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| IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features * Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up Protected up to 0.5A * High Peak Output Current: 4A Peak * Wide Operating Range: 4.5V to 35V * High Capacitive Load Drive Capability: 1800pF in <15ns * Matched Rise And Fall Times * Low Propagation Delay Time * Low Output Impedance * Low Supply Current * Two Drivers in Single Chip General Description The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates CMOS power supply cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. The IXDN404 is configured as a dual non-inverting gate driver, the IXDI404 is a dual inverting gate driver, and the IXDF404 is a dual inverting + non-inverting gate driver. The IXDN404/IXDI404/IXDF404 family are available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced thermal performance, the SOP-8 and SOP-16 are also available in a package with an exposed grounded metal back as the SI and SI-16 repectively. Applications * * * * * * * * * * Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers Limiting di/dt Under Short Circuit Ordering Information Part Number IXDN404PI IXDN404SI IXDN404SIA IXDN404SI-16 IXDN404SIA-16 IXDI404PI IXDI404SI IXDI404SIA IXDI404SI-16 IXDI404SIA-16 IXDF404PI IXDF404SI IXDF404SIA IXDF404SI-16 IXDF404SIA-16 Package Type 8-Pin PDIP 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back 16-Pin SOIC 8-Pin PDIP 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back 16-Pin SOIC 8-Pin PDIP 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back 16-Pin SOIC Temp. Range -55C to +125C Configuration Dual Non Inverting -55C to +125C Dual Inverting -55C to +125C Inverting + Non Inverting NOTE: Mounting or solder tabs on all packages are connected to ground Copyright (c) IXYS CORPORATION 2004 DS99018B(08/04) First Release IXDN404 / IXDI404 / IXDF404 Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram Vcc IN A ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N IN B ANTI-CROSS CONDUCTION CIRCUIT * P OUT B N GND Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram Vcc IN A ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N IN B ANTI-CROSS CONDUCTION CIRCUIT * P OUT B N GND Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram Vcc IN A ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N IN B ANTI-CROSS CONDUCTION CIRCUIT * P OUT B N * Patent Pending GND 2 IXDN404 / IXDI404 / IXDF404 Absolute Maximum Ratings (Note 1) Parameter Supply Voltage All Other Pins Junction Temperature Storage Temperature Value 40V -0.3V to VCC + 0.3V 150oC -65oC to 150oC 300oC Operating Ratings Parameter Operating Temperature Range -55 oC to 125 oC Value Soldering Lead Temperature (10 seconds maximum) Thermal Resistance (Junction to Case) (JC) 8 Pin SOIC (SI) 10 K/W 16 Pin SOIC (SI-16) 10 K/W Electrical Characteristics Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF tONDLY tOFFDLY VCC ICC Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output High Output resistance @ Output Low Peak output current Continuous output current Rise time Fall time On-time propagation delay Off-time propagation delay Power supply voltage Power supply current VCC = 18V VCC = 18V VCC = 18V 0V VIN VCC Thermal Resistance (To Ambient) 8 Pin PDIP (PI) (JA) 120 K/W 8 Pin SOIC (SIA) 110 K/W 110 K/W 16 Pin SOIC (SIA-16) (JA) JA with heat sink ** Heat sink area of 1 cm2 8 Pin SOIC 95 K/W 16 Pin SOIC-CT 95 K/W 2 Heat sink area of 3 cm 8 Pin SOIC 85 K/W 16 Pin SOIC-CT 85 K/W ** Device soldered to metal back pane. Heat sink area is 1 oz. copper on 1 side of 0.06" thick FR4 PC board. Unless otherwise noted, TA = 25 oC, 4.5V VCC 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel. Test Conditions 4.5V VCC 18V 4.5V VCC 18V Min 2.5 Typ Max 0.8 Units V V V A V -5 -10 VCC - 0.025 VCC + 0.3 10 0.025 2 1.5 4 1 CL=1800pF Vcc=18V CL=1800pF Vcc=18V CL=1800pF Vcc=18V CL=1800pF Vcc=18V 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 16 13 36 35 18 1 0 18 17 40 39 35 3 10 10 2.5 2 V A A ns ns ns ns V mA A A Specifications Subject To Change Without Notice Note 1: Operating the device beyond parameters with listed "Absolute Maximum Ratings" may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 3 IXDN404 / IXDI404 / IXDF404 Electrical Characteristics Unless otherwise noted, temperature over -55oC to 150oC, 4.5V VCC 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel. Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF tONDLY tOFFDLY VCC ICC Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output High Output resistance @ Output Low Peak output current Continuous output current Rise time Fall time On-time propagation delay Off-time propagation delay Power supply voltage Power supply current Test Conditions 4.5V VCC 18V 4.5V VCC 18V Min 2.4 Typ Max 0.8 Units V V V A V -5 0V VIN VCC -10 VCC - 0.025 VCC + 0.3 10 0.025 VCC = 18V VCC = 18V VCC = 18V 3.2 1 CL=1000pF Vcc=18V CL=1000pF Vcc=18V CL=1000pF Vcc=18V CL=1000pF Vcc=18V 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 18 1 0 11 13 60 59 35 3 10 10 3.4 2 V A A ns ns ns ns V mA A A Specifications Subject To Change Without Notice 4 IXDN404 / IXDI404 / IXDF404 Pin Description SYMBOL IN A GND IN B OUT B VCC OUT A FUNCTION A Channel Input Ground B Channel Input B Channel Output Supply Voltage A Channel Output DESCRIPTION A Channel Input signal-TTL or CMOS compatible. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. B Channel Input signal-TTL or CMOS compatible. B Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 35V. A Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Figure 4 - Characteristics Test Diagram Vcc 10uF 25V 4 1 NC 2 In A 3 Gnd In B NC 8 7 Out A Vcc 6 Out B 5 Agilent 1147A Current Probe 1800 pF Agilent 1147A Current Probe 1800 pF 5 IXDN404 / IXDI404 / IXDF404 Typical Performance Characteristics Fig. 5 80 Rise Times vs. Supply Voltage Fig. 6 80 Fall Times vs. Supply Voltage 70 70 60 60 Rise Time (ns) 50 Fall Times (ns) 50 40 40 10000pF 10000pF 6800pF 30 30 6800pF 20 20 4700pF 1800pF 1000pF 200pF 10 4700pF 1800pF 1000pF 200pF 10 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 Supply Voltage (V) Fig. 7 80 70 60 8V Supply Voltage (V) Output Rise Tim vs. Load Capacitance es Fig. 8 80 Output Fall Tim vs. Load Capacitance es 8V 70 60 10V 10V 12V 18V 25V 35V Rise Time (ns) 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 Fall Time (ns) 12V 18V 25V 35V 50 40 30 20 10 0 10000 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Load Capacitance (pF) Fig. 9 14 Load Capacitance (pF) Fig. 10 2.5 2.4 Rise And Fall Times vs. Temperature C L = 1000pF, V cc = 18V M ax / M in Input vs. Temperature C L = 1000pF, V cc = 18V 12 10 tF Max / Min Input Voltage tR 2.3 2.2 M in Input High Time (ns) 8 2.1 2 Max Input Low 6 1.9 1.8 1.7 4 2 1.6 0 -60 -10 40 90 140 190 1.5 -60 -10 40 90 140 190 Temperature (C) Tem perature (C) 6 IXDN404 / IXDI404 / IXDF404 Fig. 11 100 90 80 Supply Current vs. Load Capacitance Vcc = 8V 2 MHz Fig. 12 1000 Supply Current vs. Frequency Vcc = 8V 10000 pF 6800 pF 4700 pF 1800 pF 1000 pF 200 pF 100 1 MHz 70 60 50 40 30 20 10 0 100 Supply Current (ma) Supply Current (mA) 10 500 kHz 1 0.1 100 kHz 50 kHz 10H kHz 0.01 1 10 100 1000 10000 1000 10000 Load Capacitance (pF) Fig. 13 100 90 80 70 60 500 kHz 2 MHz 1 Mhz Frequency (kHz) Fig. 14 1000 Supply Current vs. Load Capacitance Vcc = 12V Supply Current vs. Frequency Vcc = 12V 10000 pF 6800 pF 4700 pF 1800 pF 1000 pF 200 pF 100 Supply Current (ma) Supply Current (mA) 10 50 40 30 20 10 0 100 100 kHz 50 kHz 10 kHz 1 0.1 0.01 1 10 100 1000 10000 1000 10000 Load Capacitance (pF) Fig. 15 100 90 80 70 60 50 40 30 20 10 0 100 100 kHz 50 kHz 10 kHz 0.01 1 10 Frequency (kHz) Fig. 16 1000 Supply Current vs. Load Capacitance Vcc = 18V 2 MHz Supply Current vs. Frequency Vcc = 18V 10000 pF 6800 pF 4700 pF 1800 pF 1000 pF 200 pF 1 MHz 500 kHz 100 Supply Current (ma) Supply Current (mA) 10 1 0.1 1000 10000 100 1000 10000 Load Capacitance (pF) Frequency (kHz) 7 IXDN404 / IXDI404 / IXDF404 Fig. 17 100 90 80 Supply Current vs. Load Capacitance Vcc = 35V Fig. 18 1000 Supply Current vs. Frequency Vcc = 35V 10000 pF 6800 pF 4700 pF 100 2 MHz 1 MHz 500 kHz 1800 pF 1000 pF 200 pF Supply Current (mA) 70 60 50 40 30 20 10 0 100 Supply Current (mA) 10 1 100 kHz 50 kHz 0.1 10 kHz 0.01 1 10 100 1000 10000 1000 10000 Load Capacitance (pF) Fig. 19 70 Frequency (kHz) Fig. 20 50 Propagation Delay vs. Supply Voltage CL = 1800pF Vin = 5V@1kHz Propagation Delay vs. Input Voltage CL = 1800pF Vcc = 15V 60 45 Propagation Delay (ns) Propagation Delay (ns) tONDLY 40 tOFFDLY 35 50 tONDLY 40 tOFFDLY 30 30 20 10 25 0 5 10 15 20 25 30 35 20 2 4 6 8 10 12 Supply Voltage (V) Fig. 21 Propagation Delay Times vs. Temperature Fig. 22 0 .3 Input Voltage (V) C L = 1000pF, Vcc = 18V 60 55 50 45 Q u ie s c e n t S u p p ly C u rre n t v s . T e m p e ra tu re V cc = 1 8 V , V in = 5 V @ 1 kH z , C L = 1 0 0 0 p F Quiescent Vcc input Current (mA) 0 .2 5 0 .2 Time (ns) tONDLY 40 35 30 25 20 -60 -10 40 90 140 190 0 .1 5 tOFFDLY 0 .1 0 .0 5 0 -6 0 -1 0 Temperature (C) 8 T e m p e ra tu re (C ) 40 90 140 190 IXDN404 / IXDI404 / IXDF404 Fig. 23 6 High State Ouput Resistance vs. Supply Voltage Fig. 24 6 Low State Output Resistance vs. Supply Voltage High State Output Resistance (Ohms) 5 Low State Output Resistance (Ohms) 5 10 15 20 25 30 35 5 4 4 3 3 2 2 1 1 0 0 5 10 15 20 25 30 35 Supply Voltage (V) Fig. 25 0 Supply Voltage (V) Fig. 26 12 Vcc vs. P Channel Output Current Vcc vs. N Channel Ouput Current -2 N Channel Output Current (A) 5 10 15 20 25 30 35 P Channel Output Current (A) 10 -4 8 -6 6 -8 4 -10 2 -12 0 5 10 15 20 25 30 35 Vcc (V) Fig. 27 6 Vcc (V) Fig. 28 6 P Channel Output Current vs. Temperature Vcc = 18V, CL = 1000pF N Channel Output Current vs. Temperature Vcc = 18V CL = 1000pF P Channel Output Current (A) 5 N Channel Output Current (A) -80 -30 20 70 120 170 5 4 4 3 3 2 2 1 1 0 0 Temperature (C) -80 -30 20 70 120 170 Temperature (C) 9 IXDN404 / IXDI404 / IXDF404 PIN CONFIGURATIONS 1 2 3 4 NC IN A GND INB NC OUT A 8 7 1 2 3 4 NC IN A GND INB NC OUT A 8 7 1 2 3 4 NC IN A GND INB NC OUT A 8 7 VS 6 OUT B 5 VS 6 OUT B 5 VS 6 OUT B 5 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDN404 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDI404 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDF404 1 NC 2 IN A 3 NC 4 GND 5 GND 6 NC 7 IN B 8 NC NC 16 OUT A 15 OUT A 14 VCC 13 VCC 12 OUT B 11 OUT B 10 NC 9 1 NC 2 IN A 3 NC 4 GND 5 GND 6 NC 7 IN B 8 NC NC 16 OUT A 15 OUT A 14 VCC 13 VCC 12 OUT B 11 OUT B 10 NC 9 1 NC 2 IN A 3 NC 4 GND 5 GND 6 NC 7 IN B 8 NC NC 16 OUT A 15 OUT A 14 VCC 13 VCC 12 OUT B 11 OUT B 10 NC 9 16 Pin SOIC IXDN404SI-16 16 Pin SOIC IXDI404SI-16 16 Pin SOIC IXDF404SI-16 Supply Bypassing, Grounding Practices And Output Lead inductance When designing a circuit to drive a high speed MOSFET utilizing the IXDN404/IXDI404/IXDF404, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, the IXDN404 is being used to charge a 2500pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= V C / t, where V=25V C=2500pF & t=25ns, one can determine that to charge 2500pF to 25 volts in 25ns will take a constant current of 2.5A. (In reality, the charging current won't be constant and will peak somewhere around 4A). SUPPLY BYPASSING In order for the design to turn the load on properly, the IXDN404 must be able to draw this 2.5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN404 to an absolute minimum. 10 GROUNDING In order for the design to turn the load off properly, the IXDN404 must be able to drain this 2.5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN404 and its load. Path #2 is between the IXDN404 and its power supply. Path #3 is between the IXDN404 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN404. OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and its load as short and wide as possible. If the driver must be placed farther than 2" (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminal of the load. IXDN404 / IXDI404 / IXDF404 Dimenional Outline: IXDD404PI Dimenional Outlines: IXDD404SI-CT and IXDD404SIA Dimenional Outlines: IXDD404SI-16CT and IXDD404SIA-16 IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: sales@ixys.net IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: marcom@ixys.de 11 |
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