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T150N 3257P 2SC5406 SLG46127 16580 V907E X2P1360 X2P1360
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 SEMiX 453GB12T4s
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R)3s Trench IGBT Modules
SEMiX 453GB12T4s SEMiX 453GAL12T4s SEMiX 453GAR12T4s Target Data Inverse Diode
Module
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GB
GAL
GAR
1
27-09-2007 SCT
(c) by SEMIKRON
SEMiX 453GB12T4s
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMiX(R)3s Trench IGBT Modules
Module SEMiX 453GB12T4s SEMiX 453GAL12T4s SEMiX 453GAR12T4s Target Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
GAL
GAR
2
27-09-2007 SCT
(c) by SEMIKRON
SEMiX 453GB12T4s
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
27-09-2007 SCT
(c) by SEMIKRON
SEMiX 453GB12T4s
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
27-09-2007 SCT
(c) by SEMIKRON
SEMiX 453GB12T4s
5
27-09-2007 SCT
(c) by SEMIKRON


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