View IRF7707PBF_4128993.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD-96024
IRF7707PBF
HEXFET(R) Power MOSFET
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free
VDSS
-20V
RDS(on) max
22m@VGS = -4.5V 33m@VGS = -2.5V
ID
-7.0A -6.0A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
1 2 3 4 1= 2= 3= 4= D S S G
D
8 7
G
6
S
8= 7= 6= 5= D S S D
5
with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -7.0 -5.7 -28 1.5 1.0 0.01 12 -55 to +150
Units
V A W W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
83
Units
C/W
www.irf.com
1
01/04/06
IRF7707PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -20 --- --- -0.45 15 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.012 14.3 18.9 --- --- --- --- --- --- 31 6.4 10 11 54 134 138 2361 512 323
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 22 VGS = -4.5V, ID = -7.0A m 33 VGS = -2.5V, ID = -6.0A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.0A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 47 ID = -7.0A --- nC VDS = -16V --- VGS = -4.5V 17 VDD = -10V 81 ID = -1.0A ns 201 RG = 6.0 207 VGS = -4.5V --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 142 147 -1.5 A -28 -1.2 213 221 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, I F = -1.5A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10sec.
Pulse width 300s; duty cycle 2%.
2
www.irf.com
IRF7707PBF
100
100
VGS -7.5V -4.5V -3.5V -3.0V -2.5V -2.0V -1.75V BOTTOM -1.5V TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
10
VGS -7.5V -4.5V -3.5V -3.0V -2.5V -2.0V -1.75V BOTTOM -1.5V TOP
-1.5V
1
1
-1.5V
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -7.0A
-I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
10
1.0
TJ = 25 C
0.5
1 1.0
V DS= -15V 20s PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 4.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF7707PBF
3500
2800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = -7.0A
V DS=-16V
8
C, Capacitance (pF)
Ciss
2100
6
1400
4
700
Coss Crss
2
0 1 10 100
0
0
10
20
30
40
50
60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
10
-ID , Drain Current (A) I
100us 10
TJ = 25 C
1
1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF7707PBF
8.0
VDS VGS
RD
-ID , Drain Current (A)
6.0
4.0
V GS
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on) tr t d(off) tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100
PDM
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
+
-
RG
D.U.T. V DD
5
IRF7707PBF
( , RDS(on) Drain-to -Source On Resistance)
0.120
RDS ( on ) , Drain-to-Source On Resistance ) (
0.200
0.150
0.080
0.100
0.040
VGS = -2.5V 0.050 VGS = -4.5V
ID = -7.0A
0.000 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.000 0 10 20 30 40 50 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS VG
QGD
VGS
-3mA
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com
+
10 V
D.U.T.
-
VDS
IRF7707PBF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
ddd CAB
6 BOTH SIDES 2X E/2 6
S Y M B O L A A1 A2 b c D
MO-153AA DIMENSIONS
MILLIMET ERS MAX MIN NOM ----1.20 0.05 0.80 0.19 0.09 2.90 --1.00 ----3.00 0.15 1.05 0.30 0.20 3.10 INCHES NOM ----.039 ----.118
MIN --.0020 .032 .0075 .0036 .115
MAX .0472 .0059 .041 .0118 .0078 .122
E1
E
INDEX MARK
E E1 e L L1 0 aaa
6.40 BS C 4.30 4.40 4.50 0.45 0 0.65 BS C 0.60 0.75 0.25 BS C --0.10 0.10 0.05 0.20 8
.251 BSC .170 .173 .177 .0256 .0178 0 .0236 .010 BSC --.0039 .0039 .0019 .0078 .0290 8
e
B
5
3X
bbb ccc ddd
ccc e/2 A 8X b C bbb A1 8X c A2
4
H
CAB L1 0
aaa C 8 SURF
7
8X L
LEAD AS S IGNMENT S NOTES 1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994. D S S G 1 2 3 4 S INGLE DIE 8 7 6 5 D S S D D1 S1 S1 G1 1 2 3 4 DUAL DIE 8 7 6 5 D2 S2 S2 G2 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES . 3. CONTROLLING DIMENS ION: MILLIMETER. 4 DAT UM PLANE H IS LOCATED AS S HOWN. 5 DAT UM A AND B TO BE DETERMINED AT DATUM PLANE H. 6 DIMENS IONS D AND E1 ARE MEAS URE D AT DATUM PLANE H. 7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING TO A S UBS TRAT E. 8. OUTLINE CONFORMS TO JEDEC OUT LINE M0-153AA.
www.irf.com
7
IRF7707PBF
TSSOP8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
PART NUMBER
7702 XXXXX
DAT E CODE (YWW)
LOT CODE P (optional) = "Lead-Free"
YWW?P
AS S EMBLY S IT E CODE
TSSOP-8 Tape and Reel Information
16 mm
O 13"
16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONF ORMS T O EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06
8
www.irf.com

▲Up To Search▲

Price & Availability of IRF7707PBF

	To Download IRF7707PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .