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FGH80N60FD 600V, 80A Field Stop IGBT
December 2007
FGH80N60FD
600V, 80A Field Stop IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.8V @ IC = 40A * High input impedance * Fast switching * RoHS complaint
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential.
Applications
* Induction Heating Application
E
C G
C
COLLECTOR (FLANGE)
G E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 25C @ TC = 100C
Ratings
600 20 80 40 160 290 116 -55 to +150 -55 to +150 300
Units
V V A A A W W C C C
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
--
Max.
0.43 1.5
Units
C/W C/W C/W
--
40
(c)2007 Fairchild Semiconductor Corporation
1
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FGH80N60FD Rev. A
FGH80N60FD 600V, 80A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGH80N60FD
Device
FGH80N60FDTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 ----
-0.6 ---
--250 400
V V/C uA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125C 4.5 --5.5 1.8 2.05 7.0 2.4 -V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2110 200 60 ---pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 400 V, IC = 40A, VGE = 15V VCC = 400 V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 400 V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 25C -----------------21 56 126 50 1 0.52 1.52 20 54 131 70 1.1 0.78 1.88 120 14 58 ---100 1.5 0.78 2.28 ----------ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
2 FGH80N60FD Rev. A
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FGH80N60FD 600V, 80A Field Stop IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 20A
Test Conditions
TC = 25C TC = 125C TC = 25C IES =20A, dIES/dt = 200A/s TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C
Min.
-
Typ.
2.3 1.7 36 105 2.6 7.8 46.8 409
Max
2.8 -
Units
V
Diode Reverse Recovery Time
ns
Diode Reverse Recovery Current
ns
Diode Reverse Recovery Charge
nC
3 FGH80N60FD Rev. A
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FGH80N60FD 600V, 80A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
TC = 25 C 20V 12V
o
Figure 2. Typical Saturation Voltage Characteristics
160
TC = 125 C 20V 12V 10V
o
15V
15V
Collector Current, IC [A]
120
10V
Collector Current, IC [A]
120
80
80
40
VGE = 8V
40
VGE = 8V
0
0
2 4 6 8 Collector-Emitter Voltage, VCE [V]
10
0
0
2 4 6 8 Collector-Emitter Voltage, VCE [V]
10
Figure 3. Typical Saturation Voltage Characteritics
160
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
160
Common Emitter VCE = 20V TC = 25 C
o
Collector Current, IC [A]
Collector Current, IC [A]
120
TC = 25 C TC = 125 C
o
o
120
TC = 125 C
o
80
80
40
40
0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6
0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5
Collector-Emitter Voltage, VCE [V]
3.0
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter TC = 25 C
o
80A
16
2.5
12
2.0
40A
8
40A
1.5
20A Common Emitter VGE = 15V
4
IC = 20A
80A
1.0 25 50 75 100
o
0
125
4
Case Temperature, TC [ C]
8 12 16 Gate-Emitter Voltage, VGE [V]
20
4 FGH80N60FD Rev. A
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FGH80N60FD 600V, 80A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter TC = 125 C
o
(Continued)
Figure 8. Capacitance Characteristics
5000
Common Emitter VGE = 0V, f = 1MHz
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
4000
Ciss
TC = 25 C
o
12
3000
Coss
8
40A
2000
4
IC = 20A
80A
1000
Crss
0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 0.1
1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteeristics
400
Gate-Emitter Voltage, VGE [V]
TC = 25 C
100
Collector Current, Ic [A]
200V 300V
10s 100s
12
Vcc = 100V
10
1ms
9
6
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
10 ms DC
3
0.1
0 0 50 100 Gate Charge, Qg [nC] 150
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
Figure 11. Turn-Off Switching SOA Characteristics
200
Figure 12. Turn-On Characteristics vs. Gate Resistance
200
100
100
Collector Current, IC [A]
Switching Time [ns]
tr
10
td(on)
10
Safe Operating Area VGE = 20V, TC = 100 C
o
Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o
1 1
5
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
5 FGH80N60FD Rev. A
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FGH80N60FD 600V, 80A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-Off Characteristics vs. Gate Resistance
2000 Common Emitter
(Continued)
Figure 14. Turn-On Characteristics vs. Collector Current
200
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
1000
VCC = 400V, VGE = 15V IC = 40A TC = 25 C
o
100
td(off)
tr
Switching Time [ns]
TC = 125 C
o
100
tf
Switching Time [ns]
td(on)
10 0 10 20 30 40 50
Gate Resistance, RG []
10 20
40
60
80
Collector Current, IC [A]
Figure 15. Turn-Off Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 16. Switching Loss vs Gate Resistance
5
Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o
Switching Time [ns]
td(off)
Switching Loss [mJ]
TC = 125 C
Eon Eoff
100
tf
1
20 20
40
60
80
0.3 0
10
Collector Current, IC [A]
20 30 40 Gate Resistance, RG []
50
Figure 17. Switching Loss vs Collector Current
10
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Eon
Switching Loss [mJ]
TC = 125 C
1
Eoff
0.1 20
40
60
80
Collector Current, IC [A]
6 FGH80N60FD Rev. A
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FGH80N60FD 600V, 80A Field Stop IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 single pulse
0.01
PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 19. Typical Forward Voltage Drop
100
Figure 20. Stored Charge
600
Stored Recovery Charge , Qrr [nC]
Forward Current , IF [A]
500 400 300 200 100 0 100
25 C
o
10
TC = 125 C TC = 25 C
o
o
TC = 75 C
o
125 C
o
1
0.1 0 1 2 3 Forward Voltage , VF [V] 4
200
di/dt ,[A/s]
300
400
Figure 21. Reverse Recovery Time
140 120 100 80 60 40 20 100 5
25 C
o
Figure 22. Reverse Recovery Current
20
Reverse Recovery Current, Irr [A]
Reverse Recovery Time, trr [ns]
15
125 C
o
10
125 C
o
5
25 C
o
200
di/dt, [A/s]
300
400
0 5 100
200
di/dt, [A/s]
300
400
7 FGH80N60FD Rev. A
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FGH80N60FD 600V, 80A Field Stop IGBT
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
8 FGH80N60FD Rev. A
www.fairchildsemi.com
FGH80N60FD 600V, 80A Field Stop IGBT
tm
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor and is not intended to be an exhaustive list of all such trademarks. Green FPSTM e-SeriesTM ACEx(R) Power-SPMTM GOTTM PowerTrench(R) Build it NowTM i-LoTM CorePLUSTM Programmable Active DroopTM IntelliMAXTM CROSSVOLTTM QFET(R) ISOPLANARTM CTLTM QSTM MegaBuckTM Current Transfer LogicTM QT OptoelectronicsTM MICROCOUPLERTM EcoSPARK(R) Quiet SeriesTM MicroPakTM RapidConfigureTM FACT Quiet SeriesTM Motion-SPMTM SMART STARTTM FACT(R) OPTOLOGIC(R) SPM(R) FAST(R) FastvCoreTM OPTOPLANAR(R) STEALTHTM FPSTM SuperFETTM PDP-SPMTM FRFET(R) SuperSOTTM-3 Power220(R) SuperSOTTM-6 Global Power ResourseSM Power247(R) SuperSOTTM-8 Green FPSTM POEWEREDGE(R) owns or is authorized to use SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I28
No Identification Needed
Full Production
Obsolete
Not In Production
9 FGH80N60FD Rev. A
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