V RG = 22, Tvj = 125C, LS = 120nH IC = 35A, V CC = 600V, V GE = 15V RG = 22, Tvj = 125C, LS =120nH tP 10sec, V GE 15V, R G = 22 TVj125C, V CC=900V, V CEmax=VCES -LsCE *dI/dt ISC LsCE 320 60 A nH Eoff 4,3 mWs Eon 4,5 mWs tf 0,03 0,07 s s td,off 0,25 0,3 s s tr 0,05 0,05 s s td,on 0,05 0,06 s s min. typ. max. RCC`+EE` - 8,0 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 35A, V GE = 0V, Tvj = 25C IF = 35A, V GE = 0V, Tvj = 125C IF = 35A, - di F/dt = 900A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 35A, - di F/dt = 900A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 35A, - di F/dt = 900A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Erec 1,3 2,8 mWs mWs Qr 3,6 7,6 As As IRM 36 45 A A VF min. - typ. 1,8 1,7 max. 2,3 2,2 V V 2(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthCK RthJC - typ. 0,02 max. 0,44 0,8 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight M1 3 AL2O3 225 6 Nm M2 Nm G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 70 60 Tj = 25C Tj = 125C 50 IC [A] 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 70 IC = f (VCE) T vj = 125C 60 VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V 50 IC [A] 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 70 60 Tj = 25C Tj = 125C 50 IC [A] 40 30 20 10 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 70 IF = f (VF) 60 Tj = 25C Tj = 125C 50 IF [A] 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =22 , VCE = 600V, T j = 125C 12 Eoff 10 Eon Erec 8 E [mJ] 6 4 2 0 0 10 20 30 40 50 60 70 IC [A] Schaltverluste (typisch) Switching losses (typical) 24 Eoff Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 35A , VCE = 600V , T j = 125C 20 Eon Erec 16 E [mJ] 12 8 4 0 0 30 60 90 120 150 180 210 RG [] 6(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 10 1 ZthJC [K / W] 0,1 Zth:Diode Zth:IGBT 0,01 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 85,88 0,009 47,398 0,003 2 289,11 0,045 348,913 0,022 3 22,94 0,073 310,298 0,064 4 42,06 0,229 93,392 0,344 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 80 70 60 50 40 30 20 10 0 0 200 400 600 800 VGE = 15V, R g = 22 Ohm, T vj= 125C IC [A] IC,Modul IC,Chip 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GD120DLC E3224 8(8) Seriendatenblatt_BSM35GD120DLC-E3224.xls |
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