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| BL FEATURES GALAXY ELECTRICAL ERB32-01 --- ERB32-02 VOLTAGE RANGE: 100 --- 200 V CURRENT: 1.2 A HIGH EFFICIENCY RECTIFIER Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 15 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERB32 - 01 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 ERB32 - 02 200 140 200 1.2 UNITS V V V A VRRM VRMS VDC IF(AV) 100 70 100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 50.0 A Maximum instantaneous forw ard voltage @ 1.2A Maximum reverse current @TA =25 VF IR t rr CJ RJA TJ TSTG 0.92 5.0 50.0 50 50 50 - 55 ----- + 150 - 55 ----- + 150 V A ns pF /W at rated DC blocking voltage @TA=100 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance (Note1) (Note2) (Note3) Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0262019 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES ERB32-01 -- ERB32-02 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. +0.5A t rr D .T. .U (+) 25VD C (approx) (-) (+) PU LSE G ER R EN ATO (N TE O 2) 0 -0.25A 1 N NIN ODC U TIVE O ILLO CO SC S PE (N TE1) O (-) -1.0A 1cm NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1M.22pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50. SET TIME BASE FOR 20/30 ns/cm FIG.2 --FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT. FIG.3--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 1.4 1.2 1 0.8 Single Phase Half Wave 60Hz Resistive or Inductive Load 200 100 60 40 20 10 4 TJ=25 AMPERES 0.6 0.4 0.2 0 2 1 0.1 0.2 0 20 40 60 80 100 120 140 150 0.4 1 2 4 10 20 40 100 AMBIENT TEMPERATURE. REVERSE VOLTAGE,VOLTS 80 70 60 TJ=125 8.3ms Single Half Sine-Wave INSTANTANEOUS FORWARD CURRENT FIG.4--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. FIG.5 -- TYPICAL FORWARD CHARACTERISTIC 10 1.0 AMPERES 50 40 30 20 10 0 1 2 4 8 10 20 40 60 80 100 AMPERES 0.1 TJ=25 Pulse Width=300S 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.galaxycn.com Document Number 0262019 BLGALAXY ELECTRICAL 2. |
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