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| TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(MACH -MOSIV) TK13H90A1 Swiching Regulator Applications Low drain-source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.78 (typ.) : |Yfs| = 11S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 720V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 13 39 150 491 13 15 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA 2-16K1A Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 3.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C / W C / W 1 2 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 5.3 mH, RG = 25 , IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2006-11-13 TK13H90A1 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min -- 30 -- 900 2.0 -- 5.0 -- -- -- Typ. -- -- -- -- -- 0.78 11 2790 25 300 53 Max 10 -- 100 -- 4.0 0.95 -- -- -- -- -- pF Unit A V A V V S ID=6.5 -- Turn-on time Switching time Fall time 50 tf RL=62 -- 88 -- ns -- 43 -- VDD=400V Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A -- -- -- -- 165 45 32 13 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 1400 24 Max 13 39 -1.7 -- -- Unit A A V ns C Marking TOSHIBA TK13H90A1 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 TK13H90A1 ID - VDS 10 Common source Tc = 25C Pulse test 8 10 6 5.0 6 4.8 4 4.6 2 4.4 4.2 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 20 5.5 16 10 ID - VDS 8 6 5.5 Common source Tc = 25C Pulse test 8 (A) ID ID Drain current (A) 12 Drain current 8 5.0 4.8 4 4.6 VGS = 4.2 V 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 VDS - VGS 20 16 VDS (V) Common source VDS = 20 V Pulse test Common source Tc = 25C Pulse test 16 ID (A) 12 Drain-source voltage 12 ID = 13 A 8 6.5 4 3.3 Drain current 8 100 4 25 Tc = -55C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 100 Common source VDS = 20 V Pulse test Tc = -55C 10 25 100 10 Common source Tc = 25C Pulse test RDS (ON) - ID Yfs Forward transfer admittance Drain-source ON resistance RDS (ON) () 1 VGS = 10 ,15 V 1 0.1 0.1 1 10 100 0.1 1 0.1 10 100 Drain current ID (A) Drain current ID (A) 3 2006-11-13 TK13H90A1 RDS (ON) - Tc 2 IDR - VDS 100 Common source Tc = 25C Pulse test Drain-source ON resistance RDS (ON) () 1.6 ID = 13 A 1.2 6.5 3.3 0.8 IDR Drain reverse current (A) 10 1 Common source VGS = 10 V Pulse test 10 5 3 0.1 0 0.2 0.4 1 0.6 VGS = 0 V 0.8 1.0 1.2 1.4 0.4 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) C - VDS 10000 Ciss 4 Vth - Tc Vth (V) Gate threshold voltage (pF) 3 1000 Capacitance C Coss 100 Common source VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10 2 1 Crss 100 0 -80 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 500 Dynamic input/output characteristics VDS (V) Common source ID = 13 A Tc = 25C Pulse test 20 (W) PD 400 VDS Drain power dissipation Drain-source voltage 100 400V 200 VGS 100 4 8 50 0 0 40 80 120 160 200 0 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-13 Gate-source voltage 300 VDD = 100 V 200V 12 VGS 150 16 (V) TK13H90A1 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 100 1 10 100 1 10 0.1 0.01 0.001 10 Pulse width tw (s) Safe operating area 100 600 ID max (Pulse) * EAS - Tch 100 s * EAS (mJ) Avalanche energy 500 ID max (Continuous) 10 1 ms * 400 (A) 300 ID Drain current 1 DC operation Tc = 25C 200 100 0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves linearly 0.01 must with be derated in VDSS max 10 100 1000 increase 50 75 100 125 150 Channel temperature (initial) Tch (C) temperature. 1 15 V -15 V BVDSS IAR VDD Test circuit Wave form VDS Drain-source voltage VDS (V) RG = 25 VDD = 90 V, L = 5.3 mH AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-13 TK13H90A1 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13 |
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