View D1LNK60Z_4158086.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z
N-CHANNEL 600V - 13 - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESHTM Power MOSFET
General features
Type STD1LNK60Z-1 STQ1NK60ZR STN1NK60Z

VDSS 600V 600V 600V
RDS(on) <15 <15 <15
ID 0.8A 0.3A 0.3A
Pw 25W 3W 3.3W TO-92 (Ammopak) TO-92
100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability New high voltage benchmark
2
1
2
3
2 1
3
SOT-223
IPAK
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application
Order codes
Sales Type STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP STN1NK60Z Marking D1LNK60Z Q1NK60ZR Q1NK60ZR 1NK60Z Package IPAK TO-92 TO-92 SOT-223 Packaging TUBE BULK AMMOPAK TAPE & REEL
February 2006
Rev 7
1/14
www.st.com 14
Electrical ratings
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Value Parameter IPAK Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20K) Gate-Source Voltage Drain Current (continuous) at T C = 25C Drain Current (continuous) at T C=100C Drain Current (pulsed) Total Dissipation at T C = 25C Derating Factor 0.8 0.5 3.2 25 0.24 3 0.25 800 4.5 -55 to 150 TO-92 600 600 30 0.3 0.189 1.2 3.3 0.26 0.3 SOT-223 V V V A A A W W/C V V/ns C Unit
PTOT
VESD(G-D) dv/dt(2) TJ Tstg
Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature
1. Pulse width limited by safe operating area 2. ISD 0.3A, di/dt 200A/s, VDD =80%V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-a Rthj-lead Tl
Thermal resistance
Value Parameter IPAK Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance junction-lead Max Maximum lead temperature for soldering purpose 5 100 -275 TO-92 -120 40 260 SOT-223 -37.87(1) -C/W C/W C/W C Unit
1. When mounted on 1 inch FR-4 board, 2 Oz Cu
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche Curent, Repetitive or Noy-Repetitive (pulse width limited by Tj Max) Single pulse avalanche Energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 0.8 60 Unit A mJ
2/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS
On/off states
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Test Condictions ID = 1mA, VGS= 0 VDS = Max Rating, VDS = MaxRating @125C Min. 600 1 50
10
Typ.
Max.
Unit V A A A V
IGSS VGS(th) RDS(on)
Gate Body Leakage Current VGS = 20V (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance VDS= V GS, ID = 50A VGS= 10V, ID= 0.4A 3 3.75 13
4..5 15
Table 5.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Condictions VDS =15V, ID = 0.4A Min. Typ. 0.5 94 17.6 2.8 11 4.9 1 2.7 6.9 Max. Unit S pF pF pF pF nC nC nC
VDS =25V, f=1 MHz, V GS=0
Coss eq(2). Equivalent Output Capacitance Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VGS=0, V DS =0V to 480V VDD=480V, ID = 0.8A VGS =10V (see Figure 11)
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS inceases from 0 to 80% VDSS
Rev 7
3/14
Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Condictions VDD =300 V, ID= 0.4A, RG=4.7, VGS=10V (see Figure 19) Min. Typ. 5.5 5 13 28 Max. Unit ns ns ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=0.8A, VGS=0 ISD=0.8A, di/dt = 100A/s, VDD =20V, Tj=25C ISD=0.8A, di/dt = 100A/s, VDD =20V, Tj=150C 135 216 3.2 140 224 3.2 Test Condictions Min Typ. Max 0.8 2.4 1.6 Unit A A V ns nC A ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 8.
Symbol BVGSO(1)
1.
Gate-source zener diode
Parameter Gate-source Braekdown Voltage Test Condictions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
4/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Electrical characteristics
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for IPAK Figure 2. Thermal impedance for IPAK
Figure 3.
Safe operating area for TO-92
Figure 4.
Thermal impedance for TO-92
Figure 5.
Safe operating area for SOT-223
Figure 6.
Thermal impedance for SOT-223
Rev 7
5/14
Electrical characteristics Figure 7. Output characterisics
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 8. Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
6/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 13. Normalized gate threshold voltage vs temperature
Electrical characteristics Figure 14. Normalized on resistance vs temperature
Figure 15. Source-drain diode forward characteristics
Figure 16. Normalized BVDSS vs temperature
Figure 17. Maximum avalanche energy vs temperature
Figure 18. Max Id Current vs Tc
Rev 7
7/14
Test circuit
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
3
Test circuit
Figure 20. Gate charge test circuit
Figure 19. Switching times test circuit for resistive load
Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
8/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Rev 7
9/14
Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
TO-92 MECHANICAL DATA
mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch
10/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
Rev 7
11/14
Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
SOT-223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
12/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Revision history
5
Revision history
Table 9.
Date 19-Mar-2003 15-May-2003 09-Jun-2003 17-Nov-2004 15-Feb-2005 07-Sep-2005 22-Feb-2006
Revision history
Revision 1 2 3 4 5 6 7 First Release Removed DPAK Final datasheet Inserted SOT-223 Modified Figure 3. Inserted ecopak indication New template Changes
Rev 7
13/14
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
(c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
14/14
Rev 7

▲Up To Search▲

Price & Availability of D1LNK60Z

	To Download D1LNK60Z Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .