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 HMC-SDD112
v00.0907
GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz
Features
Low Insertion Loss: 2 dB High Isolation: 30 dB DC Blocked RF I/Os Integrated DC Bias Circuitry Die Size: 2.01 x 0.975 x 0.1 mm
Typical Applications
This HMC-SDD112 is ideal for: * FCC E-Band Communication Systems * Short-Haul / High Capacity Radios
SWITCH - CHIP
* Automotive Radar * Test & Measurement Equipment * SATCOM * Sensors
Functional Diagram
General Description
The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Double Throw (SPDT) MMIC Switch which exhibits low insertion loss and high isolation. This all-shunt MMIC SPDT features on-chip DC blocks and DC bias voltage decoupling circuitry. All bond pads and the die backside are Ti/ Au metallized and the PIN diode devices are fully passivated for reliable operation. The HMC-SDD112 GaAs PIN SPDT is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifi cations*, TA = +25 C, with -5/+5V Control, 50 Ohm System
Parameter Frequency Range Insertion Loss Isolation Return Loss ON State Current (+5 V) ON State Current (-5 V) OFF State * Unless otherwise indicated, all measurements are from probed die 25 Min. Typ. 55 - 86 2 30 12 22 -63 3 Max. Units GHz dB dB dB mA nA
0-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-SDD112
v00.0907
GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz
"On" Insertion Loss vs. Freq. CTLA= -5V, CTLB= 5V for RFOUT1 to be ON "Off" Isolation vs. Freq. CTLA= +5V, CTLB= -5V for RFOUT1 to be OFF
"On" Input Return Loss vs. Freq. CTLA= -5V, CTLB= 5V for RFOUT1 to be ON
"On" Output Return Loss vs. Freq. CTLA= -5V, CTLB= 5V for RFOUT1 to be ON
Note 1: Measured Performance Characteristics (Typical Performance at 25C) Test data is taken with probes on RFIN and RFOUT1 with RFOUT2 left open.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
0-3
SWITCH - CHIP
HMC-SDD112
v00.0907
GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz
Absolute Maximum Ratings
Bias Voltage Range Storage Temperature Operating Temperature Bias Current (ON State) -5.5 to 5.5 Vdc -65 to +150 C -55 to +85 C 30 mA
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
SWITCH - CHIP
Control Voltages
State Low High Bias Condition -5 V @ 63 nA typical +5 V @ 22 mA typical
Truth Table
Control Input CTLA Low (-5V) High (+5V) CTLB High (+5V) Low (-5V) Signal Path State RFIN to RFOUT1 On Off RFIN to RFOUT2 Off On
Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002"
0-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com


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