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AEGIS
SEMICONDUTORES LTDA.
A1A:400.XX
VOLTAGE RATINGS
Part Number A1A:400.18 A1A:400.20 A1A:400.22 A1A:400.24 A1A:400.26 A1A:400.28 A1A:400.30 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180OC 1800 2000 2200 2400 2600 2800 3000 TJ = -40 to 0OC 1800 2000 2200 2400 2600 2800 3000 VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180OC 1900 2100 2300 2500 2700 2900 3100
This datasheet applies to: Metric thread: A1A:400.XX, A1B:400.XX Inch thread: A2A:400.XX, A2B:400.XX
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 400 125 800 8.56 IFSM Max. Peak non-rep. surge current 9.33 kA 10.18 11.10 303 331 I2t Max. I2t capability 429 468 It
2 1/2
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms
O Initial T J = 180 C, rated VRRM applied after surge. O
C C C
A
O
IF(RMS) Nom. RMS current
A
O Initial T J = 180 C, no voltage applied after surge.
O Initial T J = 180 C, rated VRRM applied after surge.
kA2s
t = 8.3 ms t = 10ms
O Initial T J = 180 C, no voltage applied after surge.
Max. I t
2 1/2
capability
3800 60(~534)
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
AEGIS
SEMICONDUTORES LTDA.
A1A:400.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------TYP. ----------------MAX. UNITS 1.45 0.97 0.30 45.00 0.11 0.12 0.13 0.010 V V mW mA
O O O O O
TEST CONDITIONS Initial T J = 25 C, sinusoidal wave, Ipeak = 1257A. TJ = 180 C, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM
O
C/W DC operation C/W 180 Osine wave C/W 120 O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O
----500(17.5) DO-205AD (DO-13)
g(oz.) JEDEC
180
Maximum Allowable Case Temperature
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
170 160 150 140
30
170 160 150 140 130 120 110 100
180 30 60 90 120
130 120 110 100 0 50 100 150 200 250
60
90 120 180
90 80 70
*Rectangular waveform DC
300
350
400
450
500
550
0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:400.XX
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
30
3500
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
4000 3500 3000 2500
3000 2500 2000 1500 1000 500 0 0
*Rectangular waveform
60
60
2000
90
90 120 180 DC
1500 1000 500 0
*Sinusoidal waveform
120 180
0
200
400
600
800
200
400
600
800
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
1
Transient Thermal Impedance ZthJC
1000
Transient Thermal Impedance ZthJC (C/W)
1.5 2.0 2.5 3.0
Instantaneous Forward Current (A)
0.1
100
0.01
180
25C
10 1.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:400.XX
DO-205AD (DO-13)
SW43
M24 x 1.5 (3/4" - 16UNF - 2A)
Fig. 7 - Outline Characteristics

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