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| FDMS8660AS N-Channel PowerTrench(R) SyncFETTM October 2007 FDMS8660AS N-Channel PowerTrench SyncFET 30V, 49A, 2.1m Features Max rDS(on) = 2.1m at VGS = 10V, ID = 28A Max rDS(on) = 3.1m at VGS = 4.5V, ID = 22A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant (R) TM General Description tm The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S D S G 5 6 7 8 4 3 2 1 G S S S D D D D D D Power 56 (Bottom view) D MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 2) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 30 20 49 179 28 200 726 104 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 C/W Package Marking and Ordering Information Device Marking FDMS8660AS Device FDMS8660AS Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000units (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 1 www.fairchildsemi.com FDMS8660AS N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 10mA, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 27 500 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 10mA, referenced to 25C VGS = 10V, ID = 28A VGS = 4.5V, ID = 22A VGS = 10V, ID = 28A, TJ = 125C VDD = 10V, ID = 28A 1.0 1.7 -5 1.7 2.3 2.3 167 2.1 3.1 3.1 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 4410 2305 185 1.2 5865 3065 280 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V, ID = 28A VDD = 15V, ID = 28A, VGS = 10V, RGEN = 6 16 8 42 5 59 30 12 5.2 29 16 68 10 83 42 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS =2A (Note 3) 0.4 46 67 0.7 74 108 V ns nC IF = 28A, di/dt = 300A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. b. 125C/W when mounted on a minimum pad of 2 oz copper. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Starting TJ = 25C, L = 3mH, IAS = 22A, VDD = 30V, VGS = 10V. 3. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 2 www.fairchildsemi.com FDMS8660AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 200 VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 3.5V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 160 ID, DRAIN CURRENT (A) 2.5 VGS = 3.5V 120 80 40 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 4.0V VGS = 3.0V 2.0 1.5 VGS = 4.0V VGS = 4.5V 1.0 VGS = 10V 0 0.0 0.5 0 40 80 120 160 200 ID, DRAIN CURRENT(A) 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 8 SOURCE ON-RESISTANCE (m) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 28A VGS = 10V ID = 28A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 6 rDS(on), DRAIN TO 4 TJ = 125oC 2 TJ = 25oC 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 175 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 200 100 VGS = 0V 140 ID, DRAIN CURRENT (A) VDS = 5V 10 1 0.1 TJ = 125oC TJ = 25oC 105 70 TJ = 25oC TJ = -55oC 35 TJ = 125oC TJ = -55oC 0.01 0 1.0 1.5 2.0 2.5 3.0 3.5 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 3 www.fairchildsemi.com FDMS8660AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 28A 10000 8 6 4 2 f = 1MHz VGS = 0V CAPACITANCE (pF) VDD = 10V VDD = 15V VDD = 20V Ciss 1000 Coss Crss 0 0 10 20 30 40 50 60 Qg, GATE CHARGE(nC) 100 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 180 ID, DRAIN CURRENT (A) 40 IAS, AVALANCHE CURRENT(A) 150 120 VGS = 10V 10 TJ = 25oC 90 Limited by Package VGS = 4.5V TJ = 125oC 60 30 RJC = 1.2 C/W o 1 0.01 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 300 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 1ms 100 ID, DRAIN CURRENT (A) VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 10 THIS AREA IS LIMITED BY rDS(on) 10ms 1000 100ms 100 1 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC 1s 10s DC 10 0.01 0.01 0.1 1 10 100 1 0.5 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 4 www.fairchildsemi.com FDMS8660AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 t2 SINGLE PULSE RJA = 125 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.0001 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 5 www.fairchildsemi.com FDMS8660AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8660AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 4 3 2 CURRENT (A) IDSS, REVERSE LEAKAGE CURRENT (A) 5 0.1 TJ = 125oC 0.01 1 0 -1 -2 -3 -4 -20 0 20 40 TIME (ns) 60 80 100 120 0.001 TJ = 100oC 0.0001 TJ = 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS8660AS SyncFET Body Diode Reverse Recovery Characteristics Figure 15. SyncFET Body Diode Reverse Leakage vs Drain to Source Voltage (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 6 www.fairchildsemi.com FDMS8660AS N-Channel PowerTrench(R) SyncFETTM www.fairchildsemi.com (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C 7 FDMS8660AS N-Channel PowerTrench(R) SyncFETTM TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation FDMS8660AS Rev.C www.fairchildsemi.com |
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