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| DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-600-1D ABDB-600-1D 6 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION ACTUAL SIZE DT DB602 VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SERIES DB600 - DB610 and ADB604 - ADB608 BH | SURGE OVERLOAD RATING TO 250 AMPS PEAK RoHS COMPLIANT MECHANICAL DATA Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.13 Ounces (3.6 Grams) SYM BL BH D1 LL LD MILLIMETERS MIN 14.7 5.8 10.3 19.0 1.0 MAX 15.7 6.9 11.3 n/a 1.1 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 5 G $%2 $! 94 ' #(c)A F 8 ! $ (c)&! (c) 4 (c)(c)( ! D (c)(c) 8(c)( &(c) D (c)8 8(c) D (c) ! $ 9 C(c)(c)@ (c) (c)! '8(c) 76 5 ! 3 (c)! "1! &0 (c)) & ! '&! % (c) (c)#! (c)(c)! (c) (c)(c) 2 " 2$(E 54 ' ! 2%4 $( ! BA 9! )" | 4 2 $! ( % $ $!" | Series Number t Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V X V W Vs VY Pn It y & / Thermal Energy (Rating for Fusing) t < 8.3mSec Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). Tc = 60 C Average Forward Rectified Current, T = 60 C (Note 2) Junction Operating and Storage Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 6 Amps DC Typical Junction Capacitance (Note 4) x 6 P I H AMPS SEC IQ CT 6 Maximum Reverse Current at Rated Vw @ T = 25 C @T = 125 C I E25 e d Q z~Qt ~ t~Qr 8{ ~ { sz z{zy~|u 6z~ t sQ~zux z~{ u8 w ~z{ u { v uQ~{ 6u wr t w uzuzvuuzz z8zzx z { zut w ~ w z{ t z u z~~zz z ~~} ~t zu uz~~~yu wx u6{ ~Qz~ m | v {y r | r vu w w v | s r | r v t v v } {}| s { t w w}{ { vu {}p t sQru zzz8z~ t sQ~ r {y r x| ot x v { p { (c) z{ ~ { $z w{ suzv u 8zz 8r 6x Q| ~ r z{ u{ zy ~u~ m v v x p A1/4 A A A (c) 1/2 (c) $$z z m~ ~ z8| zzz $z3/4 6~u zzz3/4zz3/4 1/2Qz~z1/2Q1/4 z Q~$ * uz%z z8| 8 x u~Q$Q8z{ t uQ$8zz wx @qup m rq | v { t z~u| wz u $~ ~6 uz~~ ~ o m~ z } o o ~6 Q~ z8Q8z{ t uQ$8zz wx @qup m s s p (c) w t | r x | r { y v z{ ~z v zt ~}z z~6Qvur { z uz8~ w| ~zQ$$zzzz wx u6z{ t ~$~uQ~iz~ z6 z~} |Qr sw z ~ z~(R) ~ ~z(c)z| z| zz~ ~6Q8zz wx uQt uqup o nl6@if v | t { w v y t|r x| {y vu | { {u x| r r s v{ t w wt {} |r {y vu sr m kj h g vt %u Typical Thermal Resistance, Junction to Case (Note 2) Rs Minimum Insulation Breakdown Voltage (Circuit to Case) V 8q r S @ VR y W Ui@e 88b@a W U p V hgf dc Y X V PI H GF Q686E VD See Note 5 2 0 1 C B@864 A 975 V3 See Note 5 ) ' ( %$!" &# T , T y Iu AMPS C VOLTS pF mA VOLTS C/W u 1 au7o u o Continuous Power Dissipation in V @ T =80 C (Heat Sink Temp) Region m Region for 100 mS Square Wave UT &S R Pl 1 (R) a qf h rpi g Vf OO &N I aI1E II aaI 11ta1Aaaja1wa{aa EEE CAEA AAA A3/4 1/21/4 * ed Vd aa7 &aa1ara1aa}~1a{a1wa1tr1o ||z yxv sus qp yijygydyyyyywwywu k hf e xv aa1aaw1aa7aa1wa1~a1 (c) || o o o eqi a n i yyw1w#i a e oe c a i &xae iii ae ye ae aaaa a yyw1w# Y &&Uq#qxyO UUU OUOO O PARAMETER (TEST CONDITIONS) SYMBOL (c) _ + UL RECOGNIZED - FILE #E124962 LL LD D1 INCHES MIN 0.58 0.23 0.405 0.75 0.039 MAX 0.62 0.27 0.445 n/a 0.042 + D1 _ BL BL RATINGS UNITS b ca VOLTS WATTS DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-600-2D ABDB-600-2D 6 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608 65 4 9.0 Average Forward Current, Io (Amperes) 6.0 4.5 0 0 50 100 150 Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE I IuI Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 100 Instantaneous Forward Current Amperes Instantaneous Reverse Current, I (Microamperes) 100 10 1.0 NOTE 3 0.1 1.0 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE (c) Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE NOTES NOTE 4 (1) Case Temperature, T With Bridge Mounted on 4"Sq. x 0.11" Thick (10.5cm Sq. x 0.3cm) Aluminum Plate (2) T = 150 C (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p 50 - 400V 600 - 1000V !! (c) (c) Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE E26 E E C uAE A A A A O%zOQuOuI xO OON aa a a Y%UU U U y 6 0.1 && (c)% $ |# iec a e ie eaea uno/o uyuuo u oonn i o Qunaei " Q P 1.5 GG (c)F 3.0 98 (c)7 NOTE 1 BA (c)@ Case, Tc 32 2 11 0 ED (c)C 7.5 Peak Forward Surge Current (Amperes) 60Hz Resistive or Inductive Loads )( ' NOTE 2 I H S R E IuE (c) | |
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