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C4245 BUZ16 RXXP12D BUL62A MICON TA1286A PFZ180A 14014
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  Datasheet File OCR Text:
 PROCESS
Programmable Unijunction Transistor
CP622
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Cathode Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 14,930 PRINCIPAL DEVICE TYPES 2N6027 PLANAR PASSIVATED 27.5 x 27.5 MILS 11 MILS 7.1 x 5.1 MILS 7.1 x 5.1 MILS Al - 30,000A Au - 13,000A
BACKSIDE GATE
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R3 (4- February 2004)
Central
TM
PROCESS
CP622
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R3 (4- February 2004)


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