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NTE2077 Integrated Circuit 6-Stage Darlington Transistor Array w/Clamp Diode Description: The NTE2077is a six-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. Features: * * * * * * High breakdown voltage (BVCEO 40V) High-current driving (IC(max) = 150mA) With clamping diodes Driving available with PMOS IC output of 8V to 18V Wide input voltage range (VI = -40V to +40V) Wide operating temperature range (TA = -20 to +75C) Absolute Maximum Ratings: (TA = -20 to +75C unless otherwise specified) Collector-Emitter Voltage (Output, H), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +40V Collector Current, IC (Current per Circuit Output, L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Input Voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V to 40V Clamp Diode Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Clamp Diode Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Power Dissipation (TA = +25C, when mounted on board), PD . . . . . . . . . . . . . . . . . . . . . . . . . . 1.47W Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20 to +75C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Recommended Operational Conditions: (TA = -20 to +75C, unless otherwise specified) Parameter Output Voltage Collector Current per Channel "H" Input Voltage "L" Input Voltage Symbol VO IC VIH VIL Percent Duty Cycle Less than 50% Test Conditions Min 0 0 7 0 Typ - - - - Max 40 150 35 1 Unit V mA V V Electrical Characteristics: (TA = -20 to +75C, unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Input Current Input Reverse Current Clamping Diode Forward Voltage Clamping Diode Reverse Current DC Amplification Factor Symbol VCE(sat) () Il IIR VF IR hFE Test Conditions VI = 7V, IC = 150mA VI = 7V, IC = 100mA VI = 18V VI = 35V VI = -35V IF = -150mA VR = 40V VCE = 4V, IC = 150mA, TA = +25C Min 40 - - - - - - - 800 Typ - 1.1 1.0 0.9 1.9 - 1.15 - 2500 Max Unit - 1.7 1.4 1.8 5.0 -20 1.6 100 - V V V mA mA A V A Collector-Emitter Breakdown Voltage V(BR)CEO ICER = 100A Switching Characteristics: (TA = +25 unless otherwise specified) Parameter Turn-On Time Turn-Off Time Symbol ton toff Pin Connection Diagram Input 1 Input 2 Input 3 Input 4 Input 5 Input 6 GND Test Conditions CL = 15pF (Note 1) Min - - Typ 35 300 Max - - Unit ns ns Note 1. Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10s, tr = 6ns, ZO = 50, VP = 7Vp-p 1 2 3 4 5 6 7 14 Output 1 13 Output 2 12 Output 3 11 Output 4 10 Output 5 9 8 Output 6 Common 14 8 1 .785 (19.95) Max 7 .300 (7.62) .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min |
Price & Availability of NTE2077 |
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