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AEGIS
SEMICONDUTORES LTDA.
A5A:5500.XX
VOLTAGE RATINGS
Part Number VRRM , VR - (V) rep. peak reverse voltage C TJ = 0 to 180 O A5A:5500.14 A5A:5500.16 A5A:5500.18 A5A:5500.20 A5A:5500.22 1400 1600 1800 2000 2200 Max. VRSM , VR - (V) Max. nonrep. peak reverse voltage TJ = 25 to 180 O C 1500 1700 1900 2100 2300
TJ = -40 to 0 O C 1400 1600 1800 2000 2200
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 5500 100 8650 59.4 IFSM Max. Peak non-rep. surge current 63.5 kA 70.6 75.5 15413 16800 I2t Max. I2t capability 21835 23800 It
2 1/2 2 kA s
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms Initial TJ = 180 OC, no voltage applied after surge.
2
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 180OC, rated VRRM applied after surge.
O
Initial TJ = 180 C, no voltage applied after surge.
Initial TJ = 180OC, rated VRRM applied after surge.
Max. I t
2 1/2
capability
260000 4550
kA2s1/2 N.m
Initial TJ = 180OC, no voltage applied after surge. for time tx = I t
2 1/2
It
*
1/2 tx .
(0.1 < tx < 10ms). -
F Mounting Force
AEGIS
SEMICONDUTORES LTDA.
A5A:5500.XX
CHARACTERISTICS
PARAMETER VFM peak on-state voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------------TYP. ----------200 --------1590(55.3) TO-200AE MAX. 1.71 0.831 1.023 0.057 0.064 0.011 0.012 0.012 0.006 --O
UNITS V V mW mA
O O O
TEST CONDITIONS Initial TJ = 25 C, 50-60Hz half sine, I eak = 17270A. p TJ = 180OC Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)] , 180 Half Sine. Use low values for ITM < p rated IT(AV) TJ = 180OC, Rated VRRM
2
C/W DC operation, double side cooled. C/W 180O sine wave, double side coolde. C/W 120O rectangular wave, double side cooled. C/W Mtg. Surface smooth, flat and greased. Double side cooled. -----
O
g(oz.) JEDEC
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature
180
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 90 80 70 0 1000 2000 3000 4000 5000
*Sinusoidal waveform 30 60 90 120 180
170 160 150 140 130 120 110
30
100
60
90
90
80 70 0 1000 2000 3000 4000
120 180 DC
6000
5000
6000
7000
8000
Average Forward Current (A)
*Rectangular waveform
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:5500.XX
Maximum Average Forward Power Loss
30
60000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
70000 60000 50000 40000 30000 20000 10000 0
*Sinusoidal waveform 60
50000
40000
60
30000
90
90 120 180
20000
120 180
10000
DC
0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000
*Rectangular waveform
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics
Fig. 4 - Average Forward Power Loss Characteristics
100000
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
10000
0.01
1000
1E-3
100
1E-4
125C
10 0.0 0.5
25C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1E-5 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance ZthJC Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:5500.XX TO-200AE
Fig. 7 - Outline Characteristics

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